JP2006128227A5 - - Google Patents

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Publication number
JP2006128227A5
JP2006128227A5 JP2004311569A JP2004311569A JP2006128227A5 JP 2006128227 A5 JP2006128227 A5 JP 2006128227A5 JP 2004311569 A JP2004311569 A JP 2004311569A JP 2004311569 A JP2004311569 A JP 2004311569A JP 2006128227 A5 JP2006128227 A5 JP 2006128227A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
main surface
light emitting
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004311569A
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English (en)
Japanese (ja)
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JP2006128227A (ja
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Priority to JP2004311569A priority Critical patent/JP2006128227A/ja
Priority claimed from JP2004311569A external-priority patent/JP2006128227A/ja
Publication of JP2006128227A publication Critical patent/JP2006128227A/ja
Publication of JP2006128227A5 publication Critical patent/JP2006128227A5/ja
Pending legal-status Critical Current

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JP2004311569A 2004-10-26 2004-10-26 窒化物半導体発光素子 Pending JP2006128227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004311569A JP2006128227A (ja) 2004-10-26 2004-10-26 窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004311569A JP2006128227A (ja) 2004-10-26 2004-10-26 窒化物半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009286784A Division JP4803302B2 (ja) 2009-12-17 2009-12-17 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006128227A JP2006128227A (ja) 2006-05-18
JP2006128227A5 true JP2006128227A5 (enrdf_load_stackoverflow) 2007-06-14

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Family Applications (1)

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JP2004311569A Pending JP2006128227A (ja) 2004-10-26 2004-10-26 窒化物半導体発光素子

Country Status (1)

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JP (1) JP2006128227A (enrdf_load_stackoverflow)

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JP2006294907A (ja) * 2005-04-12 2006-10-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
KR100862516B1 (ko) * 2005-06-02 2008-10-08 삼성전기주식회사 발광 다이오드
JP2007123517A (ja) * 2005-10-27 2007-05-17 Toshiba Corp 半導体発光素子及び半導体発光装置
JP4968617B2 (ja) * 2005-11-11 2012-07-04 日亜化学工業株式会社 半導体発光素子及びその製造方法
KR100735470B1 (ko) * 2006-05-19 2007-07-03 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
WO2008060594A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
WO2008060586A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
TW201448263A (zh) 2006-12-11 2014-12-16 Univ California 透明發光二極體
JP5201566B2 (ja) * 2006-12-11 2013-06-05 豊田合成株式会社 化合物半導体発光素子及びその製造方法
JP2008227109A (ja) * 2007-03-12 2008-09-25 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP5178360B2 (ja) * 2007-09-14 2013-04-10 シャープ株式会社 窒化物半導体発光素子
DE102007046519A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
JP2009260237A (ja) * 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
WO2009126010A2 (ko) * 2008-04-12 2009-10-15 엘지이노텍주식회사 발광 소자
KR20090131351A (ko) * 2008-06-18 2009-12-29 주식회사 에피밸리 반도체 발광소자
JP5232972B2 (ja) 2008-10-20 2013-07-10 豊田合成株式会社 半導体発光素子及び半導体発光素子の製造方法
JP5627174B2 (ja) * 2008-11-26 2014-11-19 京セラ株式会社 発光素子
US8183575B2 (en) * 2009-01-26 2012-05-22 Bridgelux, Inc. Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
JP2010232642A (ja) * 2009-03-02 2010-10-14 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2010205910A (ja) 2009-03-03 2010-09-16 Toshiba Corp 半導体発光素子
JP2010232649A (ja) 2009-03-06 2010-10-14 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP5434288B2 (ja) * 2009-06-12 2014-03-05 豊田合成株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光素子を備えたランプ、照明装置および電子機器
KR20110040350A (ko) * 2009-10-14 2011-04-20 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR20110083292A (ko) * 2010-01-14 2011-07-20 주식회사 에피밸리 3족 질화물 반도체 발광소자
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5036840B2 (ja) * 2010-03-25 2012-09-26 株式会社東芝 発光素子
JP5381853B2 (ja) 2010-03-26 2014-01-08 豊田合成株式会社 半導体発光素子
JP5659966B2 (ja) * 2010-06-29 2015-01-28 日亜化学工業株式会社 半導体素子及びその製造方法
JP2012033537A (ja) 2010-07-28 2012-02-16 Toshiba Corp 発光素子
KR20120034910A (ko) * 2010-10-04 2012-04-13 삼성엘이디 주식회사 반도체 발광소자 및 이의 제조방법
JP2012094630A (ja) * 2010-10-26 2012-05-17 Toshiba Corp 半導体発光素子
JP5630276B2 (ja) * 2011-01-12 2014-11-26 豊田合成株式会社 半導体発光素子、半導体発光装置
TWI467805B (zh) * 2011-03-08 2015-01-01 Opto Tech Corp 具寬視角的發光二極體及其製造方法
JP5736930B2 (ja) * 2011-04-19 2015-06-17 日亜化学工業株式会社 半導体発光素子
JP4970611B2 (ja) * 2011-07-29 2012-07-11 株式会社東芝 半導体発光素子
GB201202222D0 (en) 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
JP5512735B2 (ja) * 2012-04-23 2014-06-04 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP2014170815A (ja) * 2013-03-01 2014-09-18 Ushio Inc Ｌｅｄ素子
CN103606606B (zh) * 2013-10-21 2016-04-06 溧阳市东大技术转移中心有限公司 形成电极键合结构的方法
CN103606609B (zh) * 2013-10-21 2016-08-17 溧阳市东大技术转移中心有限公司 一种发光二极管电极的制造方法
KR102404760B1 (ko) * 2015-07-24 2022-06-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
CN105655462B (zh) * 2015-12-31 2018-04-17 上海交通大学 高压直流氮化镓基发光二极管及其制造方法
US10396248B2 (en) * 2017-04-17 2019-08-27 Lumens Co., Ltd. Semiconductor light emitting diode
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
TWI736334B (zh) 2020-06-23 2021-08-11 隆達電子股份有限公司 發光二極體
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN114171648A (zh) * 2020-09-11 2022-03-11 成都辰显光电有限公司 微发光二极管芯片及其制备方法、显示面板
JP6994126B1 (ja) 2021-03-18 2022-01-14 聯嘉光電股▲ふん▼有限公司 多重の接触点を備える発光ダイオードチップ構造

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP2002016286A (ja) * 2000-06-27 2002-01-18 Sharp Corp 半導体発光素子
AU2003207287B2 (en) * 2002-01-28 2007-12-13 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method

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