JP2006228844A - 不揮発性半導体記憶装置およびその製造方法 - Google Patents
不揮発性半導体記憶装置およびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 54
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002096 quantum dot Substances 0.000 claims abstract description 21
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 20
- 229910019001 CoSi Inorganic materials 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 37
- 239000011229 interlayer Substances 0.000 claims description 22
- 229910005881 NiSi 2 Inorganic materials 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000015654 memory Effects 0.000 abstract description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 229910005883 NiSi Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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Abstract
ナノドットを均一に形成することで,高信頼のナノドットメモリを提供する。また,トンネル絶縁膜にシリコン酸化膜代替材料を採用することにより,高速,高信頼のナノドットメモリを提供する。
【解決手段】
シリコンあるいはゲルマニウム基板,好ましくはシリコンあるいはゲルマニウムの(111)基板上にHfO2,ZrO2あるいはCeO2の高誘電率絶縁膜をエピタキシャル成長させたトンネル絶縁膜と,前記トンネル絶縁膜上に形成されたCoSi2あるいはNiSi2のシリサイドナノドットを有することを特徴とする。
【選択図】図3
Description
2, 3…ソース・ドレイン拡散層
4…高誘電率トンネル絶縁膜
5…シリサイドナノドット
6, 12, 23, 24, 25, 27…層間絶縁膜
7…コントロールゲート
8, 9…コンタクトプラグ
10, 11…コンタクト層
13, 14, 17, 18, 35, 37…バリアメタル
15, 16, 36…配線層
19, 20…素子分離層
21, 22…サイドウォール
26…高誘電率絶縁膜
28…コントロールゲート用電極膜
29, 30…インプラダメージ低減のための絶縁膜
31, 32…浅いソース・ドレイン領域
33, 34…コンタクトホール
50…高誘電率層間絶縁膜
Claims (12)
- 基板がシリコンあるいはゲルマニウム基板であり,前記基板上のトンネル絶縁膜がHfO2,ZrO2あるいはCeO2の高誘電率絶縁材料により構成され,前記トンネル絶縁膜上の電荷蓄積部がナノドット状になっており,前記ナノドットがCoSi2あるいはNiSi2のシリサイドにより構成されることを特徴とする不揮発性半導体メモリ。
- 請求項1において,前記基板がシリコンあるいはゲルマニウムの(111)基板であることを特徴とする不揮発性半導体メモリ。
- シリコンあるいはゲルマニウム基板を準備する工程と, 前記基板上にHfO2,ZrO2あるいはCeO2のエピタキシャル成長によりトンネル絶縁膜を形成する工程と, 前記トンネル絶縁膜上にCVDあるいはALDによりCoSi2あるいはNiSi2のシリサイドにより構成されるナノドットを形成する工程とを有することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項3において,前記基板として,(111)基板を準備することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項3において,前記ナノドットを直径約20nm程度以下に形成する工程とを有することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項4において,前記ナノドットを直径約20nm程度以下に形成する工程とを有することを特徴とする不揮発性半導体メモリの製造方法。
- 基板がシリコンあるいはゲルマニウム基板であり,前記基板上のトンネル絶縁膜がHfO2,ZrO2あるいはCeO2の高誘電率絶縁材料により構成され,前記トンネル絶縁膜上の電荷蓄積部がナノドット状になっており,前記ナノドットがCoSi2あるいはNiSi2のシリサイドにより構成され,前記ナノドット上のコントロールゲートとの層間絶縁膜がHfO2,ZrO2あるいはCeO2の高誘電率絶縁材料により構成されることを特徴とする不揮発性半導体メモリ。
- 請求項7において,前記基板が(111)基板であることを特徴とする不揮発性半導体メモリ。
- シリコンあるいはゲルマニウム基板を準備する工程と,前記基板上にHfO2,ZrO2あるいはCeO2のエピタキシャル成長により製膜されるトンネル絶縁膜を形成する工程と,前記トンネル絶縁膜上にCVDあるいはALDによりCoSi2あるいはNiSi2のシリサイドにより構成されるナノドットを形成する工程と, 前記ナノドット上にHfO2,ZrO2あるいはCeO2をエピタキシャル成長させることにより層間絶縁膜を形成する工程と, 前記層間絶縁膜上にコントロールゲートを形成する工程とを有することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項9において,前記基板として,(111)基板を準備することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項9において,前記ナノドットを直径約20nm程度以下に形成することを特徴とする不揮発性半導体メモリの製造方法。
- 請求項10において,前記ナノドットを直径約20nm程度以下に形成する工程とを有することを特徴とする不揮発性半導体メモリの製造方法。
Priority Applications (5)
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JP2005038537A JP4442454B2 (ja) | 2005-02-16 | 2005-02-16 | 不揮発性半導体メモリの製造方法 |
TW095100170A TWI289913B (en) | 2005-02-16 | 2006-01-03 | Non-volatile semiconductor memory device and its manufacturing |
US11/354,092 US7279739B2 (en) | 2005-02-16 | 2006-02-15 | Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film |
KR1020060014612A KR100761180B1 (ko) | 2005-02-16 | 2006-02-15 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
CNB2006100090249A CN100449787C (zh) | 2005-02-16 | 2006-02-16 | 非易失性半导体存储装置及其制造方法 |
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JP2005038537A JP4442454B2 (ja) | 2005-02-16 | 2005-02-16 | 不揮発性半導体メモリの製造方法 |
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JP4442454B2 JP4442454B2 (ja) | 2010-03-31 |
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JP (1) | JP4442454B2 (ja) |
KR (1) | KR100761180B1 (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227509A (ja) * | 2007-03-14 | 2008-09-25 | Korea Advanced Inst Of Sci Technol | 非揮発性メモリセルおよびその製造方法 |
US8283654B2 (en) | 2009-06-16 | 2012-10-09 | Electronics And Telecommunications Research Institute | Nanowire memory |
KR101341571B1 (ko) | 2007-04-30 | 2013-12-16 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
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US7057881B2 (en) | 2004-03-18 | 2006-06-06 | Nanosys, Inc | Nanofiber surface based capacitors |
JP2007227694A (ja) * | 2006-02-24 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
TWI338914B (en) * | 2006-07-12 | 2011-03-11 | Ind Tech Res Inst | Metallic compound dots dielectric piece and method of fabricating the same |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
KR100907473B1 (ko) * | 2007-09-20 | 2009-07-10 | 재단법인서울대학교산학협력재단 | 실리사이드 나노점 형성방법 및 실리사이드 나노점이형성되어 있는 적층구조물 |
US8395941B2 (en) | 2010-05-17 | 2013-03-12 | Micron Technology, Inc. | Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same |
US9166004B2 (en) | 2010-12-23 | 2015-10-20 | Intel Corporation | Semiconductor device contacts |
US20130294180A1 (en) | 2011-01-13 | 2013-11-07 | Ramot at Tel-Avlv University Ltd. | Charge storage organic memory system |
TWI484679B (zh) * | 2012-12-17 | 2015-05-11 | Winbond Electronics Corp | 非揮發性記憶體 |
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KR100271211B1 (ko) * | 1998-07-15 | 2000-12-01 | 윤덕용 | 나노결정을 이용한 비휘발성 기억소자 형성방법 |
US6586785B2 (en) * | 2000-06-29 | 2003-07-01 | California Institute Of Technology | Aerosol silicon nanoparticles for use in semiconductor device fabrication |
JP4265882B2 (ja) * | 2001-12-13 | 2009-05-20 | 忠弘 大見 | 相補型mis装置 |
KR100459895B1 (ko) * | 2002-02-09 | 2004-12-04 | 삼성전자주식회사 | 퀀텀 도트를 가지는 메모리 소자 및 그 제조방법 |
KR100763897B1 (ko) * | 2002-12-23 | 2007-10-05 | 삼성전자주식회사 | 나노도트를 가지는 메모리 제조방법 |
KR100558003B1 (ko) * | 2003-09-26 | 2006-03-06 | 삼성전자주식회사 | 복수개의 유전체 나노클러스터들을 채택하는 비휘발성메모리 셀 및 그것을 제조하는 방법 |
US7262991B2 (en) * | 2005-06-30 | 2007-08-28 | Intel Corporation | Nanotube- and nanocrystal-based non-volatile memory |
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- 2006-02-15 US US11/354,092 patent/US7279739B2/en not_active Expired - Fee Related
- 2006-02-16 CN CNB2006100090249A patent/CN100449787C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227509A (ja) * | 2007-03-14 | 2008-09-25 | Korea Advanced Inst Of Sci Technol | 非揮発性メモリセルおよびその製造方法 |
KR101341571B1 (ko) | 2007-04-30 | 2013-12-16 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
US8283654B2 (en) | 2009-06-16 | 2012-10-09 | Electronics And Telecommunications Research Institute | Nanowire memory |
Also Published As
Publication number | Publication date |
---|---|
KR100761180B1 (ko) | 2007-09-21 |
US7279739B2 (en) | 2007-10-09 |
KR20060092112A (ko) | 2006-08-22 |
CN100449787C (zh) | 2009-01-07 |
TWI289913B (en) | 2007-11-11 |
TW200633148A (en) | 2006-09-16 |
US20060180852A1 (en) | 2006-08-17 |
JP4442454B2 (ja) | 2010-03-31 |
CN1822397A (zh) | 2006-08-23 |
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