JP2006502560A5 - - Google Patents

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Publication number
JP2006502560A5
JP2006502560A5 JP2003564937A JP2003564937A JP2006502560A5 JP 2006502560 A5 JP2006502560 A5 JP 2006502560A5 JP 2003564937 A JP2003564937 A JP 2003564937A JP 2003564937 A JP2003564937 A JP 2003564937A JP 2006502560 A5 JP2006502560 A5 JP 2006502560A5
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JP
Japan
Prior art keywords
region
array
gate
die
substrate
Prior art date
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Application number
JP2003564937A
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English (en)
Japanese (ja)
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JP4732692B2 (ja
JP2006502560A (ja
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Application filed filed Critical
Priority claimed from PCT/US2003/002326 external-priority patent/WO2003065454A2/en
Publication of JP2006502560A publication Critical patent/JP2006502560A/ja
Publication of JP2006502560A5 publication Critical patent/JP2006502560A5/ja
Application granted granted Critical
Publication of JP4732692B2 publication Critical patent/JP4732692B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003564937A 2002-01-29 2003-01-27 パワー・モジュールおよびその製造方法 Expired - Lifetime JP4732692B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35380902P 2002-01-29 2002-01-29
US60/353,809 2002-01-29
PCT/US2003/002326 WO2003065454A2 (en) 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein

Publications (3)

Publication Number Publication Date
JP2006502560A JP2006502560A (ja) 2006-01-19
JP2006502560A5 true JP2006502560A5 (enExample) 2006-03-16
JP4732692B2 JP4732692B2 (ja) 2011-07-27

Family

ID=27663256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003564937A Expired - Lifetime JP4732692B2 (ja) 2002-01-29 2003-01-27 パワー・モジュールおよびその製造方法

Country Status (8)

Country Link
US (2) US6939743B2 (enExample)
EP (1) EP1470588B1 (enExample)
JP (1) JP4732692B2 (enExample)
KR (1) KR20040085169A (enExample)
CN (1) CN100380661C (enExample)
AT (1) ATE339013T1 (enExample)
DE (1) DE60308148T2 (enExample)
WO (1) WO2003065454A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342232B2 (ja) * 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
JP7153649B2 (ja) 2016-12-16 2022-10-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト ゲートパスインダクタンスが低いパワー半導体モジュール
JP6838243B2 (ja) * 2017-09-29 2021-03-03 日立Astemo株式会社 電力変換装置
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
EP4102559A1 (en) 2021-06-10 2022-12-14 Hitachi Energy Switzerland AG Power semiconductor module
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
JP2751707B2 (ja) * 1992-01-29 1998-05-18 株式会社日立製作所 半導体モジュール及びそれを使った電力変換装置
JPH04183001A (ja) * 1990-11-16 1992-06-30 Mitsubishi Electric Corp マイクロ波ｉｃ用パッケージ
JPH0575314A (ja) * 1991-09-13 1993-03-26 Matsushita Electron Corp マイクロ波集積回路素子
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
US6291878B1 (en) * 1993-04-22 2001-09-18 Sundstrand Corporation Package for multiple high power electrical components
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
DE19644009A1 (de) * 1996-10-31 1998-05-07 Siemens Ag Großflächiges Hochstrommodul eines feldgesteuerten, abschaltbaren Leistungs-Halbleiterschalters
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
JP4163818B2 (ja) * 1999-07-07 2008-10-08 三菱電機株式会社 内部整合型トランジスタ
JP4138192B2 (ja) * 1999-12-27 2008-08-20 三菱電機株式会社 半導体スイッチ装置
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors

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