CN1211858C - 高频功率晶体管器件 - Google Patents

高频功率晶体管器件 Download PDF

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CN1211858C
CN1211858C CNB998140899A CN99814089A CN1211858C CN 1211858 C CN1211858 C CN 1211858C CN B998140899 A CNB998140899 A CN B998140899A CN 99814089 A CN99814089 A CN 99814089A CN 1211858 C CN1211858 C CN 1211858C
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C·布莱尔
T·巴拉德
J·库尔蒂斯
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Wolfspeed Inc
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Abstract

一种输出匹配的LDMOS RF功率晶体管器件(100)包括其上制作有多个叉指电极(110)的半导体管芯(108)，电极各具有各自的输入端子(112)和输出端子(114)。输入引线被多个第一导体(105)(例如键合金属丝)耦合到输入匹配电容器(106)的第一端子(107)，以匹配电容器的第二端子耦合到地(145)。匹配电容器的第一端子还被多个第二导体(116)耦合到电极输入端子。隔离于地的导电小岛(120)被多个第三导体(118)耦合到电极输出端子。器件的输出匹配由多个第四导体(122)形成的旁路电感(122)提供，它将输出隔直流电容器(124)的第一端子耦合到导电小岛，以隔直流电容器的第二端子耦合到地。输出引线被多个第五导体(126)耦合到导电小岛。确切地说，导电小岛被排列在半导体管芯附近，而输出隔直流电容器被排列在导电小岛与输出引线之间，使通过将电极输出端子耦合到隔直流电容器的各个多个第三和第四导体的传输电感足够小，以便能够在比较高的工作频率下获得晶体管器件的输出阻抗匹配。

Description

高频功率晶体管器件
技术领域
本发明一般涉及到射频功率晶体管领域领域，更具体地说是涉及到LDMOS功率晶体管器件输出阻抗匹配的方法和装置。
背景技术
射频(RF)放大器例如在无线通信网络中的应用，是众所周知的。随着新近对诸如个人通信服务(PCS)之类的无线服务的需求的大幅度增长，无线网络的工作频率已惊人地提高，现已达到了千兆赫(GHz)频率。在这样高的频率下，LDMOS(侧面扩散金属氧化物半导体)晶体管已经被优选为例如天线基站中的RF功率放大器件。
在典型配置中，LDMOS RF功率晶体管器件一般包含制作在硅管芯上的多个电极，每个电极包含多个叉指晶体管。各个电极的分立晶体管被连接到各个电极各自的公共输入(栅)端子和输出(漏)端子。用熟知的低共熔固定工艺，将管芯固定到其本身安装在作为热沉和地参考面的金属法兰上的金属性(源)衬底上。各个输入(栅)和输出(漏)引线框被固定到法兰的各个侧边，电隔离于金属(源)衬底，其中输入和输出引线框被多个金属丝耦合到硅管芯上的各自的电极输入和输出端子(亦即被键合到各个端子和引线框)。
为了放大器的恰当运行，特别是在高运行频率下，使输入和输出电极端子与各自的输入和输出引线框阻抗匹配，是极为重要的。
图1以说明的方式示出了不匹配的LDMOS器件的简化电路图，它具有输入(栅)引线12、输出(漏)引线14、和通过下方衬底的源16。电感18表示通过输入路径，例如将输入引线12连接到各个晶体管叉指的公共输入端子的多个键合金属丝的传输电感。电感20表示通过输出路径，例如将各个晶体管的公共输出端子连接到输出引线14的多个键合金属丝的输出电感。
图2示出了熟知的(匹配的)LDMOS功率晶体管器件40。此器件40包括输入(栅)引线42、输出(漏)引线44、和固定到安装法兰45的金属(源)衬底47。多个第一金属丝48将输入引线42耦合到输入匹配电容器46的第一端子。输入匹配电容器46的第二端子被耦合到地(亦即法兰45)。多个第二金属丝52将匹配电容器46的第一端子耦合到制作在固定于金属衬底47的半导体管芯50上的多个叉指电极51的各个输入端子49。借助于恰当地选择匹配电容器46以及金属丝48和52的串联电感，能够有效地匹配输入引线42和电极输入端子49之间的输入阻抗。
电极的各个输出端子53被多个第三金属丝54耦合到输出引线44。为了使器件的输出阻抗匹配，采用了旁路电感。为此，输出引线44被多个第四金属丝60耦合到隔直流(亦即交流短路)电容器58的第一端子，隔直流电容器58具有比输入匹配电容器46明显更高的电容值。图3示出了图2器件的示意电路，其中通过各个多个金属丝的传输电感由图2中的金属丝的相应参考号指出。
对于例如1500MHz的“较低频率”应用，图2的LDMOS器件40可以被适当地控制，但在较高的频率下，例如2GHz下，由于通过金属丝54到旁路电感60产生的串联电感比较大，使器件的有效控制变得困难。而且由于电极输出端子53上物理空间有限，大量金属丝54将多个电极51连接到输出引线44。
于是，希望提供一种LDMOS RF功率晶体管器件，其中能够更容易地实现比较高频率(例如GHz)下的输出匹配。
发明内容
根据本发明的第一情况，RF功率晶体管器件包含其上制作有多个电极的半导体管芯，电极具有各自的输出端子。导电小岛被提供在半导体管芯附近，并被多个第一导体耦合到电极输出端子。旁路电感匹配被多个第二导体从导电小岛耦合到隔直流电容器，而输出引线被多个第三导体独立地耦合到导电小岛。
以举例的方式，在一个优选实施方案中，LDMOS RF功率晶体管器件包括其上制作有多个叉指电极的半导体管芯，各个电极具有各自的输入端子和输出端子。输入引线被多个第一导体(例如键合金属丝)耦合到输入匹配电容器的第一端子，以匹配电容器的第二端子耦合到地。匹配电容器的第一端子还被多个第二导体耦合到电极输入端子。与地隔离的导电小岛被多个第三导体耦合到电极输出端子。器件的输出匹配由将导电小岛耦合到输出隔直流电容器的多个第四导体形成的旁路电感提供，隔直流电容器具有耦合到地的第二端子。输出引线被多个第五导体耦合到导电小岛。
导电小岛最好被排列在半导体管芯附近，而输出隔直流电容器排列在导电小岛与输出引线之间，使通过将电极输出端子耦合到隔直流电容器的各个多个第三和第四导体的传输电感足够小，以便能够在比较高的工作频率下得到晶体管器件的输出阻抗匹配。
根据本发明，提供了一种射频功率晶体管器件，它包含：一种射频功率晶体管器件，它包含：(a)其上制作有多个叉指电极的半导体管芯，每个叉指电极具有输入电极端子和输出电极端子；(b)具有被带有输入电感的多个第一导体耦合到一个输入引线的第一端子以及耦合到地的第二端子的输入匹配电容器；所述第一端子被多个第二导体耦合到所述叉指电极的所述各个输入电极端子；(c)具有一个第一端子以及一个连接到地的第二端子的输出隔直流电容器；以及(d)一个输出引线；其特征在于：(e)一个配置在所述半导体管芯附近的导电小岛，其被多个第三导体耦合到输出电极端子，所述导电小岛与地之间电隔离；(f)所述输出隔直流电容器的所述第一端子被多个第四导体耦合到所述导电小岛；(g)所述输出引线被带有输出电感的多个第五导体耦合到所述导电小岛；以及所述输出隔直流电容器被安排在所述导电小岛与所述输出引线之间，使得通过将输出电极端子耦合到输出隔直流电容器的各个多个第三和多个第四导体的传输电感小，以便能够在高的工作频率下获得所述晶体管器件的输出阻抗匹配。
如对本技术领域熟练人员显而易见的那样，本发明的其它进一步情况和优点，在下面将显现出来。
附图说明
在附图中，用举例的方法而不是限制的方法说明了本发明的优选实施方案，其中相似的参考号表示相似的元件，且其中：
图1是不匹配的LDMOS功率晶体管的示意电路图；
图2是现有技术LDMOS RF功率晶体管器件的局部俯视图；
图3是图2的LDMOS晶体管器件的示意电路图；
图4是根据本发明的优选LDMOS RF功率晶体管器件的俯视图；以及
图5是图4的LDMOS晶体管器件的示意电路图。
具体实施方式
参照图4和5，根据本发明的优选LDMOS RF功率晶体管器件100包括输入(亦即栅)引线框102以及固定到但电隔离于导电法兰145的输出(亦即漏)引线框104。以举例的方式，可以用陶瓷衬底143来将各个引线框102和104隔离于法兰145。排列在法兰顶部的是金属(亦即源)衬底103。在优选实施方案中，金属(源)衬底包含金或金的合金。
例如用超声擦洗和/或加热方法，一对半导体(例如硅)管芯108被固定到金属衬底103。各个管芯108上已经制作有多个各自的叉指电极110，各个电极具有各自的输入(栅)端子112和输出(漏)端子114。二个管芯108上的电极110的各个输入和输出端子112和114，以同样的方式被连接到各自的引线框102和104。但对于所示的情况，余下的描述只对一个管芯108的电极110进行。
相似于图2所示现有技术器件40那样，执行器件100的输入匹配。亦即，通过邻近输入引线框102的(源)衬底103放置输入匹配电容器106。输入匹配电容器106具有被多个第一键合金属丝105耦合到输入引线框102的第一端子107。确切地说，金属丝105的一端被键合到输入引线框102，而另一端被键合到匹配电容器106的第一端子107。匹配电容器106具有耦合到(地)法兰145的第二端子(未示出)。多个第二金属丝116将匹配电容器106的第一端子107耦合到电极110的各个输入端子112，亦即，金属丝116的一端被键合到匹配电容器端子107，而另一端被键合到各个电极输入端子112。从而借助于选择所希望的匹配电容器106的电容值以及金属丝105和106的电感，执行器件100的输入匹配。
根据本发明，器件100的输出匹配如下完成：
由不导电材料(例如氧化铝)隔离于法兰145的导电小岛120，被提供在半导体管芯108附近，其中导电小岛120被电隔离于(地)法兰145。多个第三键合金属丝118将各个电极输出端子114耦合到导电小岛120。输出隔直流电容器124通过金属衬底103被排列在导电小岛120与输出引线框104之间。旁路电感由多个第四键合金属丝122形成，它将导电小岛耦合到隔直流电容器124的第一端子125。隔直流电容器124的第二端子(未示出)被耦合到(地)法兰145。输出引线框104被多个第五键合金属丝126独立地耦合到导电小岛120。
值得注意的是，通过耦合电极输出端子114到旁路电感122的金属丝118和122的输出串联电感，相对于图2所示现有技术器件40，被明显减小了。而且，由于更长的金属丝不受电极输出端子114的数目的限制，故器件100中的导电小岛120使得明显比器件40中更多的金属丝126能够被用来将小岛120耦合到输出引线104。因此，可以比器件40更容易地实现器件100的输出匹配，特别是在例如进入千兆赫频段的比较高的工作频率下，更是如此。
虽然已经描述了输出匹配的LDMOS功率晶体管器件的优选实施方案和应用，但如对本技术熟练人员显而易见那样，有可能作出许多修正和应用而不偏离此处发明的概念。
于是，除了根据所附权利要求之外，所公开的发明的范围不受限制。

Claims (4)

1.一种射频功率晶体管器件(100)，它包含：
(a)其上制作有多个叉指电极(110)的半导体管芯(108)，每个叉指电极(110)具有输入电极端子(112)和输出电极端子(114)；
(b)具有被带有输入电感的多个第一导体(105)耦合到一个输入引线(102)的第一端子(107)以及耦合到地的第二端子的输入匹配电容器(106)；所述第一端子(107)被多个第二导体(116)耦合到所述叉指电极(110)的所述各个输入电极端子(112)；
(c)具有一个第一端子(125)以及一个连接到地的第二端子的输出隔直流电容器(124)；以及
(d)一个输出引线(104)；
其特征在于
(e)一个配置在所述半导体管芯(108)附近的导电小岛(120)，其被多个第三导体(118)耦合到输出电极端子(114)，所述导电小岛(120)与地之间电隔离；
(f)所述输出隔直流电容器(124)的所述第一端子(125)被多个第四导体(122)耦合到所述导电小岛(120)；
(g)所述输出引线(104)被带有输出电感的多个第五导体(126)耦合到所述导电小岛(120)；以及
所述输出隔直流电容器(124)被安排在所述导电小岛(120)与所述输出引线(104)之间，使得通过将输出电极端子(114)耦合到输出隔直流电容器(124)的各个多个第三(118)和多个第四(122)导体的传输电感小，以便能够在高的工作频率下获得所述晶体管器件的输出阻抗匹配。
2.权利要求1的射频功率晶体管器件(100)，其特征在于，所述各个多个导体(105，116，118，122，126)各包含金属丝。
3.权利要求1的射频功率晶体管器件(100)，其特征在于，所述射频功率晶体管器件(100)是一个侧面扩散金属氧化物半导体射频功率晶体管器件。
4.权利要求1的射频功率晶体管器件(100)，其特征在于，所述半导体管芯(108)是一个硅管芯。
CNB998140899A 1998-12-02 1999-11-23 高频功率晶体管器件 Expired - Lifetime CN1211858C (zh)

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