WO2003065454A2 - Split-gate power module and method for suppressing oscillation therein - Google Patents

Split-gate power module and method for suppressing oscillation therein Download PDF

Info

Publication number
WO2003065454A2
WO2003065454A2 PCT/US2003/002326 US0302326W WO03065454A2 WO 2003065454 A2 WO2003065454 A2 WO 2003065454A2 US 0302326 W US0302326 W US 0302326W WO 03065454 A2 WO03065454 A2 WO 03065454A2
Authority
WO
WIPO (PCT)
Prior art keywords
area
gate
die
frequency
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/002326
Other languages
English (en)
French (fr)
Other versions
WO2003065454A3 (en
Inventor
Richard B. Frey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Corp Power Products Group
Original Assignee
Advanced Power Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Power Technology Inc filed Critical Advanced Power Technology Inc
Priority to DE60308148T priority Critical patent/DE60308148T2/de
Priority to JP2003564937A priority patent/JP4732692B2/ja
Priority to KR10-2004-7011632A priority patent/KR20040085169A/ko
Priority to EP03705914A priority patent/EP1470588B1/en
Publication of WO2003065454A2 publication Critical patent/WO2003065454A2/en
Publication of WO2003065454A3 publication Critical patent/WO2003065454A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6688—Mixed frequency adaptations, i.e. for operation at different frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides
    • H01L2924/19032—Structure including wave guides being a microstrip line type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Definitions

  • the present invention relates to power modules containing plural transistor dies providing a single external gate terminal. More particularly, it concerns a power module that operates at a first frequency without oscillation at a second higher frequency that is below a cutoff frequency of the transistors.
  • FIGs. 1 and 2 illustrate two such prior art configurations, Fig. 1 illustrating a device known as the SGS Thompson TH430 and Fig. 2 illustrating a device known as the Toshiba TPM1919.
  • the SGS Thompson TH430 shown in Fig. 1 is a four-die bipolar device incorporating a center base feed with the emitters on the outside of the rectangular array. There is no provision in this design for equalizing the path length from the base terminal to the individual die bases. It is believed that the upper frequency of the die, referred to herein as the cutoff frequency of the transistors, is close to the 50MHz upper frequency limit of the four-die device.
  • the Toshiba TPM1919 shown in Fig. 2 is a 2GHz device having four MESFET dies in a linear array. It uses an "echelon" divider structure to divide the gate signal four ways. There are matching networks between the gate connections and the ends of the divider structure. It is believed that these matching networks provide impedance transformation at the intended frequency of operation which facilitates implementation of the device.
  • the device's input structure provides certain balancing and isolation functions. Its frequency of operation is believed to be near the upper limit of the individual dies. Accordingly, the known prior art devices operate at the top end of the dies' frequency capability.
  • the prior art gate and/or base wires are necessarily short because of the very high frequencies involved. As a result, their parasitic resonant (and potential oscillation) frequency is higher than the frequency at which the dies run out of gain. Thus, there is little or no oscillation.
  • the Motorola design MRF 154 (FIG. 2') is described in U.S. Patent No. 4,639,760 uses series gate resistors to intentionally substantially reduce the gain of the individual gate cells to substantially prevent oscillation.
  • the die has gain response to >500 MHz, but the intended frequency range of the total device was ⁇ 100 MHz. Thus, the Motorola design has excess gain.
  • the invention involves a method of packaging and interconnecting four power transistor dies to operate at a first frequency without oscillation at a second frequency higher than the first frequency but lower than a cutoff frequency of the transistors.
  • the method comprises mounting the dies on a substrate with a lower side (drain) of each die electrically and thermally bonded to a first area of a conductive layer on the substrate; electrically connecting a source of each die to a second area of the conductive layer on the substrate; and electrically connecting a gate of each die to a third, common interior central area of the conductive layer on the substrate via separate electrical leads.
  • the leads are sized to substantially the same electrical length and provide a first impedance corresponding to said electrical length from the common area to each gate that will pass the first frequency substantially unattenuated and providing a second impedance from the gate of one die to the gate of a second die that will substantially attenuate the second frequency.
  • the leads take the form of one or more jumper wires in series with a film resistor.
  • they take the form of one or more meandering striplines having predefined impedance characteristics and one or more gate bonding pads connected to their respective gates with long jumper wires.
  • FIG. 4 is a schematic diagram of a second embodiment of the present invention.
  • FIG. 5 is a more detailed schematic diagram of the gate structure of the embodiment shown in FIG. 3.
  • FIG. 6 is a more detailed schematic diagram of the gate structure of the embodiment shown in FIG. 4.
  • the input capacitance of the transistors in accordance with the invention, is high. This high capacitance lowers the resonant frequency of the parasitic structure of the transistors, which can cause oscillation when the transistors are coupled in parallel in a power module. Because of the higher input capacitance and the use of source resistors, in accordance with a first embodiment of the invention, the gain at the intended frequency of operation is not very high to begin with.
  • a second embodiment of the invention utilizes gate inductors instead of gate resistors, and provides higher gain without oscillation.
  • Fig. 3 illustrates a first embodiment of the invention having balanced gate input connections that utilize printed series resistors.
  • a relatively lower gain amplifier is obtained, but one that performs without undesirable oscillation.
  • smaller dies having greater gain may be used so that the series resistors do not consume most of the gain margin at the desired operating frequency.
  • Fig. 3 shows the four-die (each labeled 1) array mounted on a preferably ceramic (e.g. BeO) substrate 2 providing a conductive source connection area 3, a conductive drain connection area 4 and a conductive gate connection area 5.
  • Thin- film source resistors 6 e.g. palladium gold
  • Gate bond wires 7 and source bond wires 8 e.g. aluminum
  • source bond pads 9 e.g. silver
  • Jumper wires 10 e.g. aluminum
  • the far ends of gate resistors 13 are wire bonded by gate bond wires 7 to plural corresponding gate connections on each of the dies 1.
  • Fig. 4 shows a second embodiment of the invention having balanced gate input connections that utilize printed meandering striplines or stripline connection lines 11 exhibiting a relatively high intrinsic inductance. Because the impedance of the inductive striplines is frequency-dependent (unlike that of the resistors, which is frequency-independent), it is possible to achieve higher gain without oscillation in this second embodiment of the invention. It will be appreciated that the layout topology of the second embodiment is like that of the first: the gates' first off-die connection is to be in a common interior central location therein. Those of skill in the art will appreciate that the striplines also intrinsically have a characteristic resistance and capacitance, however low.
  • the meandering striplines are of substantially equal electrical length, i.e. they exhibit nearly identical impedances (including . resistance, inductance and capacitance), and extend from an external gate terminal 5' through jumper wires 10 to a central common landing region L' within the die array and between adjacent dies.
  • the meandering inductors terminate in gate bonding pads 12' for wire bonding using gate bond wires 7' to the plural corresponding gate pads on each of the dies 1.
  • substrate 2, source connection area 3, drain connection area 4, source resistors 6, source bond wires 8 and source bond pads 9 are substantially identical to those of the first embodiment of the invention described above relative to Fig. 3.
  • Fig. 5 is a detailed schematic diagram showing only the gate connection area of the device of Fig. 3.
  • Fig. 5 features the above-described gate connection 5 for the device and bond wires 7. It also shows second (central) gate connection bond wires 10 (six in accordance with the first embodiment shown) providing a controlled-impedance (e.g. resistive/inductive/capacitive) path between gate connection 5 and the centrally located gate landing L. It further shows the gate bonding pads 12 (one per die). Finally, it shows preferably printed circuit resistors 13 (also one per die).
  • the number of jumper wires 10 and their lengths may be adjusted to achieve desired inductance, resistance and current capacity for a given application.
  • the gate series resistors are approximately 3 ⁇ or less. Those of skill in the art will appreciate that the series resistance value is selected to effectively suppress oscillation at a given operating frequency of the device, while not reducing the overall gain of the device more than is necessary. Also, as illustrated in the preferred first embodiment, the six thin jumper wires 10 are arranged in parallel.
  • Fig. 6 is a detailed schematic diagram showing only the gate connection area of the device of Fig. 4.
  • the second embodiment of the invention omits the gate series resistors 13, reconfigures the gate bonding pads 12' to a smaller footprint, and incorporates four controlled-impedance stripline connection lines 11 extending as shown between a common central landing L' and bonding pads 12'.
  • the landing L' may be seen to be connected to the gate connection 5' via six parallel jumper wires 10, as in Figs. 3 and 5.
  • the typical characteristic impedance of the controlled-impedance striplines- -compatible with the selected dies- is approximately 90 ⁇ , as determined by their width and the thickness and dielectric properties of the substrate 2.
  • the striplines are approximately 0.65 inch long and 0.013 inch wide, while the substrate is approximately 40 mils thick.
  • the input impedance of the dies 1 themselves is less than approximately 0.2 ⁇ .
  • striplines may be differently characterized, formed and/or routed, within the spirit and scope of the invention.
  • a rectangular array of four-die is represented.
  • Other geometric arrangements, circular, triangular, etc., with more or less die could also be used with the method described, and are within the spirit and scope of the invention. Accordingly, having illustrated and described the principles of our invention in a preferred embodiment thereof, it should be readily apparent to those skilled in the art that the invention can be modified in arrangement and detail without departing from such principles. We claim all modifications coming within the spirit and scope of the accompanying claims.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
PCT/US2003/002326 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein Ceased WO2003065454A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE60308148T DE60308148T2 (de) 2002-01-29 2003-01-27 Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin
JP2003564937A JP4732692B2 (ja) 2002-01-29 2003-01-27 パワー・モジュールおよびその製造方法
KR10-2004-7011632A KR20040085169A (ko) 2002-01-29 2003-01-27 스플릿 게이트 파워 모듈과 그 모듈안의 진동을 억제하는방법
EP03705914A EP1470588B1 (en) 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35380902P 2002-01-29 2002-01-29
US60/353,809 2002-01-29

Publications (2)

Publication Number Publication Date
WO2003065454A2 true WO2003065454A2 (en) 2003-08-07
WO2003065454A3 WO2003065454A3 (en) 2004-02-26

Family

ID=27663256

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/002326 Ceased WO2003065454A2 (en) 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein

Country Status (8)

Country Link
US (2) US6939743B2 (enExample)
EP (1) EP1470588B1 (enExample)
JP (1) JP4732692B2 (enExample)
KR (1) KR20040085169A (enExample)
CN (1) CN100380661C (enExample)
AT (1) ATE339013T1 (enExample)
DE (1) DE60308148T2 (enExample)
WO (1) WO2003065454A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12293973B2 (en) 2021-06-10 2025-05-06 Hitachi Energy Ltd Power semiconductor module

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4342232B2 (ja) * 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
JP7153649B2 (ja) 2016-12-16 2022-10-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト ゲートパスインダクタンスが低いパワー半導体モジュール
JP6838243B2 (ja) * 2017-09-29 2021-03-03 日立Astemo株式会社 電力変換装置
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
JP2751707B2 (ja) * 1992-01-29 1998-05-18 株式会社日立製作所 半導体モジュール及びそれを使った電力変換装置
JPH04183001A (ja) * 1990-11-16 1992-06-30 Mitsubishi Electric Corp マイクロ波ｉｃ用パッケージ
JPH0575314A (ja) * 1991-09-13 1993-03-26 Matsushita Electron Corp マイクロ波集積回路素子
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
DE59304797D1 (de) * 1992-08-26 1997-01-30 Eupec Gmbh & Co Kg Leistungshalbleiter-Modul
US6291878B1 (en) * 1993-04-22 2001-09-18 Sundstrand Corporation Package for multiple high power electrical components
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
DE19644009A1 (de) * 1996-10-31 1998-05-07 Siemens Ag Großflächiges Hochstrommodul eines feldgesteuerten, abschaltbaren Leistungs-Halbleiterschalters
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
JP4163818B2 (ja) * 1999-07-07 2008-10-08 三菱電機株式会社 内部整合型トランジスタ
JP4138192B2 (ja) * 1999-12-27 2008-08-20 三菱電機株式会社 半導体スイッチ装置
US6617679B2 (en) * 2002-02-08 2003-09-09 Advanced Energy Industries, Inc. Semiconductor package for multiple high power transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12293973B2 (en) 2021-06-10 2025-05-06 Hitachi Energy Ltd Power semiconductor module

Also Published As

Publication number Publication date
DE60308148T2 (de) 2007-08-16
US20030141587A1 (en) 2003-07-31
DE60308148D1 (de) 2006-10-19
ATE339013T1 (de) 2006-09-15
US6939743B2 (en) 2005-09-06
WO2003065454A3 (en) 2004-02-26
CN100380661C (zh) 2008-04-09
CN1625807A (zh) 2005-06-08
EP1470588B1 (en) 2006-09-06
US20050218500A1 (en) 2005-10-06
EP1470588A2 (en) 2004-10-27
KR20040085169A (ko) 2004-10-07
JP4732692B2 (ja) 2011-07-27
JP2006502560A (ja) 2006-01-19
US7342262B2 (en) 2008-03-11

Similar Documents

Publication Publication Date Title
EP1573813B1 (en) Rf power transistor with internal bias feed
US6939743B2 (en) Split-gate power module and method for suppressing oscillation therein
JP6388428B2 (ja) インピーダンス整合回路を有する半導体デバイス、およびその製造方法
US9692363B2 (en) RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US7149496B2 (en) High-frequency module and radio communication apparatus
KR100197187B1 (ko) 고주파전력 증폭회로장치
CN1211858C (zh) 高频功率晶体管器件
CN107070418A (zh) 具有阻抗匹配电路的rf功率晶体管以及其制造方法
US4393392A (en) Hybrid transistor
EP3340463A1 (en) Distributed amplifiers with impedance compensation circuits
US6777791B2 (en) Multiple ground signal path LDMOS power package
EP0544387B1 (en) High gain monolithic microwave integrated circuit amplifier
EP3213411B1 (en) Output matching network having a single combined series and shunt capacitor component
US7019362B2 (en) Power MOSFET with reduced dgate resistance
EP0015709B1 (en) Constructional arrangement for semiconductor devices
US4975659A (en) Amplifier package using vertical power transistors with ungrounded common terminals
KR100369086B1 (ko) 콤팩트하이브리드마이크로웨이브쵸크
US6583673B2 (en) Stability enhanced multistage power amplifier
US11049837B2 (en) Bond wire array for packaged semiconductor device
JPH104325A (ja) 高周波増幅器、高周波通信機、能動半導体装置、インピーダンス整合装置及びリードフレーム
US6624703B1 (en) Terminal arrangement for an electrical device
CN113261200B (zh) 高频功率晶体管和高频功率放大器
EP1744604B1 (en) Amplifier with feedback bridge
EP4402800A1 (en) Bridged class-d rf amplifier circuit
JPH11204728A (ja) 高周波半導体装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2003705914

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2003564937

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020047011632

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2003802909X

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003705914

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2003705914

Country of ref document: EP