CN101084622B - 功率器件和功率器件的控制方法 - Google Patents

功率器件和功率器件的控制方法 Download PDF

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CN101084622B
CN101084622B CN2005800436255A CN200580043625A CN101084622B CN 101084622 B CN101084622 B CN 101084622B CN 2005800436255 A CN2005800436255 A CN 2005800436255A CN 200580043625 A CN200580043625 A CN 200580043625A CN 101084622 B CN101084622 B CN 101084622B
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power
power device
transistor
port
electric capacity
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CN101084622A (zh
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伊戈尔·布莱德诺夫
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Samba Holdco Netherlands BV
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Koninklijke Philips Electronics NV
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Abstract

一种RF功率器件，包括晶体管和小型阻抗变换电路，其中变换电路包括集总元件CLC模拟传输线和相关的嵌入式定向双向RF功率检测器，该检测器与传输线感性耦合，以提供独立的和高指向性的直接功率和反射功率检测。

Description

功率器件和功率器件的控制方法
技术领域
本发明涉及一种功率器件和一种用于监测功率器件的方法。
背景技术
放大器中的RF功率器件接收输入信号并提供输出信号，该输出信号典型地大于输入信号。
然而，许多形式的功率器件需要某种形式的功率控制来维持或改进功率器件的特性，例如功率器件的效率或线性特性。具体地，在多种线性系统中，RF功率器件典型地需要某种形式的输出功率监测和控制，以确保放大后的输出信号中输入信号的调制分量具有可接受的线性。
一种用于在RF功率器件中提供功率监测的公知技术是使用RF功率耦合器，RF功率耦合器可以用于提供微波电路中的功率划分或分布，以允许对RF功率器件进行偏置和控制，RF功率耦合器可以用于多种应用中，例如RF功率控制系统、RF功率监测、RF放大器的线性化(例如包络消除和恢复)和前馈放大器。
此外，RF功率耦合器还可以用于为RF功率器件在输出失配期间免受故障而提供保护，其中通过监测从输出负载反映出的功率而识别输出失配。
典型地，使用分布式传输线和集总元件LC网络来提供RF功率耦合器。然而，由于多数RF功率耦合器基于具有有限介电常数的在衬底表面上形成的四分之一波长传输线的性质，这将导致传输线相对长，例如对于工作频率为2GHz来说，即使在具有相对高的介电常数(例如Er等于10)的衬底上形成的四分之一波长传输线也会具有20mm的量级。
由此，使用分布式耦合器需要印刷电路板上相当数量的空间，因此将会导致当用于功率控制和线性化时，引入了输出信号的扣除复制(subtracted replica)的额外时延。
期望改进这种情况。
发明内容
本发明的目的是提供一种功率检测器，用于监测具有小型设计和高指向性的功率器件的直接功率和反射功率。
根据本发明一方面，提供了一种功率器件和一种功率器件的监测方法。
一种功率器件，包括：
晶体管；
传输线，被设置为形成晶体管(102)的输出阻抗匹配电路(106)；
定向耦合器，与传输线感性耦合，以形成晶体管的功率检测器，其中，定向耦合器是集总元件感性电容耦合器，所述集总元件感性电容耦合器包括将晶体管耦合到输出连接器的多条接合线之间的互感，以及在多条接合线和地参考之间形成的多个电容的组合。
本发明提供的优点是，允许对传递至负载的功率和从负载反射的功率独立地进行控制，在前向和反射功率检测端口之间具有高方向性或隔离。
另外，本发明提供的优点是，允许把双向功率检测电路合并到具有小型设计封装的RF功率模块的分立器件中。具体地，传输线的接地面可以被设置为封装的一部分，也作为散热器的一部分，其中所述分立器件装配在散热器上或当然是分开装配。这样，可以利用接合线来实现感性耦合。
此外，已经发现的是，使功率检测器处于分立功率晶体管的封装内表现出良好的耦合行为。可以利用宽范围的隔离来确定与功率器件相关的直接功率和反射功率，从而允许对功率器件进行更好和更为精确的控制。
功率检测器检测到的信号适用加到偏置控制电路的输入。因此，可以设置放大器的最大等级。
具体地，被设置用于形成晶体管的输出阻抗匹配电路的传输线是模拟具有特性阻抗Z的四分之一波长传输线的集总元件。这提供的优点是，允许实现比分布式传输线更为紧密的设计。最适合地，阻抗变换CLC电路的感性元件被设置为多个并联接合线。这提供的优点是，在功率器件的输出端提供了高品质的、灵活的且几乎为理想的感性元件。使用并联接合线和容性组件能够为变换电路提供宽范围的特性阻抗。另外，这个变换电路适于用在集成双向功率检测电路的设计中。
优选地，‘低通’滤波器电路用作RF功率器件(即晶体管)的输入。期望借助于这个低通滤波器的预匹配能够对前面放大器级的晶体管的阻抗或甚至是收发机IC进行匹配。适合的预匹配电路包括L-C-L拓扑，其中电容器连接在输入信号和地之间。电感适于以多个接合线的形式而内嵌。针对多个接合线的长度和数目进行选择，以对期望的阻抗和滤波器特性进行最优化。
若干晶体管彼此并联放置、同时功率晶体管仅与其中一个晶体管相连是适合的。在功率放大器的应用中，期望功率检测器提供对输出电平的进一步调谐。完全不需要修改功率设置。结果，为了最小化损失，适于把功率器件再分为若干个并联的晶体管，其中仅有一个晶体管被设置有功率检测器以允许进一步的调谐。
功率检测器自身与保护信号输出相连也是适合的。保护信号输出适合地为提供反射功率电平的隔离端口。例如，它通过合适选择的电阻与地相连。
在其它实施例中，功率晶体管的输入可以与另一个功率晶体管的输出相连。这导致了两级放大器。耦合可以在这里延伸，从而不仅能够调整主功率晶体管的功率电平，而且如果需要更大的修改还可以对第一级的功率电平进行调整。本发明的第一实施方式可以是，如果耦合反馈超过了特定的阈值电压，那么功率控制信号端口将向第一级提供信号。本发明的第二实施方式是，存在与第一级的输出和第二级(例如主晶体管)的输入相连的分立功率检测器。
附图说明
参考下文描述的实施例，本发明的这些和其它方面将会变得明显并得以说明。
作为示例，参考附图对本发明的实施例进行描述，其中：
图1示出了根据本发明第一实施例的功率器件；
图2示出了根据本发明第二实施例的功率器件；
图3示出了根据本发明实施例具有双向功率检测器的阻抗变换/匹配电路；
图4示出了根据本发明实施例的阻抗匹配电路的等效示意图；
图5、6、7、8示出了根据本发明实施例的双向功率检测器电路的一些性能特性。
具体实施方式
图1示出了形成于衬底101上以形成分立封装的等效功率器件100，例如适于对RF信号进行放大的功率器件。
功率器件100包括RF功率晶体管管芯102，例如MOSFET、LDMOST、BJT或HBT器件，管芯102通过预匹配电路104与功率器件输入连接器/引线103相连，以允许RF功率晶体管102的阻抗与信号源的阻抗匹配，这是本领域的技术人员所公知的。
晶体管管芯102的输出通过输出阻抗匹配电路106与功率器件输出连接器105相连，输出阻抗匹配电路106被设置为允许把晶体管102的输出阻抗变换为负载所需的阻抗，这是本领域的技术人员所公知的。
如下文所述，通过使用集总元件电容和作为感应元件的接合线，输出阻抗匹配电路106被设置为形成等效的四分之一波长传输线。
双向功率监测电路107(即被设置为对两个方向上的功率(直接功率和反射功率)进行监测的功率监测电路)与输出阻抗匹配电路106感性耦合。双向功率监测电路107被设置为具有第一端口109和第二端口110。双向功率监测电路107在第一端口106处提供了经过输出阻抗匹配电路106的一部分前向输出功率，并且在第二端口110处提供了从负载(未示出)反射回的一部分功率。
第一端口109与第一检测电路111的输入相连，第一检测电路111产生包络反馈信号，以允许对功率器件100进行控制/线性化或功率监测。内部控制电路(未示出)或外部控制系统(未示出)可以通过输出引线112而使用来自第一检测电路111的信号。第二端口110与第二检测电路113相连，第二检测电路113对从负载反射回的部分功率进行处理，以产生偏置控制信号作为功率器件102的输入。由此，第二检测电路113用于防止晶体管102输出端的过载情况。
如图2所示，其中相同的参考数字用于图1所示的等效元件，预匹配电路104包括形成于晶体管管芯102上的各个输入端口与功率器件输入连接器103之间的多个连线。每一个连线包括通过容性元件203相连的两个感性元件201、202，例如接合线。选择每一个连线的两个感性元件201、202和容性元件203的值，以允许适合的输入阻抗匹配，这是本领域的技术人员所公知的。
尽管在晶体管管芯102的输入端口与功率器件输入连接器103之间的预匹配电路104中可以使用单一的连线，然而预匹配电路的当前实施例包括多个接线或连线(即9条连线)，以克服可能受到输入信号功率影响的电流限制，然而，预匹配电路104可以包括功率器件输入连接器103与晶体管管芯102的输入端口之间的任意数目的接线/连线，这取决于功率器件100的功率需求。
如图2所示，输出匹配电路106包括形成于晶体管管芯102的各个输出端口与电容204之间的多个连线(即9条连线)，电容204与功率器件输出连接器105相连。
图3中更加清楚地示出输出匹配电路106包括9条并联接合线301，其中每一条接合线301的一端与功率晶体管管芯102的输出金属条302相连，它用作寄生电容器，由此形成参考为地的第一电容310。多个接合线301的另一端与电容器204的金属条309相连，从而形成参考为地的第二电容311。如上所述，电容器204与功率器件输出连接器105相连。
晶体管管芯102的寄生电容310(在这个实施例中为10pF)用作模拟四分之一波长传输线的集总元件的第一电容，其中模拟四分之一波长传输线的集总元件用作输出阻抗匹配电路106。寄生电容310的顶部还用作输出阻抗匹配电路106的第一端口。
另外，与晶体管管芯102相关的安装元件(未示出)被设置在封装凸缘(未示出)上，其中封装凸缘的顶层位于接合线301之下并用作向输出信号提供返回路径的传输线的地面，然而，可以使用任意适合的接地点。
对第二电容311进行设置，以形成具有与晶体管管芯102的第一电容310近似电容值(即10pF)的电容，其中第二电容311的金属条309形成了输出阻抗匹配电路106的第二端口。
照此，对输出阻抗匹配电路106进行设置，以形成与四分之一波长(即90°)传输线等效的集总元件，在这个实施例中表示为6欧姆的特性阻抗Z0。尽管当前实施例把输出阻抗匹配电路106示出为具有等效的四分之一波长传输线，然而输出匹配电路106可以被设置为具有实质上等于90度或为90度的奇数倍的传输线。
对于当前实施例，通过0.33mm的间距提供了形成输出阻抗匹配电路106的多个接合线301之间的互感耦合，然而，可以使用任意适合的间距。
尽管上面的实施例示出使用9条并联的接合线301，然而，可以使用单一的接合线，使用单一的接合线可能限制最大传输RF功率，例如针对单一的38μm直径的金接合线来说，电流可能被限制为小于0.6A的平均电流。照此，取决于功率器件100的电流需求，可以使用任意适合数量的接合线。
与输出阻抗匹配电路106(即输出变换电路)的接合线301感性耦合的接合线303被设置为：与下文描述的其它4个电容304、305、306、307一同形成双向功率监测电路107(即双定向耦合器)。
由于双向功率监测电路107的接合线303与输出阻抗匹配电路106的接合线301之间的磁场与每一个接合线301和接合线303之间的距离的二次方成反比，所以双向功率监测电路107的接合线303与输出阻抗匹配电路106的接合线之间出现的感性耦合主要出现在紧密的接合线301、303之间。
双向功率监测电路107由接合线303形成，接合线303与作为集总元件传输线一部分的接合线301并联放置，以允许感性耦合，其中双向功率监测电路接合线303的一端被设置在第一焊盘307，而第一焊盘307被设置在与晶体管管芯102的输出端形成的金属条302相邻的位置。接合线303的另一端被设置在第二焊盘308上，而第二焊盘308被设置在与电容204的金属条309相邻的位置。第二焊盘308用作例如特性阻抗Z0为25欧姆的双向功率监测电路107的第三端口，而第一焊盘312用作例如特性阻抗Z0为25欧姆的双向功率监测电路107的第四端口。
照此，形成集总元件阻抗转换电路106的多个接合线301与双向功率监测电路107的接合线303之间的互感耦合以及相关的电容304、305、306、307导致形成了反射功率检测端口(即第三端口)和前向功率检测端口(即第四端口)。
使用位于晶体管管芯102的输出端形成的金属条302附近的第一焊盘312导致形成了4个电容器304、305、306、307中的两个电容器，第一焊盘307与晶体管输出金属条302之间的一个电容器304例如具有电容为0.98pF，而第一焊盘307与地(即参考电压)之间的第二电容器305例如具有电容为2.15pF。使用位于电容204的金属条309附近的第二焊盘308导致形成了4个电容器304、305、306、307中另外两个电容器，第二焊盘308与电容204的金属条309之间创建的一个电容器306例如具有电容为0.98pF，而第二焊盘308与地之间的另一个电容器307例如具有电容为2.15pF。
这提供了如下优点：用于监测功率元件100的提供功率和反射功率的装置具有小型化设计，而且在直接路径与反射路径之间具有高指向性。
图4示出了输出匹配电路106和双向功率监测电路107的等效电路，针对频带1.6至2.6GHz被设置为提供反射功率和直接功率之间小于22dB的隔离。
根据功率器件的输出Pout除以接合线的个数，可以估计每个单一的传输线接合线P_bw上传输的功率，即P_bw＝Pout/n。
因此，双向功率监测电路107的输出端口的功率Pcoup(即端口4)可以被估计为：
Pcoup＝Pout/n/0.5C
其中C是表示第二和第四端口之间的功率分配比的系数。
双向功率监测电路107的第三端口(也被称作隔离端口)表示从附加到功率器件输出端的负载所反射的功率部分。
如上所述，第三端口与图1所示的输出失配检测和保护电路113相连，以允许对直接和反射功率之间的失配进行测量，从而允许对晶体管的偏置进行调整以避免在失配变得过大时对晶体管管芯102造成损害。其优点是，允许快速识别功率失配，并采取预防性动作以避免损害，例如允许调整晶体管偏置或修改输出阻抗匹配电路106以改进阻抗匹配条件。
第四端口与图1所示的包络检测和反馈信号电路111相连，以允许根据第四端口所提供的信息而进行功率监测、或例如对功率器件100进行线性化，从而允许例如根据功率需求而对晶体管102的最佳功率输出进行设置。例如，在与无线电话(未示出)一同使用时，功率器件可以用于根据信号需求(例如与基站(未示出)的距离)而控制传输RF信号，从而允许对无线电话的功率需求进行最优化。同样，功率器件100可以用于其它RF传输系统中，例如基站(未示出)。
作为示例，针对上文描述的具有指定的电容和电感值的功率器件100，图5、6、7和8示出了双向功率监测电路107的典型频率响应。
图5示出了一定频率范围上的端口3和端口4处的典型插入返回损失(IRL、S11)。返回损失中存在一个焦点(focus)，示出了接合线106(第一端口的输出信号)与接合线107(从第三端口至第四端口的功率监测信号)之间恰好发生了大致期望的频率耦合。
图6示出了从端口1至端口2和端口4的功率指向性(功率晶体管输出)。可以看出，S14大于-13dB。这对应于从端口1至端口2的信号的大约5％，而且对应于第二端口处0.25dB的功率损失，这个功率损失大约是端口1处功率的6％。这个功率损失可以被接受，与耦合器有关的通常规则期望具有小于0.50dB的损失。此外它示出了这样的优点，即允许对传递至负载的功率和从负载反射的功率独立地进行控制，在前向和反射功率检测端口之间具有高指向性或隔离。当然，这是在与放大信号一同工作时的重要标准。另一点是，S14图表很宽，这意味着它可以在宽频率范围内使用，因而可以用于宽带应用。然而通常，耦合器的带宽大于放大器的带宽。
图7示出了端口3与端口4之间的典型隔离(S34)。这里存在某些频率依赖，但这是线性的且不是很强(在-28和-22dB之间)。结果，可以对返回信号和噪声进行区分。
图8示出了端口的特性阻抗与频率的关系。图5、6、7和8的x轴以GHz表示频率，而y轴表示dB。
本领域的技术人员可以理解，上面提供的电感器和电容器的值是示例性的，由此，可以使用任意适合的值以提供所需的不同RF特性。

Claims (15)

1.一种功率器件(100)，包括：
晶体管(102)；
传输线，被设置为形成晶体管(102)的输出阻抗匹配电路(106)；
定向耦合器(107)，与传输线感性耦合，以形成晶体管(102)的功率检测器，其中，定向耦合器(107)是集总元件感性电容耦合器，所述集总元件感性电容耦合器包括将晶体管(102)耦合到输出连接器(105)的多条接合线(301、303)之间的互感，以及在多条接合线和地参考之间形成的多个电容(304-307、310、311)的组合。
2.根据权利要求1所述的功率器件(100)，其中，功率检测器监测双向RF功率。
3.根据权利要求1所述的功率器件(100)，其中，传输线是模拟四分之一波长传输线的集总元件感性电容。
4.根据权利要求3所述的功率器件(100)，其中
阻抗匹配电路(106)的接合线由第一电容(310)耦合到阻抗匹配电路(106)的第一端口(302)并由第二电容(311)耦合到阻抗匹配电路(106)的第二端口(311)。
5.根据权利要求4所述的功率器件(100)，其中，定向耦合器(107)的接合线(303)由第三电容(306)和第四电容(307)耦合到阻抗匹配电路(106)的第三端口(308)并由第五电容(304)和第六电容(305)耦合到阻抗匹配电路(106)的第四端口(312)。
6.根据权利要求5所述的功率器件(100)，其中
定向耦合器(107)的第三端口(308)被设置为：提供经过传输线而传递给负载的功率的指示。
7.根据权利要求5所述的功率器件(100)，其中
定向耦合器(107)的第四端口被设置为：提供从负载耦合到传输线的反射功率的指示。
8.根据权利要求5所述的功率器件(100)，其中
第四端口(312)被设置为：提供偏置控制电路(111)的输入，以控制晶体管(102)的偏置。
9.根据权利要求4所述的功率器件(100)，其中
第一电容(310)是晶体管(102)的寄生输出电容。
10.根据权利要求1所述的功率器件(100)，其中传输线被设置为：提供工作频率上的信号的相移，该相移等于90度或为90度的奇数倍。
11.一种具有晶体管(102)的功率器件(100)的电路，所述电路包括：传输线，被设置为形成晶体管(102)的输出阻抗匹配电路；以及
定向耦合器(107)，与传输线感性耦合，以形成晶体管(102)的功率检测器，其中，定向耦合器(107)是集总元件感性电容耦合器，所述集总元件感性电容耦合器包括多条接合线(301、303)之间的互感，以及在多条接合线和地参考之间形成的多个电容(304-307、310、311)的组合。
12.一种RF传输设备，包括根据权利要求1至10中任意一项所述的功率器件(100)。
13.一种无线电话，包括根据权利要求1至10中任意一项所述的功率器件(100)。
14.一种基站，包括根据权利要求1至10中任意一项所述的功率器件(100)。
15.一种监测根据权利要求1的功率器件(100)的方法，所述方法包括：
从定向耦合器(107)提供从耦合到功率器件(100)的负载至偏置控制电路(111)的反射功率的指示，以允许对晶体管(102)的偏置进行监测。
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