DE60308148T2 - Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin - Google Patents

Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin Download PDF

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DE60308148T2
DE60308148T2 DE60308148T DE60308148T DE60308148T2 DE 60308148 T2 DE60308148 T2 DE 60308148T2 DE 60308148 T DE60308148 T DE 60308148T DE 60308148 T DE60308148 T DE 60308148T DE 60308148 T2 DE60308148 T2 DE 60308148T2
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gate
substrate
region
array
frequency
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DE60308148T
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DE60308148D1 (de
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B. Richard Bend FREY
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Microsemi Corp
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Advanced Power Technology Inc
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30105Capacitance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • H01L2924/30111Impedance matching

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Current-Collector Devices For Electrically Propelled Vehicles (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
DE60308148T 2002-01-29 2003-01-27 Leistungsmodul mit geteiltem gatter und methode zur unterdrückung von schwingungen darin Expired - Fee Related DE60308148T2 (de)

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PCT/US2003/002326 WO2003065454A2 (en) 2002-01-29 2003-01-27 Split-gate power module and method for suppressing oscillation therein

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DE102019112936A1 (de) 2019-05-16 2020-11-19 Danfoss Silicon Power Gmbh Halbleitermodul
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DE102019114040A1 (de) 2019-05-26 2020-11-26 Danfoss Silicon Power Gmbh Dreistufiges Leistungsmodul
JP6772355B1 (ja) 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP7484156B2 (ja) 2019-12-18 2024-05-16 富士電機株式会社 半導体装置
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US20030141587A1 (en) 2003-07-31
DE60308148D1 (de) 2006-10-19
ATE339013T1 (de) 2006-09-15
US6939743B2 (en) 2005-09-06
WO2003065454A3 (en) 2004-02-26
CN100380661C (zh) 2008-04-09
CN1625807A (zh) 2005-06-08
EP1470588B1 (en) 2006-09-06
US20050218500A1 (en) 2005-10-06
EP1470588A2 (en) 2004-10-27
KR20040085169A (ko) 2004-10-07
JP4732692B2 (ja) 2011-07-27
JP2006502560A (ja) 2006-01-19
US7342262B2 (en) 2008-03-11
WO2003065454A2 (en) 2003-08-07

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