JP2014096497A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2014096497A JP2014096497A JP2012247764A JP2012247764A JP2014096497A JP 2014096497 A JP2014096497 A JP 2014096497A JP 2012247764 A JP2012247764 A JP 2012247764A JP 2012247764 A JP2012247764 A JP 2012247764A JP 2014096497 A JP2014096497 A JP 2014096497A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 230000001939 inductive effect Effects 0.000 abstract description 17
- 239000003990 capacitor Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
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- 230000007423 decrease Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
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Abstract
【解決手段】本発明は、複数の出力パッド18aを有する半導体チップ18と、誘導性パターン24bを有するフィードスルー24と、配線パターン20bを有する配線部品20と、それぞれの一端が出力パッド18aと接続され、それぞれの他端が誘導性パターン24bの長手方向に対して分散して接続されたボンディングワイヤ32と、配線部品20の一部領域20cと誘導性パターン24bとの間を接続するボンディングワイヤ34と、配線部品20に接続された容量性部品22と、を備える半導体装置である。
【選択図】図1
Description
キャパシタC2a及びC2bのキャパシタンス値:100pF以上
抵抗R1の抵抗値:50Ω
14、24 フィードスルー
18 半導体チップ
18a 出力パッド
20 配線部品
20b 配線パターン
20c 一部領域
22 容量性部品
26 出力端子
28、30、31、32、34、36 ボンディングワイヤ
100、200、300、400 半導体装置
Claims (10)
- 複数の出力パッドを有する半導体チップと、
導電性のパターンを有する出力端子部品と、
導電性のパターンを有する配線部品と、
それぞれの一端が前記出力パッドと接続され、それぞれの他端が前記出力端子部品の前記パターンの長手方向に対して分散して接続された第1ボンディングワイヤと、
前記配線部品の一部領域と前記出力端子部品の前記パターンとの間を接続する接続部と、
前記配線部品に接続された容量性部品と、を備えることを特徴とする半導体装置。 - 前記配線部品は、前記半導体チップと前記出力端子部品との間に配置され、その長手方向が、前記配線部品と前記半導体チップとが配置されている方向と交叉する方向に延在してなることを特徴とする請求項1記載の半導体装置。
- 前記出力端子部品の前記パターンの幅は、前記配線部品の前記パターンの幅より大きいことを特徴とする請求項1又は2記載の反相対装置。
- 前記半導体チップと前記出力端子部品との間隔は、前記出力端子部品の幅よりも小さいことを特徴とする請求項1記載の半導体装置。
- 前記容量性部品は、前記配線部品の長手方向に配置されてなることを特徴とする請求項2記載の半導体装置。
- 前記接続部は、第2ボンディングワイヤからなることを特徴とする請求項1記載の半導体装置。
- 前記配線部品の一部領域は、前記配線部品の前記パターンの総延長の40%以下の領域であることを特徴とする請求項1記載の半導体装置。
- 前記出力端子部品の前記パターンの長手方向における幅は、前記配線部品の前記パターンの長手方向における幅より3倍以上大きいことを特徴とする請求項1記載の半導体装置。
- 前記容量性部品は、前記半導体チップの温度特性の変化を補償する温度特性を有することを特徴とする請求項1記載の半導体装置。
- 前記半導体チップが搭載されるパッケージを備え、
前記パッケージはハーメチックパッケージであることを特徴とする請求項1記載の半導体装置。
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JP2012247764A JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
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---|---|---|---|
JP2012247764A JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2014096497A true JP2014096497A (ja) | 2014-05-22 |
JP2014096497A5 JP2014096497A5 (ja) | 2015-12-24 |
JP6164721B2 JP6164721B2 (ja) | 2017-07-19 |
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JP2012247764A Active JP6164721B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6316512B1 (ja) * | 2017-03-28 | 2018-04-25 | 三菱電機株式会社 | 半導体装置 |
KR101878557B1 (ko) * | 2015-09-16 | 2018-07-13 | 미쓰비시덴키 가부시키가이샤 | 증폭기 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134976A (en) * | 1978-04-12 | 1979-10-19 | Nec Corp | High-frequency transistor |
JPS5648156A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Transistor |
JPS5877052U (ja) * | 1981-11-17 | 1983-05-24 | 株式会社東芝 | トランジスタ外囲器 |
JP2002531948A (ja) * | 1998-12-02 | 2002-09-24 | エリクソン インコーポレイテッド | 高周波パワー・トランジスタ・デバイス |
JP2003115732A (ja) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | 半導体装置 |
US6734728B1 (en) * | 2002-12-19 | 2004-05-11 | Infineon Technologies North America Corp. | RF power transistor with internal bias feed |
JP2005110119A (ja) * | 2003-10-01 | 2005-04-21 | Mitsubishi Electric Corp | 高周波トランジスタ装置 |
-
2012
- 2012-11-09 JP JP2012247764A patent/JP6164721B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54134976A (en) * | 1978-04-12 | 1979-10-19 | Nec Corp | High-frequency transistor |
JPS5648156A (en) * | 1979-09-26 | 1981-05-01 | Nec Corp | Transistor |
JPS5877052U (ja) * | 1981-11-17 | 1983-05-24 | 株式会社東芝 | トランジスタ外囲器 |
JP2002531948A (ja) * | 1998-12-02 | 2002-09-24 | エリクソン インコーポレイテッド | 高周波パワー・トランジスタ・デバイス |
JP2003115732A (ja) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | 半導体装置 |
US6734728B1 (en) * | 2002-12-19 | 2004-05-11 | Infineon Technologies North America Corp. | RF power transistor with internal bias feed |
JP2005110119A (ja) * | 2003-10-01 | 2005-04-21 | Mitsubishi Electric Corp | 高周波トランジスタ装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101878557B1 (ko) * | 2015-09-16 | 2018-07-13 | 미쓰비시덴키 가부시키가이샤 | 증폭기 |
JP6316512B1 (ja) * | 2017-03-28 | 2018-04-25 | 三菱電機株式会社 | 半導体装置 |
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