ATE369409T1 - Fluorhaltige tenside für wässrige säureätzlösungen - Google Patents
Fluorhaltige tenside für wässrige säureätzlösungenInfo
- Publication number
- ATE369409T1 ATE369409T1 AT03770349T AT03770349T ATE369409T1 AT E369409 T1 ATE369409 T1 AT E369409T1 AT 03770349 T AT03770349 T AT 03770349T AT 03770349 T AT03770349 T AT 03770349T AT E369409 T1 ATE369409 T1 AT E369409T1
- Authority
- AT
- Austria
- Prior art keywords
- fluorine
- aqueous acid
- acid etching
- containing surfactants
- etching solutions
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/290,763 US6890452B2 (en) | 2002-11-08 | 2002-11-08 | Fluorinated surfactants for aqueous acid etch solutions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE369409T1 true ATE369409T1 (de) | 2007-08-15 |
Family
ID=32296841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03770349T ATE369409T1 (de) | 2002-11-08 | 2003-09-17 | Fluorhaltige tenside für wässrige säureätzlösungen |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6890452B2 (de) |
| EP (1) | EP1558698B1 (de) |
| JP (1) | JP4481830B2 (de) |
| KR (1) | KR101003931B1 (de) |
| CN (1) | CN1324111C (de) |
| AT (1) | ATE369409T1 (de) |
| AU (1) | AU2003278831A1 (de) |
| DE (1) | DE60315499T2 (de) |
| WO (1) | WO2004044092A1 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| WO2005045895A2 (en) * | 2003-10-28 | 2005-05-19 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
| SG114747A1 (en) * | 2004-02-25 | 2005-09-28 | Mitsubishi Gas Chemical Co | Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure |
| US7294610B2 (en) | 2004-03-03 | 2007-11-13 | 3M Innovative Properties Company | Fluorinated sulfonamide surfactants for aqueous cleaning solutions |
| MX2007011161A (es) * | 2005-03-14 | 2007-11-13 | 3M Innovative Properties Co | Compuestos polimericos biocompatibles para formulaciones medicinales. |
| US20070129273A1 (en) * | 2005-12-07 | 2007-06-07 | Clark Philip G | In situ fluoride ion-generating compositions and uses thereof |
| US7572848B2 (en) * | 2005-12-21 | 2009-08-11 | 3M Innovative Properties Company | Coatable composition |
| US7425374B2 (en) * | 2005-12-22 | 2008-09-16 | 3M Innovative Properties Company | Fluorinated surfactants |
| SG133443A1 (en) * | 2005-12-27 | 2007-07-30 | 3M Innovative Properties Co | Etchant formulations and uses thereof |
| US7629298B2 (en) * | 2006-02-21 | 2009-12-08 | 3M Innovative Properties Company | Sandstone having a modified wettability and a method for modifying the surface energy of sandstone |
| US7824755B2 (en) * | 2006-06-29 | 2010-11-02 | 3M Innovative Properties Company | Fluorinated leveling agents |
| US7569715B2 (en) * | 2006-07-05 | 2009-08-04 | 3M Innovative Properties Company | Compositions containing silanes |
| US7964553B2 (en) * | 2006-09-01 | 2011-06-21 | E. I. Dupont de Nmeours and Company | Production processes and systems, compositions, surfactants, monomer units, metal complexes, phosphate esters, glycols, aqueous film forming foams and foam stabilizers |
| US20080119002A1 (en) * | 2006-11-17 | 2008-05-22 | Charles Grosjean | Substrate contact for a MEMS device |
| US7651830B2 (en) * | 2007-06-01 | 2010-01-26 | 3M Innovative Properties Company | Patterned photoacid etching and articles therefrom |
| US8153019B2 (en) * | 2007-08-06 | 2012-04-10 | Micron Technology, Inc. | Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices |
| US8987032B2 (en) | 2009-03-03 | 2015-03-24 | Akrion Systems, Llc | Method for selective under-etching of porous silicon |
| CN101931030B (zh) * | 2010-07-14 | 2012-06-20 | 江苏韩华太阳能电池及应用工程技术研究中心有限公司 | 纳米改性高效率低成本多晶硅太阳能电池制备工艺 |
| CN101958367B (zh) * | 2010-07-14 | 2012-06-13 | 江苏韩华太阳能电池及应用工程技术研究中心有限公司 | 单晶硅太阳能电池表面微区可控修饰工艺 |
| CN103080273A (zh) * | 2010-09-01 | 2013-05-01 | 巴斯夫欧洲公司 | 含水酸性溶液和蚀刻溶液以及使单晶和多晶硅衬底表面织构化的方法 |
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| WO2012088216A2 (en) | 2010-12-21 | 2012-06-28 | 3M Innovative Properties Company | Method for treating hydrocarbon-bearing formations with fluorinated amine |
| EP2668248B1 (de) * | 2011-01-25 | 2019-02-27 | Basf Se | Verwendung von tensiden mit mindestens drei kurzkettigen perfluorierten gruppen zur herstellung integrierter schaltkreise mit mustern mit zeilenabstandsabmessungen unter 50 nm |
| WO2013022673A2 (en) | 2011-08-10 | 2013-02-14 | 3M Innovative Properties Company | Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions |
| CN102254814B (zh) * | 2011-08-16 | 2013-12-25 | 中国科学院电工研究所 | 一种氧化硅的选择性刻蚀溶液及其制备方法和应用 |
| WO2014070546A1 (en) * | 2012-10-31 | 2014-05-08 | Corning Incorporated | Foam etchant and methods for etching glass |
| JP6433730B2 (ja) * | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置の製造方法及び半導体製造装置 |
| EP3191532B1 (de) | 2014-09-11 | 2019-08-28 | 3M Innovative Properties Company | Fluoriertes tensid enthaltende zusammensetzungen |
| DE102014013591A1 (de) | 2014-09-13 | 2016-03-17 | Jörg Acker | Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität |
| CN107849493B (zh) | 2015-07-16 | 2020-10-09 | 巴斯夫欧洲公司 | 含有磺基酯的铵盐的减少缺陷用冲洗溶液 |
| US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
| CN108231999B (zh) * | 2017-12-29 | 2021-07-02 | 唐山国芯晶源电子有限公司 | 石英谐振器晶片的加工方法 |
| TW202035361A (zh) * | 2018-12-12 | 2020-10-01 | 美商3M新設資產公司 | 氟化胺氧化物界面活性劑 |
| CN114456094B (zh) * | 2020-11-10 | 2023-09-26 | 中国石油天然气股份有限公司 | 氟碳双子表面活性剂、助排剂及制备方法 |
| GB2603003A (en) * | 2021-01-25 | 2022-07-27 | Macdermid Inc | Method of etching a plastic component |
| CN121471115A (zh) * | 2024-08-05 | 2026-02-06 | 中国石油化工股份有限公司 | 一种表面活性剂及其制备方法和用途 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1037857A (en) | 1963-07-11 | 1966-08-03 | Pennsalt Chemicals Corp | Method and composition for cleaning resin coated substrates |
| US4055458A (en) * | 1975-08-07 | 1977-10-25 | Bayer Aktiengesellschaft | Etching glass with HF and fluorine-containing surfactant |
| DE2921142A1 (de) * | 1979-05-25 | 1980-12-11 | Bayer Ag | Verwendung von perfluoralkansulfonamid- salzen als tenside |
| DE3038985A1 (de) | 1980-10-15 | 1982-05-27 | Bayer Ag, 5090 Leverkusen | Verfahren zum saeurepolieren von glas |
| EP0073863B1 (de) | 1981-09-08 | 1985-07-03 | Dainippon Ink And Chemicals, Inc. | Fluor enthaltende Aminosulfonate |
| JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
| US4620934A (en) * | 1984-04-26 | 1986-11-04 | Allied Corporation | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
| JPS63283028A (ja) * | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
| US5350489A (en) * | 1990-10-19 | 1994-09-27 | Purex Co., Ltd. | Treatment method of cleaning surface of plastic molded item |
| US5085786A (en) * | 1991-01-24 | 1992-02-04 | Minnesota Mining And Manufacturing Company | Aqueous film-forming foamable solution useful as fire extinguishing concentrate |
| US5587513A (en) * | 1992-11-27 | 1996-12-24 | Pohmer; Klaus | Polyether-substituted imide compounds and their use |
| DE69418458T2 (de) * | 1993-02-04 | 2000-01-27 | Daikin Industries, Ltd. | Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften |
| US5658962A (en) * | 1994-05-20 | 1997-08-19 | Minnesota Mining And Manufacturing Company | Omega-hydrofluoroalkyl ethers, precursor carboxylic acids and derivatives thereof, and their preparation and application |
| US5803956A (en) * | 1994-07-28 | 1998-09-08 | Hashimoto Chemical Company, Ltd. | Surface treating composition for micro processing |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| JP3923097B2 (ja) * | 1995-03-06 | 2007-05-30 | 忠弘 大見 | 洗浄装置 |
| US5688884A (en) * | 1995-08-31 | 1997-11-18 | E. I. Du Pont De Nemours And Company | Polymerization process |
| AU2830997A (en) | 1996-06-06 | 1998-01-05 | Minnesota Mining And Manufacturing Company | Fire-fighting agents containing adsorbable fluorocarbon surfactants |
| US6348157B1 (en) * | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
| US6552090B1 (en) * | 1997-09-15 | 2003-04-22 | 3M Innovative Properties Company | Perfluoroalkyl haloalkyl ethers and compositions and applications thereof |
| US6807824B1 (en) * | 1999-04-27 | 2004-10-26 | Hiroshi Miwa | Glass etching composition and method for frosting using the same |
| US6600557B1 (en) * | 1999-05-21 | 2003-07-29 | Memc Electronic Materials, Inc. | Method for the detection of processing-induced defects in a silicon wafer |
| EP1246856B1 (de) | 1999-10-27 | 2009-07-15 | 3M Innovative Properties Company | Fluorochemische sulfonamide tenside |
| US6310018B1 (en) * | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
| US20020089044A1 (en) * | 2001-01-09 | 2002-07-11 | 3M Innovative Properties Company | Hermetic mems package with interlocking layers |
| JP2002256460A (ja) * | 2001-02-09 | 2002-09-11 | Nippon Parkerizing Co Ltd | アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法 |
| US20020142619A1 (en) * | 2001-03-30 | 2002-10-03 | Memc Electronic Materials, Inc. | Solution composition and process for etching silicon |
| US6555510B2 (en) * | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
| KR20040029380A (ko) * | 2001-07-25 | 2004-04-06 | 시바 스페셜티 케미칼스 홀딩 인크. | 퍼플루오로알킬 치환된 아민, 산, 아미노산 및 티오에테르산 |
| US6890452B2 (en) | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| US7169323B2 (en) | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
-
2002
- 2002-11-08 US US10/290,763 patent/US6890452B2/en not_active Expired - Lifetime
-
2003
- 2003-09-17 EP EP03770349A patent/EP1558698B1/de not_active Expired - Lifetime
- 2003-09-17 AT AT03770349T patent/ATE369409T1/de not_active IP Right Cessation
- 2003-09-17 AU AU2003278831A patent/AU2003278831A1/en not_active Abandoned
- 2003-09-17 WO PCT/US2003/029262 patent/WO2004044092A1/en not_active Ceased
- 2003-09-17 CN CNB038249278A patent/CN1324111C/zh not_active Expired - Fee Related
- 2003-09-17 DE DE60315499T patent/DE60315499T2/de not_active Expired - Lifetime
- 2003-09-17 JP JP2004551466A patent/JP4481830B2/ja not_active Expired - Fee Related
- 2003-09-17 KR KR1020057008094A patent/KR101003931B1/ko not_active Expired - Fee Related
-
2005
- 2005-03-16 US US11/081,196 patent/US7101492B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20050181620A1 (en) | 2005-08-18 |
| JP2006505668A (ja) | 2006-02-16 |
| DE60315499T2 (de) | 2008-04-30 |
| US6890452B2 (en) | 2005-05-10 |
| DE60315499D1 (de) | 2007-09-20 |
| US7101492B2 (en) | 2006-09-05 |
| WO2004044092A1 (en) | 2004-05-27 |
| EP1558698B1 (de) | 2007-08-08 |
| CN1324111C (zh) | 2007-07-04 |
| KR101003931B1 (ko) | 2010-12-30 |
| AU2003278831A1 (en) | 2004-06-03 |
| US20040094510A1 (en) | 2004-05-20 |
| EP1558698A1 (de) | 2005-08-03 |
| CN1694940A (zh) | 2005-11-09 |
| JP4481830B2 (ja) | 2010-06-16 |
| KR20050072796A (ko) | 2005-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE369409T1 (de) | Fluorhaltige tenside für wässrige säureätzlösungen | |
| TW200606248A (en) | Fluorinated sulfonamide surfactants for aqueous cleaning solutions | |
| DE60309738D1 (de) | Fluorhaltige tenside für gepufferte säureätzlösungen | |
| MY145605A (en) | Electrochemical etching | |
| TW200624998A (en) | Photomask-blank, photomask and fabrication method thereof | |
| CN103666478B (zh) | 一种非离子型低表面张力的酸性氟化铵蚀刻液 | |
| ATE420941T1 (de) | Chemische spülzusammensetzung | |
| TW200611970A (en) | Process solutions containing surfactants | |
| DE60308546D1 (de) | Wischtücher und deren verwendung | |
| MY135681A (en) | Method for manufacturing glass substrate of information recording medium | |
| TW200702341A (en) | Polymer, resist composition and patterning process | |
| ITMI20042553A1 (it) | Processo per la preparazione di dispersioni di fluoropolimeri | |
| EP1195803A3 (de) | Verfahren zur Reinigung nach einer Ätzung | |
| TW200709333A (en) | Method for fabricating semiconductor device | |
| DE602004011764D1 (de) | Nachgiebige scheibenwischersysteme | |
| TW200512462A (en) | Connection pin | |
| EP1271642A3 (de) | Methode zur Evaluierung der Abhängigkeit von Halbleitersubstrat-Eigenschaften von der Kristallorientierung und Halbleiter damit | |
| AU2002248614A1 (en) | Ruthenium silicide processing methods | |
| ATE350442T1 (de) | Flüssiges saures waschmittel | |
| DE60334929D1 (de) | Algainassb-ätzung | |
| DE602004022125D1 (de) | Hoch reine alkalische Ätzenlösung für Silizium-Wafern und alkalisches Ätzverfahren eines Silizium-Wafers | |
| CN102956416B (zh) | 一种硅微通道板的氧化方法 | |
| ATE492047T1 (de) | Verbinder und kontakt-wafer | |
| ATE515062T1 (de) | Herstellungsverfahren für seitenwand- abstandsstücke (spacers) in cmos bauelementen | |
| ATE320716T1 (de) | Waffel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |