JP2006210924A - 高誘電率セラミック材料のコアを有する多構成要素ltcc基板およびその開発のための方法 - Google Patents
高誘電率セラミック材料のコアを有する多構成要素ltcc基板およびその開発のための方法 Download PDFInfo
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- JP2006210924A JP2006210924A JP2006017352A JP2006017352A JP2006210924A JP 2006210924 A JP2006210924 A JP 2006210924A JP 2006017352 A JP2006017352 A JP 2006017352A JP 2006017352 A JP2006017352 A JP 2006017352A JP 2006210924 A JP2006210924 A JP 2006210924A
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Images
Classifications
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
- C04B35/499—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides containing also titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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Abstract
【解決手段】コアテープの少なくとも1つの層を含む前駆体グリーン積層体を提供する工程であって、該コアテープは少なくとも20の誘電率を有する工程と;自己束縛テープの1つまたは複数の層を提供する工程と;主テープの1つまたは複数の層を提供する工程と;コアテープ、自己束縛テープおよび主テープの層を揃える工程と;コアテープ、自己束縛テープおよび主テープの層を積層および共焼成してセラミック構造物を形成する工程とを含む、低温共焼成セラミック構造物を製造するための方法。
【選択図】図1
Description
SiO2 52〜54;
Al2O3 12.5〜14.5;
B2O3 8〜9;
CaO 16〜18;
MgO 0.5〜5;
Na2O 1.7〜2.5;
Li2O 0.2〜0.3;
SrO 0〜4;
K2O 1〜2。
ガラスのより好ましい組成は、質量%で:
SiO2 53.50;
Al2O3 13.00;
B2O3 8.50;
CaO 17.0;
MgO 1.00;
Na2O 2.25;
Li2O 0.25;
SrO 3.00;
K2O 1.50
である。主テープにおいて、フリットのD50(メジアン粒度)は、好ましくは0.1〜5.0マイクロメートル、より好ましくは0.3〜3.0マイクロメートルの範囲内であるが、それに限定されるものではない。
B2O3 6〜13;
BaO 20〜22;
Li2O 0.5〜1.5;
P2O5 3.5〜4.5;
TiO2 25〜33;
Cs2O 1〜6.5;
Nd2O3、29〜32。
ガラスのより好ましい組成は、質量%で:
B2O3 11.84;
BaO 21.12;
Li2O 1.31;
P2O5 4.14;
TiO2 25.44;
Cs2O 6.16;
Nd2O3 29.99
である。別の好ましいガラスは、以下の酸化物成分を示した組成範囲(質量%)内で含む:
SiO2 12〜14;
ZrO2 3〜6;
B2O3 20〜27;
BaO 2〜15;
MgO 33〜36;
Li2O 1〜3;
P2O5 3〜8;
Cs2O 0〜2。
ガラスの好ましい組成は、質量%で:
SiO2 13.77;
ZrO2 4.70;
B2O3 26.10;
BaO 4.05;
MgO 35.09;
Li2O 1.95;
P2O5 4.34
である。自己束縛テープにおいて、フリットのD50(メジアン粒度)は、好ましくは0.1〜5.0マイクロメートル、より好ましくは0.3〜3.0マイクロメートルの範囲内であるが、それに限定されるものではない。
本発明の低温共焼成されるセラミック構造を用いて、機能性電子回路を形成することができる。1つの実施形態において、本発明の回路は、10ピコファラドから100ナノファラドまでの値を与える内部すなわち埋込型キャパシタを含む。
101 キャパシタ
102 主テープ
103 自己束縛テープ
104 回路
105 高誘電率コア
Claims (10)
- 低温共焼成セラミック構造物を製造する方法であって、
コアテープの少なくとも1つの層を含む前駆体グリーン積層体を提供する工程であって、前記コアテープは少なくとも20の誘電率を有する工程と、
自己束縛テープの1つまたは複数の層を提供する工程と、
主テープの1つまたは複数の層を提供する工程と、
前記コアテープ、自己束縛テープおよび主テープの層を揃える工程と、
前記コアテープ、自己束縛テープおよび主テープの層を積層および共焼成して、前記セラミック構造物を提供する工程と
を含むことを特徴とする方法。 - 焼成中に、前記セラミック構造物がx−方向およびy−方向において収縮しないことを特徴とする請求項1に記載の方法。
- 前記前駆体グリーン積層体は、2〜10層のコアテープを含むことを特徴とする請求項1に記載の方法。
- 前記構造物は、10ピコファラドから100ナノファラドまでの値を与える内部キャパシタをさらに含むことを特徴とする請求項1に記載の方法。
- 前記高誘電率コアは、質量%で:
タングステン酸ニオブ酸鉛鉄固溶体の混合物30〜80%
チタン酸バリウム、酸化鉛およびフューズドシリカのか焼混合物20〜70%、チタン酸バリウム30〜50%
チタン酸バリウムのか焼混合物30〜50%、チタン酸バリウム、および
チタン酸バリウムのか焼混合物30〜50%、酸化鉛およびフューズドシリカ50〜80%、およびゲルマニウム酸鉛ガラス3〜20%
からなる群から選択される材料を含むことを特徴とする請求項1に記載の方法。 - 前記高誘電率コアテープは、質量%で、ニオブ酸鉛鉄およびタングステン酸鉛鉄の固溶体40%、BaTiO3、PbOおよびフューズドSiO2のか焼混合物40%、および有機媒質20%を含むことを特徴とする請求項1に記載の方法。
- 前記高誘電率コアテープは、質量%で、BaTiO366%、ゲルマニウム酸鉛ガラス4%、および有機媒質30%を含み、前記ゲルマニウム酸鉛ガラスは、質量%で、78.5%のPb3O4および21.5%のGeO2を含むことを特徴とする請求項1に記載の方法。
- 前記高誘電率コアテープは、質量%で、BaTiO3、Pb3O4およびBaOのか焼混合物70%、ゲルマニウム酸鉛ガラス10%、および有機媒質20%を含むことを特徴とする請求項1に記載の方法。
- 請求項1に記載の方法によって形成されることを特徴とする低温共焼成セラミック構造物。
- 請求項9に記載の低温共焼成セラミック構造物を含むことを特徴とする機能性回路。
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US11/043,552 | 2005-01-26 | ||
US11/043,552 US20060163768A1 (en) | 2005-01-26 | 2005-01-26 | Multi-component LTCC substrate with a core of high dielectric constant ceramic material and processes for the development thereof |
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KR20160105468A (ko) | 2014-02-04 | 2016-09-06 | 엔지케이 인슐레이터 엘티디 | 적층체, 적층 디바이스 및 이들의 제조 방법 |
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KR100674842B1 (ko) * | 2005-03-07 | 2007-01-26 | 삼성전기주식회사 | 기판 내장용 적층형 칩 커패시터를 구비하는 인쇄회로 기판 |
US7611645B2 (en) * | 2005-04-25 | 2009-11-03 | E. I. Du Pont De Nemours And Company | Thick film conductor compositions and the use thereof in LTCC circuits and devices |
US20130043067A1 (en) * | 2011-08-17 | 2013-02-21 | Kyocera Corporation | Wire Substrate Structure |
JP6258347B2 (ja) * | 2013-10-29 | 2018-01-10 | 京セラ株式会社 | 配線基板およびこれを用いた実装構造体 |
CN107250081B (zh) * | 2015-02-27 | 2020-09-11 | 费罗公司 | 低k值和中k值ltcc介电组合物及装置 |
CN111499394A (zh) * | 2020-04-22 | 2020-08-07 | 上海晶材新材料科技有限公司 | 一种低温共烧陶瓷生料带及其制备方法 |
CN114225715B (zh) * | 2021-11-17 | 2022-09-20 | 华南理工大学 | 一种高性能非对称陶瓷过滤膜及其制备方法 |
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CN1891454A (zh) | 2007-01-10 |
JP5032772B2 (ja) | 2012-09-26 |
KR100756813B1 (ko) | 2007-09-07 |
US20060163768A1 (en) | 2006-07-27 |
TW200639134A (en) | 2006-11-16 |
EP1686100A1 (en) | 2006-08-02 |
KR20060086324A (ko) | 2006-07-31 |
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