JP6773256B1 - ドハティ増幅器 - Google Patents
ドハティ増幅器 Download PDFInfo
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- JP6773256B1 JP6773256B1 JP2020529218A JP2020529218A JP6773256B1 JP 6773256 B1 JP6773256 B1 JP 6773256B1 JP 2020529218 A JP2020529218 A JP 2020529218A JP 2020529218 A JP2020529218 A JP 2020529218A JP 6773256 B1 JP6773256 B1 JP 6773256B1
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Abstract
Description
図1は、実施の形態1に係るドハティ増幅器を示す回路図である。図2は、実施の形態1に係るドハティ増幅器を示すレイアウト図である。
図12は、実施の形態2に係るドハティ増幅器を示す回路図である。図13は、実施の形態2に係るドハティ増幅器を示すレイアウト図である。実施の形態1に比べて、インダクタL1,L2と容量C5,C6が追加されている。
図14は、実施の形態3に係るドハティ増幅器を示す回路図である。実施の形態2に比べて、インダクタL1,L2の接地を容量C5で共通化し、バイアス回路をバイアス回路8で共通化している。これにより、回路を小形化することができる。その他の構成及び効果は実施の形態2と同様である。
図15は、実施の形態4に係るドハティ増幅器を示す回路図である。実施の形態1に比べて、合成点Xに容量C7,C8とインダクタL3から構成される並列共振回路15が接続されている。容量C8は接地用の容量であり、動作周波数帯で十分に低いインピーダンスの容量を選択する。容量C7とインダクタL3は動作周波数の中心周波数で並列共振するように選択される。
図17は、実施の形態5に係るドハティ増幅器を示す回路図である。実施の形態1に比べて、バイアス回路8の接続位置を合成点Xに変更している。合成点Xからバイアス回路8のインピーダンスを見ると、実施の形態4の並列共振回路と同様の周波数特性を示す。そのため、ドレインパッド5から合成点Xまでの90度遅延回路の周波数特性と逆の極性を持つため、回路の周波数特性が軽減される。従って、実施の形態4と同様の効果が得られ、かつ実施の形態4における並列共振回路を削除して小形化が可能である。なお、本実施の形態は実施の形態2の構成と組み合わせ可能である。
Claims (8)
- 第1のドレインパッドを持つ第1のトランジスタチップと、
第2のドレインパッドを持つ第2のトランジスタチップと、
樹脂基板と、
前記樹脂基板に形成された伝送線路と、
前記樹脂基板に形成された第1の容量と、
前記第1のドレインパッドと前記伝送線路の一端を接続する第1のボンディングワイヤと、
前記第2のドレインパッドと前記第1の容量の一端を接続する第2のボンディングワイヤと、
前記伝送線路の他端及び前記第1の容量の他端に接続された出力端子とを備え、
前記第1のトランジスタチップのソース−ドレイン間の寄生容量と、前記第2のトランジスタチップのソース−ドレイン間の寄生容量と、前記伝送線路と、前記第1のボンディングワイヤは、等価的に90度遅延回路を構成し、
前記第1の容量の容量値は、前記第2のボンディングワイヤのインダクタンスと共振するように選択されていることを特徴とするドハティ増幅器。 - 前記第1の容量と前記第2のボンディングワイヤの共振周波数は、前記ドハティ増幅器の動作周波数の中心周波数の±30%の範囲内であることを特徴とする請求項1に記載のドハティ増幅器。
- 前記伝送線路の一端に接続された第1のバイアス回路と、
前記第1の容量の一端に接続された第2のバイアス回路とを更に備えることを特徴とする請求項1又は2に記載のドハティ増幅器。 - 一端が前記第1のボンディングワイヤと前記伝送線路の接続点に接続され、他端が第2の容量を介して接地された第1のインダクタと、
一端が前記第2のボンディングワイヤと前記第1の容量の接続点に接続され、他端が第3の容量を介して接地された第2のインダクタとを更に備え、
前記第1のインダクタは、動作周波数において前記第1のトランジスタチップのソース−ドレイン間の寄生容量と並列共振するインダクタンスより大きいインダクタンスを有し、
前記第2のインダクタは、前記動作周波数において前記第2のトランジスタチップのソース−ドレイン間の寄生容量と並列共振するインダクタンスより大きいインダクタンスを有し、
前記第1のインダクタ及び前記第2のインダクタは、前記第1のトランジスタチップのソース−ドレイン間の寄生容量と、前記第2のトランジスタチップのソース−ドレイン間の寄生容量と、前記伝送線路と、前記第1のボンディングワイヤと共に、前記90度遅延回路を構成することを特徴とする請求項1又は2に記載のドハティ増幅器。 - 前記第1のインダクタの他端に接続された第1のバイアス回路と、
前記第2のインダクタの他端に接続された第2のバイアス回路とを更に備えることを特徴とする請求項4に記載のドハティ増幅器。 - 一端が前記第1のボンディングワイヤと前記伝送線路の接続点に接続され、他端が第2の容量を介して接地された第1のインダクタと、
一端が前記第2のボンディングワイヤと前記第1の容量の接続点に接続され、他端が前記第2の容量を介して接地された第2のインダクタと、
前記第1のインダクタの他端と前記第2のインダクタの他端に接続されたバイアス回路とを更に備え、
前記第1のインダクタは、動作周波数において前記第1のトランジスタチップのソース−ドレイン間の寄生容量と並列共振するインダクタンスより大きいインダクタンスを有し、
前記第2のインダクタは、前記動作周波数において前記第2のトランジスタチップのソース−ドレイン間の寄生容量と並列共振するインダクタンスより大きいインダクタンスを有し、
前記第1のインダクタ及び前記第2のインダクタは、前記第1のトランジスタチップのソース−ドレイン間の寄生容量と、前記第2のトランジスタチップのソース−ドレイン間の寄生容量と、前記伝送線路と、前記第1のボンディングワイヤと共に、前記90度遅延回路を構成することを特徴とする請求項1又は2に記載のドハティ増幅器。 - 前記伝送線路の他端及び前記第1の容量の他端と接地点との間に接続され、前記ドハティ増幅器の動作周波数の中心周波数で並列共振する並列共振回路を更に備えることを特徴とする請求項1〜6の何れか1項に記載のドハティ増幅器。
- 前記伝送線路の他端及び前記第1の容量の他端に接続された第1のバイアス回路と、
前記第1の容量の一端に接続された第2のバイアス回路とを更に備えることを特徴とする請求項1又は2に記載のドハティ増幅器。
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JP2009539277A (ja) * | 2006-04-26 | 2009-11-12 | エヌエックスピー ビー ヴィ | 高出力集積rf増幅器 |
US20130076446A1 (en) * | 2011-09-27 | 2013-03-28 | Infineon Technologies North American Corp. | Rf device with compensatory resonator matching topology |
WO2016203512A1 (ja) * | 2015-06-15 | 2016-12-22 | 株式会社日立国際電気 | 電力増幅器及び無線送信器 |
JP2018074320A (ja) * | 2016-10-27 | 2018-05-10 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ドハティ型増幅器 |
KR101910896B1 (ko) * | 2017-06-27 | 2018-10-23 | 성균관대학교 산학협력단 | 피킹 증폭기의 출력 정합회로에 공진회로를 사용하는 광대역 도허티 전력증폭기 |
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CN105874706B (zh) | 2014-01-06 | 2020-03-20 | 华为技术有限公司 | 陶赫蒂Doherty功率放大器、通信设备及系统 |
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JP2009539277A (ja) * | 2006-04-26 | 2009-11-12 | エヌエックスピー ビー ヴィ | 高出力集積rf増幅器 |
US20130076446A1 (en) * | 2011-09-27 | 2013-03-28 | Infineon Technologies North American Corp. | Rf device with compensatory resonator matching topology |
WO2016203512A1 (ja) * | 2015-06-15 | 2016-12-22 | 株式会社日立国際電気 | 電力増幅器及び無線送信器 |
JP2018074320A (ja) * | 2016-10-27 | 2018-05-10 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | ドハティ型増幅器 |
KR101910896B1 (ko) * | 2017-06-27 | 2018-10-23 | 성균관대학교 산학협력단 | 피킹 증폭기의 출력 정합회로에 공진회로를 사용하는 광대역 도허티 전력증폭기 |
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JPWO2021100176A1 (ja) | 2021-12-02 |
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