ATE350767T1 - Leistungstransistoranordnung höher frequenz - Google Patents

Leistungstransistoranordnung höher frequenz

Info

Publication number
ATE350767T1
ATE350767T1 AT99960588T AT99960588T ATE350767T1 AT E350767 T1 ATE350767 T1 AT E350767T1 AT 99960588 T AT99960588 T AT 99960588T AT 99960588 T AT99960588 T AT 99960588T AT E350767 T1 ATE350767 T1 AT E350767T1
Authority
AT
Austria
Prior art keywords
output
conductors
coupled
terminal
conductive island
Prior art date
Application number
AT99960588T
Other languages
English (en)
Inventor
Cynthia Blair
Timothy Ballard
James Curtis
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE350767T1 publication Critical patent/ATE350767T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Microwave Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT99960588T 1998-12-02 1999-11-23 Leistungstransistoranordnung höher frequenz ATE350767T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/204,666 US6177834B1 (en) 1998-12-02 1998-12-02 Output matched LDMOS power transistor device

Publications (1)

Publication Number Publication Date
ATE350767T1 true ATE350767T1 (de) 2007-01-15

Family

ID=22758908

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99960588T ATE350767T1 (de) 1998-12-02 1999-11-23 Leistungstransistoranordnung höher frequenz

Country Status (11)

Country Link
US (1) US6177834B1 (de)
EP (1) EP1145314B1 (de)
JP (1) JP2002531948A (de)
KR (1) KR20010080542A (de)
CN (1) CN1211858C (de)
AT (1) ATE350767T1 (de)
AU (1) AU1745100A (de)
CA (1) CA2353473A1 (de)
DE (1) DE69934717T2 (de)
HK (1) HK1043248A1 (de)
WO (1) WO2000033378A1 (de)

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JP4663049B2 (ja) * 1999-07-29 2011-03-30 三菱電機株式会社 電界効果トランジスタ、該電界効果トランジスタを含むモノリシックマイクロ波集積回路、及び設計方法
US6649975B2 (en) 2000-11-16 2003-11-18 Silicon Semiconductor Corporation Vertical power devices having trench-based electrodes therein
US6583673B2 (en) * 2001-02-26 2003-06-24 Infineon Technologies Ag Stability enhanced multistage power amplifier
DE10112414A1 (de) * 2001-03-15 2002-10-02 Infineon Technologies Ag Schaltungsanordnung mit einem induktiven oder kapazitiven Bauelement und Verwendung von Anschlussbeinen eines Halbleitergehäuses als induktive oder kapazitive Bauelemente
US6674157B2 (en) 2001-11-02 2004-01-06 Fairchild Semiconductor Corporation Semiconductor package comprising vertical power transistor
US6566749B1 (en) 2002-01-15 2003-05-20 Fairchild Semiconductor Corporation Semiconductor die package with improved thermal and electrical performance
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
US20040150489A1 (en) * 2003-02-05 2004-08-05 Sirenza Microdevices, Inc On-carrier impedance transform network
US6946706B1 (en) 2003-07-09 2005-09-20 National Semiconductor Corporation LDMOS transistor structure for improving hot carrier reliability
EP1831995B1 (de) * 2004-12-21 2013-05-29 Nxp B.V. Elektrisches gerät und verfahren zur steuerung eines elektrischen gerätes
US7564303B2 (en) * 2005-07-26 2009-07-21 Infineon Technologies Ag Semiconductor power device and RF signal amplifier
US7372334B2 (en) * 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7961470B2 (en) * 2006-07-19 2011-06-14 Infineon Technologies Ag Power amplifier
US9741673B2 (en) * 2007-06-22 2017-08-22 Cree, Inc. RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features
US8110932B2 (en) * 2007-10-12 2012-02-07 Infineon Technologies Ag Semiconductor circuit with amplifier, bond wires and inductance compensating bond wire
EP2600525A3 (de) * 2009-04-30 2014-04-09 Freescale Semiconductor, Inc. Drahtlose Kommunikationsvorrichtung und Halbleitergehäusevorrichtung mit einem dafür vorgesehenen Leistungsverstärker
WO2010125431A1 (en) * 2009-04-30 2010-11-04 Freescale Semiconductor, Inc. Wireless communication device and semiconductor package device having a power amplifier therefor
DE102010009984A1 (de) 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
US7939864B1 (en) * 2010-06-01 2011-05-10 Nxp B.V. Inductive bond-wire circuit
US8410853B2 (en) 2010-06-01 2013-04-02 Nxp B.V. Inductive circuit arrangement
KR101770046B1 (ko) * 2012-06-29 2017-08-21 크리, 인코포레이티드 고주파수 안정화 특징들을 가지는 ｒｆ 트랜지스터 패키지들 및 고주파수 안정화 특징들을 가지는 ｒｆ 트랜지스터 패키지들의 형성 방법들
US9312817B2 (en) * 2012-07-20 2016-04-12 Freescale Semiconductor, Inc. Semiconductor package design providing reduced electromagnetic coupling between circuit components
JP6164721B2 (ja) * 2012-11-09 2017-07-19 住友電工デバイス・イノベーション株式会社 半導体装置
US8736379B1 (en) * 2013-02-08 2014-05-27 Infineon Technologies Ag Input match network for a power circuit
US9373577B2 (en) 2013-05-21 2016-06-21 Infineon Technologies Ag Hybrid semiconductor package
US9240390B2 (en) 2013-06-27 2016-01-19 Freescale Semiconductor, Inc. Semiconductor packages having wire bond wall to reduce coupling
KR101601829B1 (ko) * 2014-08-25 2016-03-10 알에프에이치아이씨 주식회사 고출력 반도체 소자 패키지
CN106470014B (zh) 2015-08-17 2019-10-18 恩智浦美国有限公司 具有谐波防止电路的输出阻抗匹配网络
US10110185B2 (en) 2016-09-16 2018-10-23 Kabushiki Kaisha Toshiba Microwave semiconductor device
JP7136524B2 (ja) * 2018-07-11 2022-09-13 住友電工デバイス・イノベーション株式会社 半導体増幅器

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EP0015709B1 (de) 1979-03-10 1984-05-23 Fujitsu Limited Konstruktive Anordnung für Halbleitervorrichtungen
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US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back

Also Published As

Publication number Publication date
HK1043248A1 (zh) 2002-09-06
DE69934717D1 (de) 2007-02-15
DE69934717T2 (de) 2007-10-18
CN1211858C (zh) 2005-07-20
US6177834B1 (en) 2001-01-23
AU1745100A (en) 2000-06-19
WO2000033378A1 (en) 2000-06-08
JP2002531948A (ja) 2002-09-24
EP1145314B1 (de) 2007-01-03
KR20010080542A (ko) 2001-08-22
EP1145314A1 (de) 2001-10-17
CN1329754A (zh) 2002-01-02
CA2353473A1 (en) 2000-06-08

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