JPS54134976A - High-frequency transistor - Google Patents

High-frequency transistor

Info

Publication number
JPS54134976A
JPS54134976A JP4359678A JP4359678A JPS54134976A JP S54134976 A JPS54134976 A JP S54134976A JP 4359678 A JP4359678 A JP 4359678A JP 4359678 A JP4359678 A JP 4359678A JP S54134976 A JPS54134976 A JP S54134976A
Authority
JP
Japan
Prior art keywords
electrostatic capacity
inductance
series
parallel
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4359678A
Other languages
Japanese (ja)
Other versions
JPS6364081B2 (en
Inventor
Naofumi Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4359678A priority Critical patent/JPS54134976A/en
Publication of JPS54134976A publication Critical patent/JPS54134976A/en
Publication of JPS6364081B2 publication Critical patent/JPS6364081B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To expand the limits of a frequency band with impedance matching made excellent by canceling an inductive impedance component of a transistor chip by an electrostatic capacity connected in series. CONSTITUTION:In addition to parallel-connected electrostatic capacity 5 constituting a high-frequency and high-output transistor, series-connected electrostatic capacity 9 and inductance 10 connected in parallel to it are both provided newly. At this time, the impendance value of inductance 10 is set much larger than that of electrostatic capacity 9 so as to allow inductance 10 serve as a choke. In this way, earth inductance component 2 of the transistor chip and inductance 3 of the bonding wire are canceled by electrostatic capacity 9. Further, operation Q of the circuit can be selected freely by the value of electrostatic capacity 9, so that extremely- wide band characteristics can be obtained.
JP4359678A 1978-04-12 1978-04-12 High-frequency transistor Granted JPS54134976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4359678A JPS54134976A (en) 1978-04-12 1978-04-12 High-frequency transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4359678A JPS54134976A (en) 1978-04-12 1978-04-12 High-frequency transistor

Publications (2)

Publication Number Publication Date
JPS54134976A true JPS54134976A (en) 1979-10-19
JPS6364081B2 JPS6364081B2 (en) 1988-12-09

Family

ID=12668176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4359678A Granted JPS54134976A (en) 1978-04-12 1978-04-12 High-frequency transistor

Country Status (1)

Country Link
JP (1) JPS54134976A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282908A (en) * 1991-03-12 1992-10-08 Matsushita Electric Ind Co Ltd High pass filter and multi-stage amplifier using the filter
JPH05327371A (en) * 1992-05-15 1993-12-10 Mitsubishi Electric Corp Fet amplifier
JP2014096497A (en) * 2012-11-09 2014-05-22 Sumitomo Electric Device Innovations Inc Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0395993A (en) * 1989-09-07 1991-04-22 Matsushita Electric Ind Co Ltd Front panel mounting structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273676A (en) * 1975-12-15 1977-06-20 Nec Corp High output transistor device for high frequency
JPS52127732A (en) * 1976-04-19 1977-10-26 Nec Corp High output transistor unit for high frequency

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273676A (en) * 1975-12-15 1977-06-20 Nec Corp High output transistor device for high frequency
JPS52127732A (en) * 1976-04-19 1977-10-26 Nec Corp High output transistor unit for high frequency

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04282908A (en) * 1991-03-12 1992-10-08 Matsushita Electric Ind Co Ltd High pass filter and multi-stage amplifier using the filter
JPH05327371A (en) * 1992-05-15 1993-12-10 Mitsubishi Electric Corp Fet amplifier
JP2014096497A (en) * 2012-11-09 2014-05-22 Sumitomo Electric Device Innovations Inc Semiconductor device

Also Published As

Publication number Publication date
JPS6364081B2 (en) 1988-12-09

Similar Documents

Publication Publication Date Title
JPS54134976A (en) High-frequency transistor
GB803186A (en) Negative-impedance transistor oscillator
JPS56711A (en) Antenna unit
EP0404404A3 (en) Crystal oscillator with broad tuning capability
GB1166122A (en) Improvements in or relating to resonant circuits for UHF
JPS5754414A (en) Attenuator circuit
JPS56157261A (en) Power source
SE320705B (en)
SU811437A1 (en) Ripple filter
JPS56110406A (en) Filter device for electric vehicle
JPS5595495A (en) Speaker
JPS56713A (en) Antenna unit
JPS51136133A (en) High frequency inverter
JPS55123204A (en) Oscillation output unit
JPS5675713A (en) Parametric amplifier
JPS5586208A (en) Microwave transistor circuit
SU1175015A1 (en) Frequency selection device
JPS5555607A (en) Parametric amplifier
JPS54146908A (en) High frequency amplifier circuit
JPS536017A (en) Speaker device
JPS5365041A (en) Active two terminal impedance circuit
JPS5733841A (en) Antenna inputting circuit
SU502479A1 (en) Amplifier
JPS6424616A (en) Power output transistor high frequency high
JPS5675719A (en) Delay circuit for broad band