JP2006345003A5 - - Google Patents

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Publication number
JP2006345003A5
JP2006345003A5 JP2006254027A JP2006254027A JP2006345003A5 JP 2006345003 A5 JP2006345003 A5 JP 2006345003A5 JP 2006254027 A JP2006254027 A JP 2006254027A JP 2006254027 A JP2006254027 A JP 2006254027A JP 2006345003 A5 JP2006345003 A5 JP 2006345003A5
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JP
Japan
Prior art keywords
region
forming
film
gate electrode
metal
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JP2006254027A
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English (en)
Japanese (ja)
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JP4481284B2 (ja
JP2006345003A (ja
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Priority to JP2006254027A priority Critical patent/JP4481284B2/ja
Priority claimed from JP2006254027A external-priority patent/JP4481284B2/ja
Publication of JP2006345003A publication Critical patent/JP2006345003A/ja
Publication of JP2006345003A5 publication Critical patent/JP2006345003A5/ja
Application granted granted Critical
Publication of JP4481284B2 publication Critical patent/JP4481284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006254027A 2006-09-20 2006-09-20 半導体装置の作製方法 Expired - Fee Related JP4481284B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006254027A JP4481284B2 (ja) 2006-09-20 2006-09-20 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006254027A JP4481284B2 (ja) 2006-09-20 2006-09-20 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8307443A Division JPH10135475A (ja) 1996-10-31 1996-10-31 半導体装置およびその作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009234439A Division JP4481361B2 (ja) 2009-10-08 2009-10-08 半導体装置
JP2010032871A Division JP4628485B2 (ja) 2010-02-17 2010-02-17 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2006345003A JP2006345003A (ja) 2006-12-21
JP2006345003A5 true JP2006345003A5 (hu) 2009-11-26
JP4481284B2 JP4481284B2 (ja) 2010-06-16

Family

ID=37641657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006254027A Expired - Fee Related JP4481284B2 (ja) 2006-09-20 2006-09-20 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4481284B2 (hu)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
JP2009260327A (ja) * 2008-03-26 2009-11-05 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置およびその製造方法
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788160A (en) * 1987-03-31 1988-11-29 Texas Instruments Incorporated Process for formation of shallow silicided junctions
JP3506445B2 (ja) * 1992-05-12 2004-03-15 沖電気工業株式会社 半導体装置の製造方法
JP3152739B2 (ja) * 1992-05-19 2001-04-03 株式会社日立製作所 半導体集積回路装置の製造方法
JPH0766426A (ja) * 1993-08-27 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH07135323A (ja) * 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
JP2833468B2 (ja) * 1994-02-17 1998-12-09 日本電気株式会社 半導体装置の製造方法
JPH07283400A (ja) * 1994-04-08 1995-10-27 Nippon Steel Corp 半導体装置及びその製造方法

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