JP2006165530A - センサ及び非平面撮像装置 - Google Patents

センサ及び非平面撮像装置 Download PDF

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Publication number
JP2006165530A
JP2006165530A JP2005325368A JP2005325368A JP2006165530A JP 2006165530 A JP2006165530 A JP 2006165530A JP 2005325368 A JP2005325368 A JP 2005325368A JP 2005325368 A JP2005325368 A JP 2005325368A JP 2006165530 A JP2006165530 A JP 2006165530A
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Japan
Prior art keywords
film
amorphous oxide
sensor
amorphous
substrate
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Pending
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JP2005325368A
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English (en)
Japanese (ja)
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JP2006165530A5 (https=
Inventor
Keishi Saito
恵志 斉藤
Hideo Hosono
秀雄 細野
Toshio Kamiya
利夫 神谷
Kenji Nomura
研二 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Tokyo Institute of Technology NUC
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Canon Inc
Tokyo Institute of Technology NUC
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Application filed by Canon Inc, Tokyo Institute of Technology NUC filed Critical Canon Inc
Priority to JP2005325368A priority Critical patent/JP2006165530A/ja
Publication of JP2006165530A publication Critical patent/JP2006165530A/ja
Publication of JP2006165530A5 publication Critical patent/JP2006165530A5/ja
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP2005325368A 2004-11-10 2005-11-09 センサ及び非平面撮像装置 Pending JP2006165530A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005325368A JP2006165530A (ja) 2004-11-10 2005-11-09 センサ及び非平面撮像装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004326681 2004-11-10
JP2005325368A JP2006165530A (ja) 2004-11-10 2005-11-09 センサ及び非平面撮像装置

Related Child Applications (1)

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JP2012065329A Division JP2012142600A (ja) 2004-11-10 2012-03-22 センサ及び非平面撮像装置

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JP2006165530A true JP2006165530A (ja) 2006-06-22
JP2006165530A5 JP2006165530A5 (https=) 2008-12-25

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JP2005325368A Pending JP2006165530A (ja) 2004-11-10 2005-11-09 センサ及び非平面撮像装置

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Cited By (36)

* Cited by examiner, † Cited by third party
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WO2007058232A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
WO2008072486A1 (ja) 2006-12-13 2008-06-19 Idemitsu Kosan Co., Ltd. スパッタリングターゲット及び酸化物半導体膜
JP2008182209A (ja) * 2006-12-27 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびそれを用いた電子機器
JP2009032854A (ja) * 2007-07-26 2009-02-12 Fujifilm Corp 放射線撮像素子
JP2009089351A (ja) * 2007-09-13 2009-04-23 Fujifilm Corp カプセル型内視鏡
JP2009094465A (ja) * 2007-09-21 2009-04-30 Fujifilm Corp 放射線撮像素子
WO2009151003A1 (ja) 2008-06-10 2009-12-17 日鉱金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
EP2157615A1 (en) 2008-08-19 2010-02-24 Fujifilm Corporation Thin film transistor, active matrix substrate, and image pickup device
JPWO2008139860A1 (ja) * 2007-05-07 2010-07-29 出光興産株式会社 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
EP2328177A2 (en) 2009-11-27 2011-06-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
JP2011119711A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011119710A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその動作方法
WO2011086940A1 (ja) * 2010-01-15 2011-07-21 出光興産株式会社 Ｉｎ－Ｇａ－Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
JP2011146713A (ja) * 2010-01-15 2011-07-28 Samsung Electronics Co Ltd 表示基板
JP2011166751A (ja) * 2010-01-15 2011-08-25 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
US8008627B2 (en) 2007-09-21 2011-08-30 Fujifilm Corporation Radiation imaging element
JP2011243745A (ja) * 2010-05-18 2011-12-01 Fujifilm Corp 薄膜トランジスタの製造方法、並びに、薄膜トランジスタ、イメージセンサー、ｘ線センサー及びｘ線デジタル撮影装置
US8153031B2 (en) 2007-05-11 2012-04-10 Idemitsu Kosan Co., Ltd. In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
US8194469B2 (en) 2008-01-31 2012-06-05 Sony Corporation Optical sensor element, imaging device, electronic equipment and memory element
EP2341542A3 (en) * 2009-12-29 2012-09-19 Samsung Electronics Co., Ltd. Image sensor using light-sensitive transparent oxide semiconductor material
WO2012124444A1 (ja) * 2011-03-11 2012-09-20 富士フイルム株式会社 薄膜トランジスタの製造方法、薄膜トランジスタ、表示装置、センサ及びｘ線デジタル撮影装置
US8344329B2 (en) 2009-12-09 2013-01-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
US8669626B2 (en) 2009-12-01 2014-03-11 Fujifilm Corporation Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
US8748879B2 (en) 2007-05-08 2014-06-10 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and a method for producing the same
JP2014195060A (ja) * 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd センサ回路及びセンサ回路を用いた半導体装置
JP2015181172A (ja) * 2010-02-19 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
JP2017073572A (ja) * 2011-07-15 2017-04-13 株式会社半導体エネルギー研究所 イメージセンサ
JPWO2016114377A1 (ja) * 2015-01-16 2017-04-27 雫石　誠 半導体素子とその製造方法
CN108258102A (zh) * 2018-01-30 2018-07-06 奕瑞新材料科技（太仓）有限公司 非晶硅光电二极管模组
JP2018129542A (ja) * 2011-05-05 2018-08-16 株式会社半導体エネルギー研究所 半導体装置
CN109073942A (zh) * 2016-01-14 2018-12-21 鸿富锦精密工业（深圳）有限公司 薄膜晶体管阵列面板
US10439069B2 (en) 2015-08-10 2019-10-08 Nlt Technologies, Ltd. Optical sensor element and photoelectric conversion device
JP2020004922A (ja) * 2018-07-02 2020-01-09 セイコーエプソン株式会社 光電変換装置、電子機器および光電変換装置の製造方法
US10615201B2 (en) 2016-02-26 2020-04-07 Tianma Microelectronics Co., Ltd. Image sensor and method of manufacturing the same
JP2020513684A (ja) * 2016-11-14 2020-05-14 アルマ マータ ストゥディオルム−ウニベルシータ ディ ボローニャＡｌｍａ Ｍａｔｅｒ Ｓｔｕｄｉｏｒｕｍ − Ｕｎｉｖｅｒｓｉｔａ’ Ｄｉ Ｂｏｌｏｇｎａ 感応性電界効果デバイス及びその製造方法
CN112020328A (zh) * 2018-04-26 2020-12-01 瓦里安医疗系统公司 成像设备

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JP2002299678A (ja) * 2001-03-29 2002-10-11 Fuji Photo Film Co Ltd 高感度受光素子及び光センサー
JP2004119525A (ja) * 2002-09-24 2004-04-15 Japan Science & Technology Corp 酸化物半導体ｐｎ接合デバイス
WO2005088726A1 (ja) * 2004-03-12 2005-09-22 Japan Science And Technology Agency アモルファス酸化物及び薄膜トランジスタ

Patent Citations (5)

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JP2000044236A (ja) * 1998-07-24 2000-02-15 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2001085077A (ja) * 1999-09-14 2001-03-30 Fuji Xerox Co Ltd 光電変換素子およびその製造方法
JP2002299678A (ja) * 2001-03-29 2002-10-11 Fuji Photo Film Co Ltd 高感度受光素子及び光センサー
JP2004119525A (ja) * 2002-09-24 2004-04-15 Japan Science & Technology Corp 酸化物半導体ｐｎ接合デバイス
WO2005088726A1 (ja) * 2004-03-12 2005-09-22 Japan Science And Technology Agency アモルファス酸化物及び薄膜トランジスタ

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US7906777B2 (en) 2005-11-18 2011-03-15 Idemitsu Kosan Co., Ltd. Semiconductor thin film and method for manufacturing same, and thin film transistor
WO2007058232A1 (ja) * 2005-11-18 2007-05-24 Idemitsu Kosan Co., Ltd. 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
WO2008072486A1 (ja) 2006-12-13 2008-06-19 Idemitsu Kosan Co., Ltd. スパッタリングターゲット及び酸化物半導体膜
EP2669402A1 (en) 2006-12-13 2013-12-04 Idemitsu Kosan Co., Ltd. Sputtering target and oxide semiconductor film
US8784700B2 (en) 2006-12-13 2014-07-22 Idemitsu Kosan Co., Ltd. Sputtering target and oxide semiconductor film
EP2471972A1 (en) 2006-12-13 2012-07-04 Idemitsu Kosan Co., Ltd. Sputtering target
JP2008182209A (ja) * 2006-12-27 2008-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびそれを用いた電子機器
US9249032B2 (en) 2007-05-07 2016-02-02 Idemitsu Kosan Co., Ltd. Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
JPWO2008139860A1 (ja) * 2007-05-07 2010-07-29 出光興産株式会社 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
US8748879B2 (en) 2007-05-08 2014-06-10 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and a method for producing the same
US8153031B2 (en) 2007-05-11 2012-04-10 Idemitsu Kosan Co., Ltd. In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
JP2009032854A (ja) * 2007-07-26 2009-02-12 Fujifilm Corp 放射線撮像素子
JP2009089351A (ja) * 2007-09-13 2009-04-23 Fujifilm Corp カプセル型内視鏡
JP2009094465A (ja) * 2007-09-21 2009-04-30 Fujifilm Corp 放射線撮像素子
US8008627B2 (en) 2007-09-21 2011-08-30 Fujifilm Corporation Radiation imaging element
US8194469B2 (en) 2008-01-31 2012-06-05 Sony Corporation Optical sensor element, imaging device, electronic equipment and memory element
WO2009151003A1 (ja) 2008-06-10 2009-12-17 日鉱金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
US8134151B2 (en) 2008-08-19 2012-03-13 Fujifilm Corporation Thin film transistor, active matrix substrate, and image pickup device
EP2157615A1 (en) 2008-08-19 2010-02-24 Fujifilm Corporation Thin film transistor, active matrix substrate, and image pickup device
JP6993535B1 (ja) 2009-11-06 2022-02-03 株式会社半導体エネルギー研究所 イメージセンサ
JP2013093594A (ja) * 2009-11-06 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2019024126A (ja) * 2009-11-06 2019-02-14 株式会社半導体エネルギー研究所 光電変換装置
JP2022032053A (ja) * 2009-11-06 2022-02-24 株式会社半導体エネルギー研究所 イメージセンサ
JP2011119710A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその動作方法
US9773814B2 (en) 2009-11-06 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916869B2 (en) 2009-11-06 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
US9331112B2 (en) 2009-11-06 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor layer
JP2011119711A (ja) * 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
US9117713B2 (en) 2009-11-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a gate of an amplifier transistor under an insulating layer and a transfer transistor channel over the insulating layer the amplifier transistor and transfer transistor overlapping
US9905596B2 (en) 2009-11-06 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a channel region of a transistor with a crystalline oxide semiconductor and a specific off-state current for the transistor
JP2011114229A (ja) * 2009-11-27 2011-06-09 Fujifilm Corp 放射線センサおよび放射線画像撮影装置
US8354645B2 (en) 2009-11-27 2013-01-15 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
EP2328177A2 (en) 2009-11-27 2011-06-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
US8669626B2 (en) 2009-12-01 2014-03-11 Fujifilm Corporation Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
US8344329B2 (en) 2009-12-09 2013-01-01 Fujifilm Corporation Radiation sensor and radiation image detection apparatus
US8455933B2 (en) 2009-12-29 2013-06-04 Samsung Electronics Co., Ltd. Image sensor using light-sensitive transparent oxide semiconductor material
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JP2011166751A (ja) * 2010-01-15 2011-08-25 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
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CN102652119B (zh) * 2010-01-15 2014-04-02 出光兴产株式会社 In-Ga-O系氧化物烧结体、靶、氧化物半导体薄膜以及它们的制造方法
US10439067B2 (en) 2010-01-15 2019-10-08 Samsung Display Co., Ltd. Display substrate including thin film transistors having a multilayered oxide semiconductor pattern
US9159745B2 (en) 2010-01-15 2015-10-13 Samsung Display Co., Ltd. Display substrate
JP2011146713A (ja) * 2010-01-15 2011-07-28 Samsung Electronics Co Ltd 表示基板
JP2011146571A (ja) * 2010-01-15 2011-07-28 Idemitsu Kosan Co Ltd Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
US9871526B2 (en) 2010-01-15 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including analog/digital converter
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US9564534B2 (en) 2010-02-19 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device using the same
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JP2014195060A (ja) * 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd センサ回路及びセンサ回路を用いた半導体装置
JP2017168868A (ja) * 2015-01-16 2017-09-21 雫石　誠 半導体素子
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US10439069B2 (en) 2015-08-10 2019-10-08 Nlt Technologies, Ltd. Optical sensor element and photoelectric conversion device
CN109073942A (zh) * 2016-01-14 2018-12-21 鸿富锦精密工业（深圳）有限公司 薄膜晶体管阵列面板
US10615201B2 (en) 2016-02-26 2020-04-07 Tianma Microelectronics Co., Ltd. Image sensor and method of manufacturing the same
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US11360044B2 (en) 2016-11-14 2022-06-14 Universidade Nova De Lisboa Sensitive field effect device and manufacturing method thereof
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