JP2006156729A - コーティング膜の膜厚設計方法及び半導体光装置 - Google Patents

コーティング膜の膜厚設計方法及び半導体光装置 Download PDF

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Publication number
JP2006156729A
JP2006156729A JP2004345415A JP2004345415A JP2006156729A JP 2006156729 A JP2006156729 A JP 2006156729A JP 2004345415 A JP2004345415 A JP 2004345415A JP 2004345415 A JP2004345415 A JP 2004345415A JP 2006156729 A JP2006156729 A JP 2006156729A
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JP
Japan
Prior art keywords
wavelength
film
coating film
layer
optical device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004345415A
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English (en)
Japanese (ja)
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JP2006156729A5 (enExample
Inventor
Kimio Shigihara
君男 鴫原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004345415A priority Critical patent/JP2006156729A/ja
Priority to US11/281,364 priority patent/US20060115227A1/en
Publication of JP2006156729A publication Critical patent/JP2006156729A/ja
Publication of JP2006156729A5 publication Critical patent/JP2006156729A5/ja
Priority to US12/475,688 priority patent/US7941025B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2004345415A 2004-11-30 2004-11-30 コーティング膜の膜厚設計方法及び半導体光装置 Pending JP2006156729A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004345415A JP2006156729A (ja) 2004-11-30 2004-11-30 コーティング膜の膜厚設計方法及び半導体光装置
US11/281,364 US20060115227A1 (en) 2004-11-30 2005-11-18 Method of designing thickness of coating film and semiconductor photonic device
US12/475,688 US7941025B2 (en) 2004-11-30 2009-06-01 Semiconductor photonic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004345415A JP2006156729A (ja) 2004-11-30 2004-11-30 コーティング膜の膜厚設計方法及び半導体光装置

Publications (2)

Publication Number Publication Date
JP2006156729A true JP2006156729A (ja) 2006-06-15
JP2006156729A5 JP2006156729A5 (enExample) 2007-12-06

Family

ID=36567494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004345415A Pending JP2006156729A (ja) 2004-11-30 2004-11-30 コーティング膜の膜厚設計方法及び半導体光装置

Country Status (2)

Country Link
US (2) US20060115227A1 (enExample)
JP (1) JP2006156729A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7378692B1 (ja) * 2023-07-12 2023-11-13 三菱電機株式会社 光半導体装置の製造方法及び低反射率膜の設計方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8310679B2 (en) 2011-01-31 2012-11-13 Indian Institute Of Science Apparatus and methods for sensing or imaging using stacked thin films

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111799A (ja) * 1989-09-26 1991-05-13 Olympus Optical Co Ltd 多層膜分光器
JPH04350600A (ja) * 1991-05-28 1992-12-04 Olympus Optical Co Ltd Ｘ線用ハーフミラー
JPH05243689A (ja) * 1992-02-27 1993-09-21 Mitsubishi Electric Corp 半導体光素子
JPH07201859A (ja) * 1993-12-29 1995-08-04 Sony Corp 配線形成方法および半導体装置
JPH0845901A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置の製造方法
JPH0955351A (ja) * 1995-08-15 1997-02-25 Sony Corp 半導体装置の製造方法
JP2000114639A (ja) * 1998-10-01 2000-04-21 Sony Corp 半導体レーザ
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP2004111622A (ja) * 2002-09-18 2004-04-08 Mitsubishi Electric Corp 半導体レーザ素子
WO2004082085A1 (ja) * 2003-03-11 2004-09-23 Pioneer Corporation 多波長半導体レーザ装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729323A (en) * 1994-07-29 1998-03-17 Baush & Lomb Incorporated Light-absorbing and anti-reflective coating for sunglasses
JP2004289108A (ja) 2002-09-27 2004-10-14 Mitsubishi Electric Corp 半導体光素子
US6990283B2 (en) * 2003-02-15 2006-01-24 Electronics And Telecommnications Research Institute Polymeric optical device having low polarization dependence and method of fabricating the same

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111799A (ja) * 1989-09-26 1991-05-13 Olympus Optical Co Ltd 多層膜分光器
JPH04350600A (ja) * 1991-05-28 1992-12-04 Olympus Optical Co Ltd Ｘ線用ハーフミラー
JPH05243689A (ja) * 1992-02-27 1993-09-21 Mitsubishi Electric Corp 半導体光素子
JPH07201859A (ja) * 1993-12-29 1995-08-04 Sony Corp 配線形成方法および半導体装置
JPH0845901A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置の製造方法
JPH0955351A (ja) * 1995-08-15 1997-02-25 Sony Corp 半導体装置の製造方法
JP2000114639A (ja) * 1998-10-01 2000-04-21 Sony Corp 半導体レーザ
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP2004111622A (ja) * 2002-09-18 2004-04-08 Mitsubishi Electric Corp 半導体レーザ素子
WO2004082085A1 (ja) * 2003-03-11 2004-09-23 Pioneer Corporation 多波長半導体レーザ装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7378692B1 (ja) * 2023-07-12 2023-11-13 三菱電機株式会社 光半導体装置の製造方法及び低反射率膜の設計方法
WO2025013255A1 (ja) * 2023-07-12 2025-01-16 三菱電機株式会社 光半導体装置の製造方法及び低反射率膜の設計方法

Also Published As

Publication number Publication date
US20060115227A1 (en) 2006-06-01
US7941025B2 (en) 2011-05-10
US20090237798A1 (en) 2009-09-24

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