CN100380661C - 分栅式功率模块以及用于抑制其中振荡的方法 - Google Patents

分栅式功率模块以及用于抑制其中振荡的方法 Download PDF

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CN100380661C
CN100380661C CNB03802909XA CN03802909A CN100380661C CN 100380661 C CN100380661 C CN 100380661C CN B03802909X A CNB03802909X A CN B03802909XA CN 03802909 A CN03802909 A CN 03802909A CN 100380661 C CN100380661 C CN 100380661C
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grid
array
tube core
area
substrate
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CN1625807A (zh
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理查德·B·弗雷
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Microsemi Corp Power Products Group
Microsemi Corp
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Microsemi Corp
Advanced Power Technology Inc
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    • H01L2924/30Technical effects
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    • H01L2924/30105Capacitance
    • HELECTRICITY
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    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
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    • H01L2924/3011Impedance
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  • Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
CNB03802909XA 2002-01-29 2003-01-27 分栅式功率模块以及用于抑制其中振荡的方法 Expired - Fee Related CN100380661C (zh)

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GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
US8581660B1 (en) * 2012-04-24 2013-11-12 Texas Instruments Incorporated Power transistor partial current sensing for high precision applications
CN104380463B (zh) * 2012-06-19 2017-05-10 Abb 技术有限公司 用于将多个功率晶体管安装在其上的衬底和功率半导体模块
DE102014111931B4 (de) * 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
JP7153649B2 (ja) 2016-12-16 2022-10-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト ゲートパスインダクタンスが低いパワー半導体モジュール
JP6838243B2 (ja) * 2017-09-29 2021-03-03 日立Astemo株式会社 電力変換装置
DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019112935B4 (de) 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul
DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
EP4102559A1 (en) 2021-06-10 2022-12-14 Hitachi Energy Switzerland AG Power semiconductor module
DE102022134657A1 (de) 2022-12-22 2024-06-27 Valeo Eautomotive Germany Gmbh Leistungsmodul, elektrischer Leistungswandler und elektrischer Antrieb für ein Transportmittel

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US20030141587A1 (en) 2003-07-31
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ATE339013T1 (de) 2006-09-15
US6939743B2 (en) 2005-09-06
WO2003065454A3 (en) 2004-02-26
CN1625807A (zh) 2005-06-08
EP1470588B1 (en) 2006-09-06
US20050218500A1 (en) 2005-10-06
EP1470588A2 (en) 2004-10-27
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