BR0315010A - Dispositivo para tratar material em folha contìnua em um processo acentuado com plasma - Google Patents
Dispositivo para tratar material em folha contìnua em um processo acentuado com plasmaInfo
- Publication number
- BR0315010A BR0315010A BR0315010-0A BR0315010A BR0315010A BR 0315010 A BR0315010 A BR 0315010A BR 0315010 A BR0315010 A BR 0315010A BR 0315010 A BR0315010 A BR 0315010A
- Authority
- BR
- Brazil
- Prior art keywords
- magnetron
- plasma
- web
- drum
- sheet material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Plasma Technology (AREA)
Abstract
"DISPOSITIVO PARA TRATAR MATERIAL EM FOLHA CONTìNUA EM UM PROCESSO ACENTUADO COM PLASMA". A presente invenção refere-se a um dispositivo para tratar um material em folha contínua em um processo acentuado com plasma contínuo que compreende uma câmara de vácuo (1) com o dispositivo (2) para manter uma pressão reduzida constante dentro da câmara (1) e disposto dentro da câmara (1), um tambor giratório (3) para suportar e transportar a folha contínua (4), um dispositivo magnetron defrontando-se com a folha contínua (4) suportada e transportada pelo tambor (3) e um dispositivo de suprimento de gás para suprir um gás do processo ou mistura do gás do processo para um espaço (10) entre o tambor e o dispositivo magnetron, espaço este (10) no qual o plasma é sustentado. O dispositivo magnetron compreende uma pluralidade de eletrodos magnetron independentes (6) com faces de magnetron retangulares dispostas ao lado uma da outra em paralelo. Cada eletrodo magnetron (6) é individualmente energizado com uma voltagem alternada por seu próprio dispositivo de suprimento de força (7). O tambor (3) é eletricamente aterrado, flutuante ou negativamente polarizado. O dispositivo é em particular aplicável para revestir uma folha contínua flexível (4) em um processo químico de deposição por vapor acentuado com plasma, por exemplo, para revestir uma folha contínua de uma película de polímero com óxido de silício para aperfeiçoar suas propriedades de barreira. O dispositivo produz com alta confiabilidade, revestimentos com uma qualidade muito constante e só precisa de pouca manutenção que pode ser realizada de uma maneira simples.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01652/02A CH696013A5 (de) | 2002-10-03 | 2002-10-03 | Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess. |
PCT/CH2003/000609 WO2004032175A1 (de) | 2002-10-03 | 2003-09-09 | Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess |
Publications (1)
Publication Number | Publication Date |
---|---|
BR0315010A true BR0315010A (pt) | 2005-08-09 |
Family
ID=32046627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR0315010-0A BR0315010A (pt) | 2002-10-03 | 2003-09-09 | Dispositivo para tratar material em folha contìnua em um processo acentuado com plasma |
Country Status (11)
Country | Link |
---|---|
US (1) | US7806981B2 (pt) |
EP (1) | EP1547124B1 (pt) |
JP (1) | JP4585860B2 (pt) |
KR (1) | KR100977892B1 (pt) |
CN (1) | CN100466154C (pt) |
AU (1) | AU2003257359A1 (pt) |
BR (1) | BR0315010A (pt) |
CH (1) | CH696013A5 (pt) |
DE (1) | DE50303504D1 (pt) |
MX (1) | MXPA05003539A (pt) |
WO (1) | WO2004032175A1 (pt) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5095087B2 (ja) * | 2005-04-21 | 2012-12-12 | 大日本印刷株式会社 | 成膜装置及び成膜方法 |
JP4558810B2 (ja) * | 2008-02-29 | 2010-10-06 | 富士フイルム株式会社 | 成膜装置 |
DE202008006477U1 (de) * | 2008-05-06 | 2008-07-24 | Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden | Vorrichtung zur Modifizierung von Substratoberflächen |
EP2473650A4 (en) * | 2009-09-05 | 2015-09-02 | Gen Plasma Inc | PLASMA ASSISTED STEAM PHASE CHEMICAL DEPOSITION APPARATUS |
JP5270505B2 (ja) * | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
JP6474546B2 (ja) * | 2011-12-28 | 2019-02-27 | 大日本印刷株式会社 | プラズマを使った前処理装置を有した蒸着装置 |
JP5958092B2 (ja) * | 2012-05-31 | 2016-07-27 | ソニー株式会社 | 成膜装置及び成膜方法 |
JP6045265B2 (ja) * | 2012-09-18 | 2016-12-14 | リンテック株式会社 | イオン注入装置 |
EP2762607B1 (en) * | 2013-01-31 | 2018-07-25 | Applied Materials, Inc. | Deposition source with adjustable electrode |
EP3054032B1 (en) * | 2015-02-09 | 2017-08-23 | Coating Plasma Industrie | Installation for film deposition onto and/or modification of the surface of a moving substrate |
RU2719370C2 (ru) * | 2015-07-03 | 2020-04-17 | Тетра Лаваль Холдингз Энд Файнэнс С.А. | Устройство для обработки полотняной основы в плазмостимулируемом процессе |
WO2017072121A1 (en) | 2015-10-29 | 2017-05-04 | Tetra Laval Holdings & Finance S.A. | Laminated barrier film and edge-covering strip for packaging |
US20200190663A1 (en) | 2017-04-28 | 2020-06-18 | Tetra Laval Holdings & Finance S.A. | Barrier film |
CN110832108B (zh) * | 2017-06-30 | 2023-03-31 | 凸版印刷株式会社 | 膜处理方法及膜制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3884787A (en) * | 1973-01-12 | 1975-05-20 | Coulter Information Systems | Sputtering method for thin film deposition on a substrate |
US4322276A (en) * | 1979-06-20 | 1982-03-30 | Deposition Technology, Inc. | Method for producing an inhomogeneous film for selective reflection/transmission of solar radiation |
JPH07100857B2 (ja) * | 1985-10-09 | 1995-11-01 | 株式会社日立製作所 | 炭素皮膜形成方法及び装置 |
US4738761A (en) * | 1986-10-06 | 1988-04-19 | Microelectronics Center Of North Carolina | Shared current loop, multiple field apparatus and process for plasma processing |
JPS63103066A (ja) * | 1986-10-17 | 1988-05-07 | Hitachi Ltd | プレ−ナマグネトロン方式のスパツタリング装置 |
DE3735162A1 (de) * | 1986-10-17 | 1988-04-28 | Hitachi Ltd | Aufdampfvorrichtung |
JPS63112441A (ja) * | 1986-10-28 | 1988-05-17 | Nippon Sheet Glass Co Ltd | 透明熱線反射板 |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
EP0308680A1 (de) * | 1987-09-21 | 1989-03-29 | THELEN, Alfred, Dr. | Vorrichtung zum Kathodenzerstäuben |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
JP3111353B2 (ja) * | 1989-08-31 | 2000-11-20 | 橋本フォーミング工業株式会社 | 透明樹脂成形品の製造方法 |
JPH0565642A (ja) * | 1991-09-10 | 1993-03-19 | Matsushita Electric Ind Co Ltd | 反応性スパツタリング装置 |
US5224441A (en) * | 1991-09-27 | 1993-07-06 | The Boc Group, Inc. | Apparatus for rapid plasma treatments and method |
JPH09111460A (ja) * | 1995-10-11 | 1997-04-28 | Anelva Corp | チタン系導電性薄膜の作製方法 |
DE59611403D1 (de) * | 1995-10-27 | 2007-01-25 | Applied Materials Gmbh & Co Kg | Vorrichtung zum Beschichten eines Substrats |
JP4332226B2 (ja) * | 1996-06-03 | 2009-09-16 | 株式会社アルバック | 可撓性フィルム用プラズマcvd装置、アモルファスシリコン製造方法 |
JPH1192579A (ja) * | 1997-09-19 | 1999-04-06 | Nitto Denko Corp | 有機基材のプラズマ処理方法及び有機基材への金属層形成方法 |
US6306265B1 (en) * | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
JP2001035839A (ja) * | 1999-05-18 | 2001-02-09 | Hitachi Kokusai Electric Inc | プラズマ生成装置および半導体製造方法 |
JP3645768B2 (ja) * | 1999-12-07 | 2005-05-11 | シャープ株式会社 | プラズマプロセス装置 |
US6532161B2 (en) * | 1999-12-07 | 2003-03-11 | Advanced Energy Industries, Inc. | Power supply with flux-controlled transformer |
-
2002
- 2002-10-03 CH CH01652/02A patent/CH696013A5/de not_active IP Right Cessation
-
2003
- 2003-09-09 EP EP03798846A patent/EP1547124B1/de not_active Expired - Lifetime
- 2003-09-09 MX MXPA05003539A patent/MXPA05003539A/es active IP Right Grant
- 2003-09-09 WO PCT/CH2003/000609 patent/WO2004032175A1/de active IP Right Grant
- 2003-09-09 KR KR1020057005705A patent/KR100977892B1/ko active IP Right Grant
- 2003-09-09 DE DE50303504T patent/DE50303504D1/de not_active Expired - Lifetime
- 2003-09-09 BR BR0315010-0A patent/BR0315010A/pt not_active IP Right Cessation
- 2003-09-09 CN CNB038235994A patent/CN100466154C/zh not_active Expired - Fee Related
- 2003-09-09 AU AU2003257359A patent/AU2003257359A1/en not_active Abandoned
- 2003-09-09 US US10/529,533 patent/US7806981B2/en not_active Expired - Fee Related
- 2003-09-09 JP JP2004540443A patent/JP4585860B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE50303504D1 (de) | 2006-06-29 |
US7806981B2 (en) | 2010-10-05 |
WO2004032175A1 (de) | 2004-04-15 |
CH696013A5 (de) | 2006-11-15 |
CN100466154C (zh) | 2009-03-04 |
EP1547124B1 (de) | 2006-05-24 |
KR20050065572A (ko) | 2005-06-29 |
EP1547124A1 (de) | 2005-06-29 |
CN1689133A (zh) | 2005-10-26 |
US20060150908A1 (en) | 2006-07-13 |
JP4585860B2 (ja) | 2010-11-24 |
AU2003257359A1 (en) | 2004-04-23 |
JP2006501366A (ja) | 2006-01-12 |
KR100977892B1 (ko) | 2010-08-24 |
MXPA05003539A (es) | 2005-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 13A ANUIDADE. |
|
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2385 DE 20-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |