ATE331298T1 - Verbesserte methode eine oxidschicht zu ätzen - Google Patents

Verbesserte methode eine oxidschicht zu ätzen

Info

Publication number
ATE331298T1
ATE331298T1 AT98963140T AT98963140T ATE331298T1 AT E331298 T1 ATE331298 T1 AT E331298T1 AT 98963140 T AT98963140 T AT 98963140T AT 98963140 T AT98963140 T AT 98963140T AT E331298 T1 ATE331298 T1 AT E331298T1
Authority
AT
Austria
Prior art keywords
etching
processing chamber
oxide layer
improved method
plasma processing
Prior art date
Application number
AT98963140T
Other languages
English (en)
Inventor
Giao Quynh Bui-Le
John Y Arima
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE331298T1 publication Critical patent/ATE331298T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Storage Of Fruits Or Vegetables (AREA)
AT98963140T 1997-12-22 1998-12-11 Verbesserte methode eine oxidschicht zu ätzen ATE331298T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/996,071 US6083844A (en) 1997-12-22 1997-12-22 Techniques for etching an oxide layer

Publications (1)

Publication Number Publication Date
ATE331298T1 true ATE331298T1 (de) 2006-07-15

Family

ID=25542474

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98963140T ATE331298T1 (de) 1997-12-22 1998-12-11 Verbesserte methode eine oxidschicht zu ätzen

Country Status (7)

Country Link
US (1) US6083844A (de)
EP (1) EP1042796B1 (de)
JP (1) JP4454148B2 (de)
AT (1) ATE331298T1 (de)
DE (1) DE69835032T2 (de)
TW (1) TW446757B (de)
WO (1) WO1999033097A1 (de)

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Also Published As

Publication number Publication date
DE69835032D1 (de) 2006-08-03
WO1999033097A1 (en) 1999-07-01
JP2001527288A (ja) 2001-12-25
EP1042796B1 (de) 2006-06-21
EP1042796A1 (de) 2000-10-11
DE69835032T2 (de) 2007-06-06
TW446757B (en) 2001-07-21
US6083844A (en) 2000-07-04
JP4454148B2 (ja) 2010-04-21

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