JP4585860B2 - プラズマ強化プロセスにおいてウェブ材料を処理するための装置および方法 - Google Patents
プラズマ強化プロセスにおいてウェブ材料を処理するための装置および方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 title claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002826 coolant Substances 0.000 claims description 2
- 238000005019 vapor deposition process Methods 0.000 claims 2
- 239000000696 magnetic material Substances 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 36
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- Chemical & Material Sciences (AREA)
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Plasma Technology (AREA)
Description
該回転ドラムは、その円周面の部分に接しているウェブ材料を支持しかつ搬送するために備え付けられ、さらに、プラズマが閉じ込められる電極の対のうちの1つとして機能するよう備え付けられる。当該装置はさらに、真空チャンバ内にマグネトロン機能のために備え付けられる複数のさらなる電極を含む。すなわち、装置は、プラズマを維持するのに適した交流電界を確立するための手段と、帯電させた粒子、特に電子を少なくとも部分的にプラズマに閉じ込めるのに好適な磁界を設定するための手段とを含む。マグネトロン電極はドラムとともにドラムの円周面の部分に沿って空間を形成するよう配置され、ウェブが、ドラムの円周面上に位置したままでこの空間を通って搬送される。
、たとえば、予備の洗浄またはエッチングステップ、以下のコーティングステップ、および所望の湿潤性を有するコーティング表面を作り出すための最終的なステップである。
Claims (12)
- プラズマ強化プロセスにおいてウェブ材料を処理するための装置であって、前記装置は、
真空チャンバ(1)を含み、これは前記チャンバ(1)内で一定の減圧を維持するための手段(2)を備え、
前記チャンバ(1)内に配置された回転ドラム(3)をも含み、これは前記ドラムの円周面に対面して位置するウェブ材料を支持しかつ連続的に搬送し、前記ドラムは電気的に接地され、電気的に浮遊し、または負にバイアスされており、
長方形のマグネトロン面を備えた複数の独立したマグネトロン電極(6)をさらに含み、各マグネトロン電極(6)はプラズマ強化気相堆積プロセスを実行するように設定されていてそれ自身の電源手段(7)によって交流電圧が供給され、前記マグネトロン面は前記ドラムの軸に平行な長辺が互いに隣接して短辺が前記ドラムの円周面の接線方向になるように配置され、
前記ドラムの円周面と前記マグネトロン面との間の空間(10)にプロセスガスまたはプロセスガス混合物を供給するためのガス供給線(8、8’)をさらに含み、前記ガス供給線と前記マグネトロン面とは前記ドラムの円周面とともに邪魔板のない統合された1つのプロセス空間を形成するように並んで配置され、このプロセス空間は円筒の一部の形状を有しており、前記ガス供給線はプロセスガスまたはプロセスガス混合物の共通源に接続されていることを特徴とする、装置。 - 前記ガス供給線(8、8’)は、前記マグネトロン面内に延在し、前記マグネトロン面の長辺に対して平行であることを特徴とする、請求項1に記載の装置。
- 前記ガス供給線(8、8′)は、前記マグネトロン面に対して垂直に、または前記マグネトロン面に対して平行にガスを注入するよう配置されるガス出口の列を含むことを特徴とする、請求項2に記載の装置。
- 前記マグネトロン電極(6)が対のマグネトロンを構成することを特徴とする、請求項1から3のいずれかに記載の装置。
- 前記マグネトロン面と前記ドラムとの間における前記空間(10)に供給される前記ガスが、軸方向に、および/または隣り合うマグネトロン面の間で除去可能であることを特徴とする、請求項1から4のいずれかに記載の装置。
- 前記マグネトロン面は、前記マグネトロン面を構成する磁極に亘って延在する非磁性材料の電極部(34)を含むことを特徴とする、請求項1から5のいずれかに記載の装置。
- 前記マグネトロン面の前記電極部(34)はチャネル(35)を含み、前記チャネル(35)は、前記チャネル(35)を通じて冷却媒体を循環させるための手段に接続されることを特徴とする、請求項6に記載の装置。
- 前記マグネトロン電極(6)は不平衡なタイプのマグネトロンを構成することを特徴とする、請求項1から7のいずれかに記載の装置。
- 前記マグネトロン面は永久磁石の中央極および周辺極(30および31)を含み、前記中央極(30)は前記周辺極(31)の半分の磁力を有することを特徴とする、請求項8に記載の装置。
- プラズマ強化プロセスにおいてウェブ材料を処理する方法であって、
真空チャンバ(1)内を一定の減圧に維持し、
前記チャンバ(1)内に配置された回転ドラム(3)の円周面に対面して位置するウェブ材料を支持しかつ連続的に搬送し、前記ドラムは電気的に接地され、電気的に浮遊し、または負にバイアスされ、
プラズマ強化気相堆積プロセスを実行するように設定された長方形のマグネトロン面を備えた複数の独立したマグネトロン電極(6)へそれ自身の電源手段(7)によって交流電圧を供給し、前記マグネトロン面は前記ドラムの軸に平行な長辺が互いに隣接して短辺が前記ドラムの円周面の実施的に接線方向になるように配置され、
前記ドラムの円周面と前記マグネトロン面との間の空間(10)へガス供給線(8、8’)を通して共通のプロセスガスまたはプロセスガス混合物を供給し、前記ガス供給線はプロセスガスまたはプロセスガス混合物の共通源に接続され、前記ガス供給線と前記マグネトロン面とは前記ドラムの円周面とともに邪魔板のない統合された1つのプロセス空間を形成するように並んで配置され、このプロセス空間は円筒の一部の形状を有していることを特徴とする、方法。 - 前記マグネトロン面に対して直交してまたは実質的に平行に前記ガスを注入することをさらに含む、請求項10に記載の方法。
- 前記ガスが、軸方向に、および/または隣り合うマグネトロン面の間で除去されることをさらに含む、請求項10に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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CH01652/02A CH696013A5 (de) | 2002-10-03 | 2002-10-03 | Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess. |
PCT/CH2003/000609 WO2004032175A1 (de) | 2002-10-03 | 2003-09-09 | Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess |
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JP2006501366A JP2006501366A (ja) | 2006-01-12 |
JP4585860B2 true JP4585860B2 (ja) | 2010-11-24 |
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US (1) | US7806981B2 (ja) |
EP (1) | EP1547124B1 (ja) |
JP (1) | JP4585860B2 (ja) |
KR (1) | KR100977892B1 (ja) |
CN (1) | CN100466154C (ja) |
AU (1) | AU2003257359A1 (ja) |
BR (1) | BR0315010A (ja) |
CH (1) | CH696013A5 (ja) |
DE (1) | DE50303504D1 (ja) |
MX (1) | MXPA05003539A (ja) |
WO (1) | WO2004032175A1 (ja) |
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DE202008006477U1 (de) * | 2008-05-06 | 2008-07-24 | Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden | Vorrichtung zur Modifizierung von Substratoberflächen |
JP2013503974A (ja) * | 2009-09-05 | 2013-02-04 | ジェネラル・プラズマ・インコーポレーテッド | プラズマ化学気相成長装置 |
JP5270505B2 (ja) * | 2009-10-05 | 2013-08-21 | 株式会社神戸製鋼所 | プラズマcvd装置 |
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2002
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2003
- 2003-09-09 AU AU2003257359A patent/AU2003257359A1/en not_active Abandoned
- 2003-09-09 KR KR1020057005705A patent/KR100977892B1/ko active IP Right Grant
- 2003-09-09 EP EP03798846A patent/EP1547124B1/de not_active Expired - Lifetime
- 2003-09-09 BR BR0315010-0A patent/BR0315010A/pt not_active IP Right Cessation
- 2003-09-09 US US10/529,533 patent/US7806981B2/en not_active Expired - Fee Related
- 2003-09-09 CN CNB038235994A patent/CN100466154C/zh not_active Expired - Fee Related
- 2003-09-09 DE DE50303504T patent/DE50303504D1/de not_active Expired - Lifetime
- 2003-09-09 MX MXPA05003539A patent/MXPA05003539A/es active IP Right Grant
- 2003-09-09 WO PCT/CH2003/000609 patent/WO2004032175A1/de active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
EP1547124A1 (de) | 2005-06-29 |
CN100466154C (zh) | 2009-03-04 |
JP2006501366A (ja) | 2006-01-12 |
WO2004032175A1 (de) | 2004-04-15 |
US20060150908A1 (en) | 2006-07-13 |
US7806981B2 (en) | 2010-10-05 |
AU2003257359A1 (en) | 2004-04-23 |
KR100977892B1 (ko) | 2010-08-24 |
EP1547124B1 (de) | 2006-05-24 |
CH696013A5 (de) | 2006-11-15 |
DE50303504D1 (de) | 2006-06-29 |
KR20050065572A (ko) | 2005-06-29 |
MXPA05003539A (es) | 2005-06-03 |
BR0315010A (pt) | 2005-08-09 |
CN1689133A (zh) | 2005-10-26 |
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