AU2003272331A1 - Fluorinated surfactants for buffered acid etch solutions - Google Patents

Fluorinated surfactants for buffered acid etch solutions

Info

Publication number
AU2003272331A1
AU2003272331A1 AU2003272331A AU2003272331A AU2003272331A1 AU 2003272331 A1 AU2003272331 A1 AU 2003272331A1 AU 2003272331 A AU2003272331 A AU 2003272331A AU 2003272331 A AU2003272331 A AU 2003272331A AU 2003272331 A1 AU2003272331 A1 AU 2003272331A1
Authority
AU
Australia
Prior art keywords
etch solutions
acid etch
fluorinated surfactants
buffered acid
solutions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003272331A
Other languages
English (en)
Inventor
Richard M. Flynn
Michael J. Parent
Patricia M. Savu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of AU2003272331A1 publication Critical patent/AU2003272331A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AU2003272331A 2002-11-08 2003-09-11 Fluorinated surfactants for buffered acid etch solutions Abandoned AU2003272331A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/290,765 US7169323B2 (en) 2002-11-08 2002-11-08 Fluorinated surfactants for buffered acid etch solutions
US10/290,765 2002-11-08
PCT/US2003/028606 WO2004044091A1 (en) 2002-11-08 2003-09-11 Fluorinated surfactants for buffered acid etch solutions

Publications (1)

Publication Number Publication Date
AU2003272331A1 true AU2003272331A1 (en) 2004-06-03

Family

ID=32229103

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003272331A Abandoned AU2003272331A1 (en) 2002-11-08 2003-09-11 Fluorinated surfactants for buffered acid etch solutions

Country Status (9)

Country Link
US (1) US7169323B2 (enExample)
EP (1) EP1558697B1 (enExample)
JP (1) JP4160562B2 (enExample)
KR (1) KR101036068B1 (enExample)
CN (1) CN1324110C (enExample)
AT (1) ATE345375T1 (enExample)
AU (1) AU2003272331A1 (enExample)
DE (1) DE60309738T2 (enExample)
WO (1) WO2004044091A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
JP4677890B2 (ja) * 2005-11-29 2011-04-27 信越半導体株式会社 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ
JP2008124135A (ja) * 2006-11-09 2008-05-29 Stella Chemifa Corp 微細加工処理剤、及びそれを用いた微細加工処理方法
EP2139030B1 (en) * 2007-04-13 2014-05-14 Daikin Industries, Ltd. Etching solution
KR101030057B1 (ko) * 2008-07-16 2011-04-22 (주) 이피웍스 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
US20100155657A1 (en) * 2008-12-23 2010-06-24 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
WO2010113744A1 (ja) * 2009-03-30 2010-10-07 東レ株式会社 導電膜除去剤および導電膜除去方法
US8030112B2 (en) * 2010-01-22 2011-10-04 Solid State System Co., Ltd. Method for fabricating MEMS device
JP6101693B2 (ja) * 2011-08-10 2017-03-22 スリーエム イノベイティブ プロパティズ カンパニー フォトレジスト洗浄溶液用のパーフルオロアルキルスルホンアミド界面活性剤
MY181266A (en) * 2012-12-14 2020-12-21 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
KR102171621B1 (ko) 2013-01-29 2020-10-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 계면활성제, 그의 제조 방법 및 사용 방법
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
JP6433730B2 (ja) * 2014-09-08 2018-12-05 東芝メモリ株式会社 半導体装置の製造方法及び半導体製造装置
KR102462889B1 (ko) 2014-09-11 2022-11-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제를 함유하는 조성물
CN104388091B (zh) * 2014-10-25 2016-06-01 江阴市化学试剂厂有限公司 缓冲氧化腐蚀液制备方法
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
KR102460326B1 (ko) * 2018-06-28 2022-10-31 오씨아이 주식회사 실리콘 기판 식각 용액
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑
CN111171965B (zh) * 2020-01-20 2021-07-20 安徽建筑大学 一种运行清洗多功能复合清洗液
CN112939804B (zh) * 2021-02-04 2022-11-15 济宁康德瑞化工科技有限公司 一种有机胺氧化物的制备方法
KR20240011661A (ko) 2021-05-20 2024-01-26 스텔라 케미파 코포레이션 미세 가공 처리제 및 미세 가공 처리 방법
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1037857A (en) 1963-07-11 1966-08-03 Pennsalt Chemicals Corp Method and composition for cleaning resin coated substrates
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
DE2921142A1 (de) * 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
DE3038985A1 (de) * 1980-10-15 1982-05-27 Bayer Ag, 5090 Leverkusen Verfahren zum saeurepolieren von glas
DE3171226D1 (en) 1981-09-08 1985-08-08 Dainippon Ink & Chemicals Fluorine-containing aminosulfonate
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4585624A (en) * 1984-11-19 1986-04-29 Young Galen F Paraformaldehyde gas generator for fumigating animal houses
IN161639B (enExample) * 1985-05-23 1988-01-09 Hollandse Signaalapparaten Bv
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
US5350489A (en) * 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
US5085786A (en) * 1991-01-24 1992-02-04 Minnesota Mining And Manufacturing Company Aqueous film-forming foamable solution useful as fire extinguishing concentrate
US6201122B1 (en) * 1992-12-08 2001-03-13 3M Innovative Properties Company Fluoroaliphatic radical-containing anionic sulfonamido compounds
EP0691676B1 (en) * 1993-02-04 1999-05-12 Daikin Industries, Limited Wet-etching composition for semiconductors excellent in wettability
US5803956A (en) * 1994-07-28 1998-09-08 Hashimoto Chemical Company, Ltd. Surface treating composition for micro processing
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
JP3923097B2 (ja) * 1995-03-06 2007-05-30 忠弘 大見 洗浄装置
US5688884A (en) * 1995-08-31 1997-11-18 E. I. Du Pont De Nemours And Company Polymerization process
JP3332700B2 (ja) 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
WO1997046283A1 (en) 1996-06-06 1997-12-11 Minnesota Mining And Manufacturing Company Fire-fighting agents containing adsorbable fluorocarbon surfactants
US6630074B1 (en) * 1997-04-04 2003-10-07 International Business Machines Corporation Etching composition and use thereof
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
WO2000064828A1 (fr) * 1999-04-27 2000-11-02 Hiroshi Miwa Composition de gravure du verre et procede de givrage utilisant cette composition
US6600557B1 (en) * 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
WO2001030873A1 (en) 1999-10-27 2001-05-03 3M Innovative Properties Company Fluorochemical sulfonamide surfactants
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US20020089044A1 (en) * 2001-01-09 2002-07-11 3M Innovative Properties Company Hermetic mems package with interlocking layers
JP2002256460A (ja) * 2001-02-09 2002-09-11 Nippon Parkerizing Co Ltd アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法
US20020142619A1 (en) * 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Also Published As

Publication number Publication date
CN1324110C (zh) 2007-07-04
CN1694939A (zh) 2005-11-09
WO2004044091A1 (en) 2004-05-27
US7169323B2 (en) 2007-01-30
KR101036068B1 (ko) 2011-05-19
KR20050072795A (ko) 2005-07-12
ATE345375T1 (de) 2006-12-15
US20040089840A1 (en) 2004-05-13
DE60309738T2 (de) 2007-09-20
EP1558697B1 (en) 2006-11-15
EP1558697A1 (en) 2005-08-03
JP4160562B2 (ja) 2008-10-01
JP2006505667A (ja) 2006-02-16
DE60309738D1 (de) 2006-12-28

Similar Documents

Publication Publication Date Title
AU2003272331A1 (en) Fluorinated surfactants for buffered acid etch solutions
AU2003278831A1 (en) Fluorinated surfactants for aqueous acid etch solutions
TW200606248A (en) Fluorinated sulfonamide surfactants for aqueous cleaning solutions
WO2002013241A3 (en) Method of etching titanium nitride
TW200736369A (en) Highly selective doped oxide etchant
TW200624998A (en) Photomask-blank, photomask and fabrication method thereof
AU2003256520A1 (en) Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
AU2003295550A1 (en) Wipes and their use
TW327700B (en) The method for using rough oxide mask to form isolating field oxide
WO2004027840A3 (en) Process for etching silicon wafers
WO2005041366A3 (en) Quantum dot structures
MY135681A (en) Method for manufacturing glass substrate of information recording medium
EP1178526A3 (en) Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device
TW200739700A (en) Etchant and method for fabricating liquid crystal display using the same
TW200502425A (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
ATE381909T1 (de) Implantat, beispielsweise zahnimplantat
AU2002248614A1 (en) Ruthenium silicide processing methods
EP1271642A3 (en) Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same
CA2411582A1 (en) Method for increasing the antioxidative potential of selenium-containing aqueous solutions
AU2003261458A1 (en) Enhancement of the wetting of hydrophobic surfaces by aqueous surfactant solutions
AU2003291781A1 (en) Etching of algainassb
SG94868A1 (en) Electrochemical etch for high tin solder bumps
WO2005096747A3 (en) Highly selective silicon oxide etching compositions
WO2003054247A3 (en) Cleaning gas composition for semiconductor production equipment and cleaning method using the gas
BR0209697A (pt) Processo de fabricação de cerveja

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase