JP4732692B2 - パワー・モジュールおよびその製造方法 - Google Patents

パワー・モジュールおよびその製造方法 Download PDF

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JP4732692B2
JP4732692B2 JP2003564937A JP2003564937A JP4732692B2 JP 4732692 B2 JP4732692 B2 JP 4732692B2 JP 2003564937 A JP2003564937 A JP 2003564937A JP 2003564937 A JP2003564937 A JP 2003564937A JP 4732692 B2 JP4732692 B2 JP 4732692B2
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substrate
gate
die
array
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JP2006502560A5 (enExample
JP2006502560A (ja
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リチャード， ビー． フレイ，
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マイクロセミ コーポレーション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
JP2003564937A 2002-01-29 2003-01-27 パワー・モジュールおよびその製造方法 Expired - Lifetime JP4732692B2 (ja)

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GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
JP7153649B2 (ja) 2016-12-16 2022-10-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト ゲートパスインダクタンスが低いパワー半導体モジュール
JP6838243B2 (ja) * 2017-09-29 2021-03-03 日立Astemo株式会社 電力変換装置
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
EP4102559A1 (en) 2021-06-10 2022-12-14 Hitachi Energy Switzerland AG Power semiconductor module
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

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US20030141587A1 (en) 2003-07-31
DE60308148D1 (de) 2006-10-19
ATE339013T1 (de) 2006-09-15
US6939743B2 (en) 2005-09-06
WO2003065454A3 (en) 2004-02-26
CN100380661C (zh) 2008-04-09
CN1625807A (zh) 2005-06-08
EP1470588B1 (en) 2006-09-06
US20050218500A1 (en) 2005-10-06
EP1470588A2 (en) 2004-10-27
KR20040085169A (ko) 2004-10-07
JP2006502560A (ja) 2006-01-19
US7342262B2 (en) 2008-03-11
WO2003065454A2 (en) 2003-08-07

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