JP2006501366A - プラズマ強化プロセスにおいてウェブ材料を処理するための装置 - Google Patents
プラズマ強化プロセスにおいてウェブ材料を処理するための装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002826 coolant Substances 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 229920006254 polymer film Polymers 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
該回転ドラムは、その円周面の部分に接しているウェブ材料を支持しかつ搬送するために備え付けられ、さらに、プラズマが閉じ込められる電極の対のうちの1つとして機能するよう備え付けられる。当該装置はさらに、真空チャンバ内にマグネトロン機能のために備え付けられる複数のさらなる電極を含む。すなわち、装置は、プラズマを維持するのに適した交流電界を確立するための手段と、帯電させた粒子、特に電子を少なくとも部分的にプラズマに閉じ込めるのに好適な磁界を設定するための手段とを含む。マグネトロン電極はドラムとともにドラムの円周面の部分に沿って空間を形成するよう配置され、ウェブが、ドラムの円周面上に位置したままでこの空間を通って搬送される。
、たとえば、予備の洗浄またはエッチングステップ、以下のコーティングステップ、および所望の湿潤性を有するコーティング表面を作り出すための最終的なステップである。
Claims (12)
- プラズマ強化プロセスにおいてウェブ材料を処理するための装置であって、前記装置は真空チャンバ(1)を含み、前記真空チャンバ(1)は、前記チャンバ(1)内に配置され前記チャンバ(1)内で一定の減圧を維持するための手段(2)を備え、前記装置はさらに、ウェブ支持および搬送手段と、前記支持および搬送手段によって支持および搬送されるウェブ(4)に面するマグネトロン手段と、前記支持および搬送手段と前記マグネトロン手段との間の空間(10)にプロセスガスまたはプロセスガス混合物を供給するためのガス供給手段とを含み、
前記マグネトロン手段は長方形のマグネトロン面を備えた複数の独立したマグネトロン電極(6)を含み、各マグネトロン電極(6)はそれ自体の電源手段(7)によって交流電圧が供給され、前記マグネトロン面は互いに並んで平行に前記支持および搬送手段から離れて配置され、前記支持および搬送手段は電気的に接地されるか、電気的に浮遊するかまたは負にバイアスがかけられることを特徴とする、装置。 - 前記支持および搬送手段は回転ドラム(3)であり、前記マグネトロン面は、それらの長さがドラム軸に対して平行になり、それらの幅がドラム円周面に対して実質的に接線方向になるように配置されることを特徴とする、請求項1に記載の装置。
- 前記ガス供給手段は、隣り合うマグネトロン面の間に延在するガス供給線(8、8′)を含むことを特徴とする、請求項1または2に記載の装置。
- 前記ガス供給手段は、前記マグネトロン面内に延在し、前記マグネトロン面の長さに対して平行なガス供給線(8、8′)を含むことを特徴とする、請求項1または2に記載の装置。
- 前記供給線(8、8′)は、前記マグネトロン面に対して実質的に垂直に、または前記マグネトロン面に対して実質的に平行にガスを注入するよう配置されるガス出口の列を含むことを特徴とする、請求項3または4に記載の装置。
- 前記マグネトロン面の長手方向の縁に沿って前記支持および搬送手段に向かって延在する壁要素(20)が設けられることを特徴とする、請求項4または5に記載の装置。
- 前記マグネトロン電極(6)が対のマグネトロンを構成することを特徴とする、請求項4から6のいずれかに記載の装置。
- マグネトロン面と前記支持および搬送手段との間における前記空間(10)に供給される前記ガスが、軸方向に、および/または隣り合うマグネトロン面の間に除去可能であることを特徴とする、請求項1から7のいずれかに記載の装置。
- 前記マグネトロン面は、前記マグネトロン面を構成する前記磁極に亘って延在する非磁性材料の電極部(34)を含むことを特徴とする、請求項1から8のいずれかに記載の装置。
- 前記マグネトロン面の前記電極部(34)はチャネル(35)を含み、前記チャネル(35)は、前記チャネル(35)を通じて冷却媒体を循環させるための手段に接続されることを特徴とする、請求項9に記載の装置。
- 前記マグネトロン電極(6)は不平衡なタイプのマグネトロンを構成することを特徴とする、請求項1から10のいずれかに記載の装置。
- 前記マグネトロン面は永久磁石の中央極および周辺極(30および31)を含み、前記中央極(30)は前記周辺極(31)の約半分の磁力を有することを特徴とする、請求項11に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01652/02A CH696013A5 (de) | 2002-10-03 | 2002-10-03 | Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess. |
PCT/CH2003/000609 WO2004032175A1 (de) | 2002-10-03 | 2003-09-09 | Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006501366A true JP2006501366A (ja) | 2006-01-12 |
JP4585860B2 JP4585860B2 (ja) | 2010-11-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004540443A Expired - Fee Related JP4585860B2 (ja) | 2002-10-03 | 2003-09-09 | プラズマ強化プロセスにおいてウェブ材料を処理するための装置および方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7806981B2 (ja) |
EP (1) | EP1547124B1 (ja) |
JP (1) | JP4585860B2 (ja) |
KR (1) | KR100977892B1 (ja) |
CN (1) | CN100466154C (ja) |
AU (1) | AU2003257359A1 (ja) |
BR (1) | BR0315010A (ja) |
CH (1) | CH696013A5 (ja) |
DE (1) | DE50303504D1 (ja) |
MX (1) | MXPA05003539A (ja) |
WO (1) | WO2004032175A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014058723A (ja) * | 2012-09-18 | 2014-04-03 | Lintec Corp | イオン注入装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5095087B2 (ja) * | 2005-04-21 | 2012-12-12 | 大日本印刷株式会社 | 成膜装置及び成膜方法 |
JP4558810B2 (ja) * | 2008-02-29 | 2010-10-06 | 富士フイルム株式会社 | 成膜装置 |
DE202008006477U1 (de) * | 2008-05-06 | 2008-07-24 | Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden | Vorrichtung zur Modifizierung von Substratoberflächen |
US20120164353A1 (en) * | 2009-09-05 | 2012-06-28 | John Madocks | Plasma enhanced chemical vapor deposition apparatus |
JP5270505B2 (ja) * | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
JP6474546B2 (ja) * | 2011-12-28 | 2019-02-27 | 大日本印刷株式会社 | プラズマを使った前処理装置を有した蒸着装置 |
JP5958092B2 (ja) * | 2012-05-31 | 2016-07-27 | ソニー株式会社 | 成膜装置及び成膜方法 |
EP2762607B1 (en) * | 2013-01-31 | 2018-07-25 | Applied Materials, Inc. | Deposition source with adjustable electrode |
EP3054032B1 (en) | 2015-02-09 | 2017-08-23 | Coating Plasma Industrie | Installation for film deposition onto and/or modification of the surface of a moving substrate |
WO2017005554A1 (en) | 2015-07-03 | 2017-01-12 | Tetra Laval Holdings & Finance S.A. | Device for the treatment of a web substrate in a plasma enhanced process |
RU2726132C2 (ru) | 2015-10-29 | 2020-07-09 | Тетра Лаваль Холдингз Энд Файнэнс С.А. | Ламинированный упаковочный материал, содержащий барьерную пленку, и произведенные из него упаковочные контейнеры |
ES2908728T3 (es) | 2017-04-28 | 2022-05-03 | Tetra Laval Holdings & Finance | Material de envasado laminado que comprende una película de barrera |
JP7342702B2 (ja) * | 2017-06-30 | 2023-09-12 | 凸版印刷株式会社 | フィルムの処理方法及びフィルムの製造方法 |
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2002
- 2002-10-03 CH CH01652/02A patent/CH696013A5/de not_active IP Right Cessation
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2003
- 2003-09-09 BR BR0315010-0A patent/BR0315010A/pt not_active IP Right Cessation
- 2003-09-09 MX MXPA05003539A patent/MXPA05003539A/es active IP Right Grant
- 2003-09-09 WO PCT/CH2003/000609 patent/WO2004032175A1/de active IP Right Grant
- 2003-09-09 EP EP03798846A patent/EP1547124B1/de not_active Expired - Lifetime
- 2003-09-09 DE DE50303504T patent/DE50303504D1/de not_active Expired - Lifetime
- 2003-09-09 KR KR1020057005705A patent/KR100977892B1/ko active IP Right Grant
- 2003-09-09 CN CNB038235994A patent/CN100466154C/zh not_active Expired - Fee Related
- 2003-09-09 AU AU2003257359A patent/AU2003257359A1/en not_active Abandoned
- 2003-09-09 JP JP2004540443A patent/JP4585860B2/ja not_active Expired - Fee Related
- 2003-09-09 US US10/529,533 patent/US7806981B2/en not_active Expired - Fee Related
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JPS6283471A (ja) * | 1985-10-09 | 1987-04-16 | Hitachi Ltd | 炭素皮膜形成方法及び装置 |
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JP2014058723A (ja) * | 2012-09-18 | 2014-04-03 | Lintec Corp | イオン注入装置 |
Also Published As
Publication number | Publication date |
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WO2004032175A1 (de) | 2004-04-15 |
DE50303504D1 (de) | 2006-06-29 |
BR0315010A (pt) | 2005-08-09 |
MXPA05003539A (es) | 2005-06-03 |
KR100977892B1 (ko) | 2010-08-24 |
US20060150908A1 (en) | 2006-07-13 |
JP4585860B2 (ja) | 2010-11-24 |
US7806981B2 (en) | 2010-10-05 |
CN100466154C (zh) | 2009-03-04 |
AU2003257359A1 (en) | 2004-04-23 |
EP1547124B1 (de) | 2006-05-24 |
KR20050065572A (ko) | 2005-06-29 |
CN1689133A (zh) | 2005-10-26 |
EP1547124A1 (de) | 2005-06-29 |
CH696013A5 (de) | 2006-11-15 |
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