JP2006503972A - 半導体デバイスを洗浄するための水性リン酸組成物 - Google Patents

半導体デバイスを洗浄するための水性リン酸組成物 Download PDF

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Publication number
JP2006503972A
JP2006503972A JP2005501654A JP2005501654A JP2006503972A JP 2006503972 A JP2006503972 A JP 2006503972A JP 2005501654 A JP2005501654 A JP 2005501654A JP 2005501654 A JP2005501654 A JP 2005501654A JP 2006503972 A JP2006503972 A JP 2006503972A
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JP
Japan
Prior art keywords
acid
weight
semiconductor cleaning
aqueous
optionally
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Pending
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JP2005501654A
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English (en)
Japanese (ja)
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JP2006503972A5 (https=
Inventor
ダヴィオット，ジェローム
レイド，クリストファー
ホームズ，ダグラス
Original Assignee
イーケーシー テクノロジー，インコーポレイティド
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Application filed by イーケーシー テクノロジー，インコーポレイティド filed Critical イーケーシー テクノロジー，インコーポレイティド
Publication of JP2006503972A publication Critical patent/JP2006503972A/ja
Publication of JP2006503972A5 publication Critical patent/JP2006503972A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3227—Ethers thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2005501654A 2002-10-22 2003-10-21 半導体デバイスを洗浄するための水性リン酸組成物 Pending JP2006503972A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41996802P 2002-10-22 2002-10-22
US43036502P 2002-12-03 2002-12-03
PCT/US2003/033500 WO2004037962A2 (en) 2002-10-22 2003-10-21 Aqueous phosphoric acid compositions for cleaning semiconductor devices

Publications (2)

Publication Number Publication Date
JP2006503972A true JP2006503972A (ja) 2006-02-02
JP2006503972A5 JP2006503972A5 (https=) 2006-12-07

Family

ID=32179772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005501654A Pending JP2006503972A (ja) 2002-10-22 2003-10-21 半導体デバイスを洗浄するための水性リン酸組成物

Country Status (10)

Country Link
US (1) US7235188B2 (https=)
EP (1) EP1576072B1 (https=)
JP (1) JP2006503972A (https=)
KR (1) KR20050084917A (https=)
AT (1) ATE405622T1 (https=)
AU (1) AU2003286584A1 (https=)
DE (1) DE60323148D1 (https=)
ES (1) ES2310677T3 (https=)
TW (1) TWI309675B (https=)
WO (1) WO2004037962A2 (https=)

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KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법
US9291904B2 (en) 2006-12-25 2016-03-22 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP2016178339A (ja) * 2005-01-27 2016-10-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基材の処理のための組成物

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US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
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US8765653B2 (en) 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
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TWI577834B (zh) * 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
US20140329184A1 (en) * 2011-11-22 2014-11-06 Taminco Stabilized choline solutions and methods for preparing the same
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US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
KR102227978B1 (ko) * 2014-05-22 2021-03-15 삼성전자주식회사 전기습윤 소자용 유체 및 이를 이용한 전기습윤 소자
JP6363724B2 (ja) * 2014-10-31 2018-07-25 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
CN108573856B (zh) * 2018-04-13 2020-09-04 深圳市华星光电技术有限公司 一种阵列基板的制备方法及清洗液
US12176419B2 (en) * 2019-02-15 2024-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device
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KR102503999B1 (ko) * 2022-11-14 2023-02-27 강연중 질산과 약산을 일정 비율로 포함하여 반도체 설비 챔버하우징의 세정 시 발생하는 질소산화물 가스 발생을 줄이고 오염막을 효과적으로 제거하는 세정제 조성물
CN117327542A (zh) * 2023-09-27 2024-01-02 湖北宇浩高科新材料有限公司 一种清洗剂、无水磷酸铁生产装置的除垢方法及应用
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Publication number Priority date Publication date Assignee Title
JP2016178339A (ja) * 2005-01-27 2016-10-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基材の処理のための組成物
US9291904B2 (en) 2006-12-25 2016-03-22 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
KR101624923B1 (ko) * 2006-12-25 2016-05-27 후지필름 가부시키가이샤 다중현상용 레지스트 조성물을 사용하는 패턴형성방법
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KR101261599B1 (ko) 2012-10-23 2013-05-06 (주)아이리스 친환경 장비 세척제 및 이의 제조방법

Also Published As

Publication number Publication date
TW200420724A (en) 2004-10-16
AU2003286584A1 (en) 2004-05-13
EP1576072B1 (en) 2008-08-20
KR20050084917A (ko) 2005-08-29
AU2003286584A8 (en) 2004-05-13
ES2310677T3 (es) 2009-01-16
EP1576072A4 (en) 2006-05-17
WO2004037962A2 (en) 2004-05-06
EP1576072A2 (en) 2005-09-21
WO2004037962A3 (en) 2004-09-23
US20040137736A1 (en) 2004-07-15
DE60323148D1 (de) 2008-10-02
US7235188B2 (en) 2007-06-26
ATE405622T1 (de) 2008-09-15
TWI309675B (en) 2009-05-11

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