JP2006324271A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2006324271A JP2006324271A JP2005143402A JP2005143402A JP2006324271A JP 2006324271 A JP2006324271 A JP 2006324271A JP 2005143402 A JP2005143402 A JP 2005143402A JP 2005143402 A JP2005143402 A JP 2005143402A JP 2006324271 A JP2006324271 A JP 2006324271A
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- semiconductor
- semiconductor component
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 237
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000011295 pitch Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 19
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- H—ELECTRICITY
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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Abstract
【解決手段】 半導体装置を構成するインターポーザ基板1の主面には、複数のバンプ電極18を介してWPP構成の半導体部品2が実装されている。また、インターポーザ基板1の主面には、上記バンプ電極18よりも直径および隣接ピッチが大きい複数のバンプ電極23を介してCSP構成の半導体部品3が実装されている。そして、このインターポーザ基板1と半導体部品2との対向面間と、インターポーザ基板1と半導体部品3との対向面間とには、それぞれ互いに異なるアンダーフィル4a,4bが充填されている。
【選択図】 図6
Description
明は上記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可
能であることは言うまでもない。
2 半導体部品(第1半導体部品)
2A 半導体チップ(第1半導体チップ)
2B 多層配線層(配線層)
2C 再配線層
3 半導体部品(第2半導体部品)
3A 半導体チップ(第2半導体チップ)
4a アンダーフィル
4b アンダーフィル
5 バンプ電極(第3バンプ)
6 ソルダーレジスト
8a,8b ランド
10 表面保護膜
11 絶縁膜
12 再配線
12a 主導体膜
12b メッキ層
13 表面保護膜
15 メッキ層
18 バンプ電極(第1バンプ)
20 配線基板
20a 開口部
20b ランド
21 樹脂封止部
22 接着シート
23 バンプ電極(第2バンプ)
24 樹脂封止部
28a ソケット
28b 蓋
30 マザーボード
31 放熱シート
32 筐体
BP ボンディングパッド
BW ボンディングワイヤ
Claims (9)
- 厚さ方向に沿って互いに反対側になる第1面および第2面を有する基板と、
前記基板の第1面上に、第1高さを持つ複数の第1バンプを介して実装された第1半導体部品と、
前記基板の第1面上に、前記第1高さよりも高い第2高さを持つ複数の第2バンプを介して実装された第2半導体部品とを備え、
前記基板と前記第1半導体部品との間と、前記基板と前記第2半導体部品との間とで、異なるアンダーフィルを介在させたことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、前記複数の第2バンプのピッチの方が、前記複数の第1バンプのピッチよりも大きいことを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記基板と前記第1半導体部品との間に介在されるアンダーフィルと、前記基板と前記第2半導体部品との間に介在されるアンダーフィルとで熱膨張係数が異なることを特徴とする半導体装置。
- 請求項3記載の半導体装置において、前記基板と前記第2半導体部品との間に介在されるアンダーフィルの熱膨張係数の方が、前記基板と前記第1半導体部品との間に介在されるアンダーフィルの熱膨張係数よりも高いことを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記第1半導体部品と前記第2半導体部品とで前記アンダーフィルが接触する部分の材料が異なることを特徴とする半導体装置。
- 請求項5記載の半導体装置において、前記基板と前記第1半導体部品との間のアンダーフィルが前記第1半導体部品に接触する部分の材料がポリイミド系樹脂であり、前記基板と前記第2半導体部品との間のアンダーフィルが前記第2半導体部品に接触する部分の材料がエポキシ系樹脂であることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、
前記第1半導体部品は、
第1半導体チップと、
前記第1半導体チップの主面上に形成される配線層と、
前記配線層上に形成される再配線層と、
前記再配線層と電気的に接続される前記複数の第1バンプとを有し、
前記第2半導体部品は、
第2半導体チップと、
前記第2半導体チップの主面上に形成される配線層と、
前記第2半導体チップが実装され、前記第2半導体チップの前記配線層が電気的に接続される配線基板と、
前記配線基板の配線に電気的に接続される前記複数の第2バンプとを有することを特徴とする半導体装置。 - 請求項7記載の半導体装置において、前記第1半導体チップにはロジック回路が形成されており、前記第2半導体チップにはメモリ回路が形成されていることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記基板の前記第2面に複数の第3バンプが接合されており、前記複数の第1バンプ、前記複数の第2バンプおよび前記複数の第3バンプは無鉛半田で形成されていることを特徴とする半導体装置。
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JP2005143402A JP4758678B2 (ja) | 2005-05-17 | 2005-05-17 | 半導体装置 |
KR1020060043619A KR101153693B1 (ko) | 2005-05-17 | 2006-05-16 | 반도체 장치 |
US11/434,745 US7547968B2 (en) | 2005-05-17 | 2006-05-17 | Semiconductor device |
US12/470,562 US7834455B2 (en) | 2005-05-17 | 2009-05-22 | Semiconductor device |
US12/906,775 US8101468B2 (en) | 2005-05-17 | 2010-10-18 | Method of manufacturing a semiconductor device |
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JP2010056162A (ja) * | 2008-08-26 | 2010-03-11 | Fujitsu Ltd | 半導体装置および回路基板組立体 |
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JP5851878B2 (ja) * | 2012-02-21 | 2016-02-03 | ルネサスエレクトロニクス株式会社 | 半導体モジュールの製造方法 |
DE102012109922B4 (de) * | 2012-04-16 | 2020-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package-on-Package-Struktur und Verfahren zur Herstellung derselben |
GB2504343A (en) | 2012-07-27 | 2014-01-29 | Ibm | Manufacturing an semiconductor chip underfill using air vent |
CN103151341B (zh) * | 2013-03-13 | 2015-05-13 | 华进半导体封装先导技术研发中心有限公司 | 系统级封装结构 |
KR20150135611A (ko) | 2014-05-22 | 2015-12-03 | 에스케이하이닉스 주식회사 | 멀티 칩 패키지 및 제조 방법 |
WO2016175653A2 (en) * | 2015-04-28 | 2016-11-03 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Apparatus and method for soldering chips |
JP6543129B2 (ja) * | 2015-07-29 | 2019-07-10 | ルネサスエレクトロニクス株式会社 | 電子装置 |
JP6330788B2 (ja) * | 2015-11-18 | 2018-05-30 | 株式会社村田製作所 | 電子デバイス |
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US20110033983A1 (en) | 2011-02-10 |
US8101468B2 (en) | 2012-01-24 |
US7547968B2 (en) | 2009-06-16 |
US7834455B2 (en) | 2010-11-16 |
KR101153693B1 (ko) | 2012-06-18 |
US20060264022A1 (en) | 2006-11-23 |
JP4758678B2 (ja) | 2011-08-31 |
KR20060119769A (ko) | 2006-11-24 |
US20090230551A1 (en) | 2009-09-17 |
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