JP2006179887A5 - - Google Patents
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- JP2006179887A5 JP2006179887A5 JP2005342585A JP2005342585A JP2006179887A5 JP 2006179887 A5 JP2006179887 A5 JP 2006179887A5 JP 2005342585 A JP2005342585 A JP 2005342585A JP 2005342585 A JP2005342585 A JP 2005342585A JP 2006179887 A5 JP2006179887 A5 JP 2006179887A5
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- JP
- Japan
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/998,289 US7402520B2 (en) | 2004-11-26 | 2004-11-26 | Edge removal of silicon-on-insulator transfer wafer |
| US10/998289 | 2004-11-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009171458A Division JP2009283964A (ja) | 2004-11-26 | 2009-07-22 | シリコン・オン・インシュレータ搬送ウエハのエッジ除去 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006179887A JP2006179887A (ja) | 2006-07-06 |
| JP2006179887A5 true JP2006179887A5 (enExample) | 2009-09-10 |
| JP5455282B2 JP5455282B2 (ja) | 2014-03-26 |
Family
ID=36113834
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005342585A Expired - Lifetime JP5455282B2 (ja) | 2004-11-26 | 2005-11-28 | シリコン・オン・インシュレータ搬送ウエハのエッジ除去 |
| JP2009171458A Pending JP2009283964A (ja) | 2004-11-26 | 2009-07-22 | シリコン・オン・インシュレータ搬送ウエハのエッジ除去 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009171458A Pending JP2009283964A (ja) | 2004-11-26 | 2009-07-22 | シリコン・オン・インシュレータ搬送ウエハのエッジ除去 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7402520B2 (enExample) |
| EP (2) | EP1662560B1 (enExample) |
| JP (2) | JP5455282B2 (enExample) |
| TW (2) | TWI333259B (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7402520B2 (en) * | 2004-11-26 | 2008-07-22 | Applied Materials, Inc. | Edge removal of silicon-on-insulator transfer wafer |
| US20070148917A1 (en) * | 2005-12-22 | 2007-06-28 | Sumco Corporation | Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer |
| JP4913484B2 (ja) * | 2006-06-28 | 2012-04-11 | 株式会社ディスコ | 半導体ウエーハの研磨加工方法 |
| KR100839355B1 (ko) * | 2006-11-28 | 2008-06-19 | 삼성전자주식회사 | 기판의 재생 방법 |
| EP2015354A1 (en) | 2007-07-11 | 2009-01-14 | S.O.I.Tec Silicon on Insulator Technologies | Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate |
| US8089055B2 (en) * | 2008-02-05 | 2012-01-03 | Adam Alexander Brailove | Ion beam processing apparatus |
| US8192822B2 (en) * | 2008-03-31 | 2012-06-05 | Memc Electronic Materials, Inc. | Edge etched silicon wafers |
| US7833907B2 (en) * | 2008-04-23 | 2010-11-16 | International Business Machines Corporation | CMP methods avoiding edge erosion and related wafer |
| US20100022070A1 (en) * | 2008-07-22 | 2010-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
| JP5478166B2 (ja) * | 2008-09-11 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20110099108A (ko) * | 2008-11-19 | 2011-09-06 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 반도체 웨이퍼의 에지를 스트리핑하기 위한 방법 및 시스템 |
| EP2213415A1 (en) | 2009-01-29 | 2010-08-04 | S.O.I. TEC Silicon | Device for polishing the edge of a semiconductor substrate |
| EP2219208B1 (en) * | 2009-02-12 | 2012-08-29 | Soitec | Method for reclaiming a surface of a substrate |
| US8871109B2 (en) * | 2009-04-28 | 2014-10-28 | Gtat Corporation | Method for preparing a donor surface for reuse |
| EP2246882B1 (en) | 2009-04-29 | 2015-03-04 | Soitec | Method for transferring a layer from a donor substrate onto a handle substrate |
| KR20120032487A (ko) * | 2009-06-24 | 2012-04-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 재생 처리 및 soi 기판의 제작 방법 |
| DE102009030298B4 (de) * | 2009-06-24 | 2012-07-12 | Siltronic Ag | Verfahren zur lokalen Politur einer Halbleiterscheibe |
| EP2461359B1 (en) * | 2009-07-10 | 2017-02-08 | Shanghai Simgui Technology Co., Ltd | Method for forming substrate with insulating buried layer |
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| FR2950733B1 (fr) * | 2009-09-25 | 2012-10-26 | Commissariat Energie Atomique | Procede de planarisation par ultrasons d'un substrat dont une surface a ete liberee par fracture d'une couche enterree fragilisee |
| KR101731809B1 (ko) * | 2009-10-09 | 2017-05-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 재생 방법, 재생된 반도체 기판의 제조 방법, 및 soi 기판의 제조 방법 |
| FR2952224B1 (fr) * | 2009-10-30 | 2012-04-20 | Soitec Silicon On Insulator | Procede de controle de la repartition des contraintes dans une structure de type semi-conducteur sur isolant et structure correspondante. |
| FR2953988B1 (fr) * | 2009-12-11 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de detourage d'un substrat chanfreine. |
| FR2956822A1 (fr) * | 2010-02-26 | 2011-09-02 | Soitec Silicon On Insulator Technologies | Procede d'elimination de fragments de materiau presents sur la surface d'une structure multicouche |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| JP5799740B2 (ja) * | 2011-10-17 | 2015-10-28 | 信越半導体株式会社 | 剥離ウェーハの再生加工方法 |
| JP2013115307A (ja) * | 2011-11-30 | 2013-06-10 | Sumitomo Electric Ind Ltd | Iii族窒化物複合基板の製造方法 |
| US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
| JP2016046341A (ja) * | 2014-08-21 | 2016-04-04 | 株式会社荏原製作所 | 研磨方法 |
| JP6086754B2 (ja) * | 2013-02-25 | 2017-03-01 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2014167996A (ja) * | 2013-02-28 | 2014-09-11 | Ebara Corp | 研磨装置および研磨方法 |
| JP6214901B2 (ja) * | 2013-04-04 | 2017-10-18 | 株式会社ディスコ | 切削装置 |
| US10464184B2 (en) * | 2014-05-07 | 2019-11-05 | Applied Materials, Inc. | Modifying substrate thickness profiles |
| US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
| JP6723892B2 (ja) * | 2016-10-03 | 2020-07-15 | 株式会社ディスコ | ウエーハの加工方法 |
| FR3074608B1 (fr) * | 2017-12-05 | 2019-12-06 | Soitec | Procede de preparation d'un residu de substrat donneur, substrat obtenu a l'issu de ce procede, et utilisation d'un tel susbtrat |
| TWI735275B (zh) * | 2020-07-03 | 2021-08-01 | 聯華電子股份有限公司 | 半導體結構的製作方法 |
| CN112959211B (zh) * | 2021-02-22 | 2021-12-31 | 长江存储科技有限责任公司 | 晶圆处理装置和处理方法 |
| FR3120159B1 (fr) | 2021-02-23 | 2023-06-23 | Soitec Silicon On Insulator | Procédé de préparation du résidu d’un substrat donneur ayant subi un prélèvement d’une couche par délamination |
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| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JP2839801B2 (ja) | 1992-09-18 | 1998-12-16 | 三菱マテリアル株式会社 | ウェーハの製造方法 |
| US5770465A (en) * | 1995-06-23 | 1998-06-23 | Cornell Research Foundation, Inc. | Trench-filling etch-masking microfabrication technique |
| KR100227924B1 (ko) | 1995-07-28 | 1999-11-01 | 가이데 히사오 | 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치 |
| CN1132223C (zh) | 1995-10-06 | 2003-12-24 | 佳能株式会社 | 半导体衬底及其制造方法 |
| JPH09270401A (ja) | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの研磨方法 |
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| JP3321527B2 (ja) * | 1996-07-22 | 2002-09-03 | シャープ株式会社 | 半導体装置の製造方法 |
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| US6054363A (en) | 1996-11-15 | 2000-04-25 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
| US5821166A (en) | 1996-12-12 | 1998-10-13 | Komatsu Electronic Metals Co., Ltd. | Method of manufacturing semiconductor wafers |
| JPH10256498A (ja) * | 1997-03-06 | 1998-09-25 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
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| US5920764A (en) | 1997-09-30 | 1999-07-06 | International Business Machines Corporation | Process for restoring rejected wafers in line for reuse as new |
| SG71903A1 (en) | 1998-01-30 | 2000-04-18 | Canon Kk | Process of reclamation of soi substrate and reproduced substrate |
| JP3271658B2 (ja) | 1998-03-23 | 2002-04-02 | 信越半導体株式会社 | 半導体シリコン単結晶ウェーハのラップ又は研磨方法 |
| US6200199B1 (en) | 1998-03-31 | 2001-03-13 | Applied Materials, Inc. | Chemical mechanical polishing conditioner |
| JP3932369B2 (ja) | 1998-04-09 | 2007-06-20 | 信越半導体株式会社 | 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ |
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| JP3358550B2 (ja) | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
| US6246667B1 (en) | 1998-09-02 | 2001-06-12 | Lucent Technologies Inc. | Backwards-compatible failure restoration in bidirectional multiplex section-switched ring transmission systems |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
| US6276997B1 (en) | 1998-12-23 | 2001-08-21 | Shinhwa Li | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers |
| JP2000223682A (ja) | 1999-02-02 | 2000-08-11 | Canon Inc | 基体の処理方法及び半導体基板の製造方法 |
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| US20020164876A1 (en) * | 2000-04-25 | 2002-11-07 | Walitzki Hans S. | Method for finishing polysilicon or amorphous substrate structures |
| JP3991300B2 (ja) * | 2000-04-28 | 2007-10-17 | 株式会社Sumco | 張り合わせ誘電体分離ウェーハの製造方法 |
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| JP3911174B2 (ja) * | 2002-03-01 | 2007-05-09 | シャープ株式会社 | 半導体素子の製造方法および半導体素子 |
| FR2842648B1 (fr) | 2002-07-18 | 2005-01-14 | Commissariat Energie Atomique | Procede de transfert d'une couche mince electriquement active |
| JP2004087522A (ja) * | 2002-08-22 | 2004-03-18 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの製造方法 |
| TWI233154B (en) * | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
| EP2091075A2 (en) * | 2002-12-06 | 2009-08-19 | S.O.I.TEC Silicon on Insulator Technologies S.A. | A method for recycling a surface of a substrate using local thinning |
| JP4125148B2 (ja) * | 2003-02-03 | 2008-07-30 | 株式会社荏原製作所 | 基板処理装置 |
| JP3534115B1 (ja) * | 2003-04-02 | 2004-06-07 | 住友電気工業株式会社 | エッジ研磨した窒化物半導体基板とエッジ研磨したGaN自立基板及び窒化物半導体基板のエッジ加工方法 |
| JP4492054B2 (ja) | 2003-08-28 | 2010-06-30 | 株式会社Sumco | 剥離ウェーハの再生処理方法及び再生されたウェーハ |
| JP2005072070A (ja) | 2003-08-28 | 2005-03-17 | Sumitomo Mitsubishi Silicon Corp | 剥離ウェーハの再生処理方法及び再生されたウェーハ |
| US7276787B2 (en) * | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
| US7402520B2 (en) | 2004-11-26 | 2008-07-22 | Applied Materials, Inc. | Edge removal of silicon-on-insulator transfer wafer |
| JP2007019323A (ja) | 2005-07-08 | 2007-01-25 | Shin Etsu Handotai Co Ltd | ボンドウエーハの再生方法及びボンドウエーハ並びにssoiウエーハの製造方法 |
| JP4715470B2 (ja) | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
| JP5314838B2 (ja) | 2006-07-14 | 2013-10-16 | 信越半導体株式会社 | 剥離ウェーハを再利用する方法 |
| KR100839355B1 (ko) | 2006-11-28 | 2008-06-19 | 삼성전자주식회사 | 기판의 재생 방법 |
-
2004
- 2004-11-26 US US10/998,289 patent/US7402520B2/en not_active Expired - Lifetime
-
2005
- 2005-11-23 TW TW097114902A patent/TWI333259B/zh active
- 2005-11-23 TW TW094141169A patent/TWI364814B/zh active
- 2005-11-24 EP EP05257236.9A patent/EP1662560B1/en not_active Expired - Lifetime
- 2005-11-24 EP EP08022218A patent/EP2048701A3/en not_active Withdrawn
- 2005-11-28 JP JP2005342585A patent/JP5455282B2/ja not_active Expired - Lifetime
-
2008
- 2008-02-19 US US12/033,727 patent/US7951718B2/en active Active
- 2008-07-22 US US12/177,752 patent/US7749908B2/en not_active Expired - Lifetime
-
2009
- 2009-07-22 JP JP2009171458A patent/JP2009283964A/ja active Pending