JP2006080555A - 集積回路キャリヤを製造する方法 - Google Patents
集積回路キャリヤを製造する方法 Download PDFInfo
- Publication number
- JP2006080555A JP2006080555A JP2005308766A JP2005308766A JP2006080555A JP 2006080555 A JP2006080555 A JP 2006080555A JP 2005308766 A JP2005308766 A JP 2005308766A JP 2005308766 A JP2005308766 A JP 2005308766A JP 2006080555 A JP2006080555 A JP 2006080555A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- integrated circuit
- carrier
- receiving zone
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000007246 mechanism Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 206010052904 Musculoskeletal stiffness Diseases 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 27
- 239000007787 solid Substances 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 230000000930 thermomechanical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- LVROLHVSYNLFBE-UHFFFAOYSA-N 2,3,6-trichlorobiphenyl Chemical compound ClC1=CC=C(Cl)C(C=2C=CC=CC=2)=C1Cl LVROLHVSYNLFBE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
- Y10T29/49149—Assembling terminal to base by metal fusion bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/49222—Contact or terminal manufacturing by assembling plural parts forming array of contacts or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49789—Obtaining plural product pieces from unitary workpiece
- Y10T29/4979—Breaking through weakened portion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Thin Film Transistor (AREA)
- Die Bonding (AREA)
- Packaging Frangible Articles (AREA)
Abstract
【解決手段】集積回路キャリヤを製造する方法は、基板を提供することを含む。集積回路14を搭載するための少なくとも1つの受容ゾーン12は、基板の上で境界が定められる。複数のアイランド16画定部分は、受容ゾーンの各々を中心として配置されている。剛性低減機構40が、基板から材料を除去することによって近傍のアイランド画定部分との間に作成される。
【選択図】図8
Description
基板を提供するステップと、
基板上の集積回路のための少なくとも1つの受容ゾーンと、前記少なくとも1つの受容ゾーンを中心として配置される複数のアイランド画定部分の境界を定めるステップと、
基板から材料を除去することによって近傍のアイランド画定部分との間に剛性低減機構を作成するステップと、を含む集積回路キャリヤを製造する方法が提供される。
Claims (11)
- 基板を提供するステップと、
基板上の集積回路のための少なくとも1つの受容ゾーンと、前記少なくとも1つの受容ゾーンを中心として配置される複数のアイランド画定部分の境界を定めるステップと、
基板から材料を除去することによって近傍のアイランド画定部分との間に剛性低減機構を作成するステップと、
を含む集積回路キャリヤを製造する方法。 - 前記少なくとも1つの受容ゾーンで電気的コンタクトを形成し、各々のアイランド画定部分で、電気的な端子を形成することを含み、各々の電気的な端子が、電気的コンタクトのうちの1つまで回路層のトラックを介して電気的に接続されている請求項1に記載の方法。
- 基板上に金属層を堆積させることによって基板の表面上に回路層を形成することを含む請求項2に記載の方法。
- 基板の表面に加えられるマスクによって、前記少なくとも1つの受容ゾーンとアイランド画定部分の境界を定めることを含む請求項1に記載の方法。
- マスクを載せて基板を露光した後、基板を通してエッチングすることによって、剛性低減機構を作成するために基板の材料を除去することを含む請求項4に記載の方法。
- 基板を通してエッチングすることによって二次的剛性低減機構を作成することを含む請求項1に記載の方法。
- 絶縁層を備えた無ドープ・シリコンのウェーハから基板を形成することを含む請求項1に記載の方法。
- 基板に凹部を形成することによって前記少なくとも1つの受容ゾーンの境界を定めることを含む請求項1に記載の方法。
- 基板にエッチングすることによって凹部を形成することを含む請求項8に記載の方法。
- 基板を通して通路を形成することによって前記少なくとも1つの受容ゾーンの境界を定めることを含み、通路を囲む基板の領域が電気的コンタクトを支えている請求項2に記載の方法。
- 基板をエッチングすることによって通路を形成することを含む請求項10に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/693,484 US6775906B1 (en) | 2000-10-20 | 2000-10-20 | Method of manufacturing an integrated circuit carrier |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002537089A Division JP2004511920A (ja) | 2000-10-20 | 2001-10-19 | 集積回路キャリヤを製造する方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006080555A true JP2006080555A (ja) | 2006-03-23 |
JP2006080555A5 JP2006080555A5 (ja) | 2006-06-22 |
JP4658772B2 JP4658772B2 (ja) | 2011-03-23 |
Family
ID=24784853
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002537089A Pending JP2004511920A (ja) | 2000-10-20 | 2001-10-19 | 集積回路キャリヤを製造する方法 |
JP2005308766A Expired - Fee Related JP4658772B2 (ja) | 2000-10-20 | 2005-10-24 | 集積回路パッケージを製造する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002537089A Pending JP2004511920A (ja) | 2000-10-20 | 2001-10-19 | 集積回路キャリヤを製造する方法 |
Country Status (11)
Country | Link |
---|---|
US (10) | US6775906B1 (ja) |
EP (1) | EP1410701B1 (ja) |
JP (2) | JP2004511920A (ja) |
KR (1) | KR100619583B1 (ja) |
CN (1) | CN1235452C (ja) |
AT (1) | ATE410042T1 (ja) |
AU (2) | AU1363702A (ja) |
DE (1) | DE60136014D1 (ja) |
IL (2) | IL155460A0 (ja) |
WO (1) | WO2002034019A1 (ja) |
ZA (1) | ZA200303174B (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6775906B1 (en) * | 2000-10-20 | 2004-08-17 | Silverbrook Research Pty Ltd | Method of manufacturing an integrated circuit carrier |
US7221043B1 (en) * | 2000-10-20 | 2007-05-22 | Silverbrook Research Pty Ltd | Integrated circuit carrier with recesses |
US6890185B1 (en) * | 2003-11-03 | 2005-05-10 | Kulicke & Soffa Interconnect, Inc. | Multipath interconnect with meandering contact cantilevers |
JP2007053248A (ja) * | 2005-08-18 | 2007-03-01 | Tdk Corp | フレキシブル基板、実装構造、表示ユニット、及び携帯用電子機器 |
WO2010042653A1 (en) | 2008-10-07 | 2010-04-15 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
JP5689066B2 (ja) * | 2008-11-12 | 2015-03-25 | エムシー10 インコーポレイテッドMc10,Inc. | 高度に伸縮可能な電子部品 |
EP2902294B1 (en) * | 2008-11-12 | 2020-03-04 | Mc10, Inc. | Extremely stretchable electronics |
CN101909413A (zh) * | 2009-06-03 | 2010-12-08 | 鸿富锦精密工业(深圳)有限公司 | 金属网孔板、盖板制造方法及电子设备 |
US8837159B1 (en) | 2009-10-28 | 2014-09-16 | Amazon Technologies, Inc. | Low-profile circuit board assembly |
EP2570006A4 (en) * | 2010-05-12 | 2018-02-28 | Monolithe Semiconductor Inc. | Extendable network structure |
US8531014B2 (en) * | 2010-09-27 | 2013-09-10 | Infineon Technologies Ag | Method and system for minimizing carrier stress of a semiconductor device |
US8649820B2 (en) | 2011-11-07 | 2014-02-11 | Blackberry Limited | Universal integrated circuit card apparatus and related methods |
US8936199B2 (en) | 2012-04-13 | 2015-01-20 | Blackberry Limited | UICC apparatus and related methods |
USD703208S1 (en) | 2012-04-13 | 2014-04-22 | Blackberry Limited | UICC apparatus |
USD701864S1 (en) | 2012-04-23 | 2014-04-01 | Blackberry Limited | UICC apparatus |
US9226402B2 (en) | 2012-06-11 | 2015-12-29 | Mc10, Inc. | Strain isolation structures for stretchable electronics |
WO2014007871A1 (en) | 2012-07-05 | 2014-01-09 | Mc10, Inc. | Catheter device including flow sensing |
US9295842B2 (en) | 2012-07-05 | 2016-03-29 | Mc10, Inc. | Catheter or guidewire device including flow sensing and use thereof |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
US9082025B2 (en) | 2012-10-09 | 2015-07-14 | Mc10, Inc. | Conformal electronics integrated with apparel |
US9706647B2 (en) | 2013-05-14 | 2017-07-11 | Mc10, Inc. | Conformal electronics including nested serpentine interconnects |
KR20160040670A (ko) | 2013-08-05 | 2016-04-14 | 엠씨10, 인크 | 곡면부착형 전자기기를 포함하는 유연한 온도 센서 |
CA2925387A1 (en) | 2013-10-07 | 2015-04-16 | Mc10, Inc. | Conformal sensor systems for sensing and analysis |
KR102365120B1 (ko) | 2013-11-22 | 2022-02-18 | 메디데이타 솔루션즈, 인코포레이티드 | 심장 활동 감지 및 분석용 등각 센서 시스템 |
CA2935372C (en) | 2014-01-06 | 2023-08-08 | Mc10, Inc. | Encapsulated conformal electronic systems and devices, and methods of making and using the same |
KR20160129007A (ko) | 2014-03-04 | 2016-11-08 | 엠씨10, 인크 | 전자 디바이스를 위한 다부분 유연성 봉지 하우징 |
US9402312B2 (en) * | 2014-05-12 | 2016-07-26 | Invensas Corporation | Circuit assemblies with multiple interposer substrates, and methods of fabrication |
US9899330B2 (en) | 2014-10-03 | 2018-02-20 | Mc10, Inc. | Flexible electronic circuits with embedded integrated circuit die |
US10297572B2 (en) | 2014-10-06 | 2019-05-21 | Mc10, Inc. | Discrete flexible interconnects for modules of integrated circuits |
USD781270S1 (en) | 2014-10-15 | 2017-03-14 | Mc10, Inc. | Electronic device having antenna |
US10477354B2 (en) | 2015-02-20 | 2019-11-12 | Mc10, Inc. | Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation |
WO2016140961A1 (en) | 2015-03-02 | 2016-09-09 | Mc10, Inc. | Perspiration sensor |
US9741620B2 (en) | 2015-06-24 | 2017-08-22 | Invensas Corporation | Structures and methods for reliable packages |
US10653332B2 (en) | 2015-07-17 | 2020-05-19 | Mc10, Inc. | Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers |
US10709384B2 (en) | 2015-08-19 | 2020-07-14 | Mc10, Inc. | Wearable heat flux devices and methods of use |
CN112822840A (zh) | 2015-08-20 | 2021-05-18 | 苹果公司 | 具有电子部件阵列的基于织物的物品 |
US10910315B2 (en) | 2015-08-20 | 2021-02-02 | Apple Inc. | Fabric with embedded electrical components |
WO2017059215A1 (en) | 2015-10-01 | 2017-04-06 | Mc10, Inc. | Method and system for interacting with a virtual environment |
WO2017062508A1 (en) | 2015-10-05 | 2017-04-13 | Mc10, Inc. | Method and System for Neuromodulation and Stimulation |
CN108781313B (zh) | 2016-02-22 | 2022-04-08 | 美谛达解决方案公司 | 用以贴身获取传感器信息的耦接的集线器和传感器节点的系统、装置和方法 |
EP3420732B8 (en) | 2016-02-22 | 2020-12-30 | Medidata Solutions, Inc. | System, devices, and method for on-body data and power transmission |
CN109310340A (zh) | 2016-04-19 | 2019-02-05 | Mc10股份有限公司 | 用于测量汗液的方法和系统 |
US10447347B2 (en) | 2016-08-12 | 2019-10-15 | Mc10, Inc. | Wireless charger and high speed data off-loader |
US10799403B2 (en) | 2017-12-28 | 2020-10-13 | Stryker Corporation | Patient transport apparatus with controlled auxiliary wheel deployment |
US10779403B2 (en) | 2018-09-20 | 2020-09-15 | Apple Inc. | Shorting pattern between pads of a camera module |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258458A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | ウェーハ集積型集積回路 |
JPH0685010A (ja) * | 1992-09-02 | 1994-03-25 | Toshiba Corp | マルチチップモジュール |
JPH0945809A (ja) * | 1995-07-31 | 1997-02-14 | Fujitsu Ltd | 半導体装置及び半導体装置実装用基板 |
WO1998028793A1 (en) * | 1996-12-23 | 1998-07-02 | General Electric Company | Interface structures for electronic devices |
JPH11135675A (ja) * | 1997-10-30 | 1999-05-21 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
JPH11176870A (ja) * | 1997-12-16 | 1999-07-02 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
WO1999059206A2 (en) * | 1998-05-13 | 1999-11-18 | Koninklijke Philips Electronics N.V. | Semiconductor device and method for making the device |
WO1999065075A1 (fr) * | 1998-06-12 | 1999-12-16 | Hitachi, Ltd. | Dispositif semi-conducteur et procede correspondant |
JP2002110850A (ja) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | 半導体装置及び半導体装置搭載用配線基板 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3723176A (en) * | 1969-06-19 | 1973-03-27 | American Lava Corp | Alumina palladium composite |
US3670409A (en) * | 1970-11-19 | 1972-06-20 | Gte Automatic Electric Lab Inc | Planar receptacle |
US4426773A (en) * | 1981-05-15 | 1984-01-24 | General Electric Ceramics, Inc. | Array of electronic packaging substrates |
JPH0654798B2 (ja) | 1985-03-11 | 1994-07-20 | 沖電気工業株式会社 | 半導体集積回路装置の製造方法 |
US4802277A (en) * | 1985-04-12 | 1989-02-07 | Hughes Aircraft Company | Method of making a chip carrier slotted array |
JPS6169150A (ja) | 1985-09-06 | 1986-04-09 | Nec Corp | 半導体集積回路装置 |
JP2533511B2 (ja) * | 1987-01-19 | 1996-09-11 | 株式会社日立製作所 | 電子部品の接続構造とその製造方法 |
US5086337A (en) * | 1987-01-19 | 1992-02-04 | Hitachi, Ltd. | Connecting structure of electronic part and electronic device using the structure |
JPH01144652A (ja) | 1987-11-30 | 1989-06-06 | Nec Corp | 集積回路 |
US4967260A (en) * | 1988-05-04 | 1990-10-30 | International Electronic Research Corp. | Hermetic microminiature packages |
US4989063A (en) * | 1988-12-09 | 1991-01-29 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid wafer scale microcircuit integration |
US5045921A (en) * | 1989-12-26 | 1991-09-03 | Motorola, Inc. | Pad array carrier IC device using flexible tape |
US5148265A (en) * | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
EP0482247A1 (en) | 1990-10-26 | 1992-04-29 | International Business Machines Corporation | Method for producing an integrated circuit structure with a dense multilayer metallization pattern |
US5379191A (en) * | 1991-02-26 | 1995-01-03 | Microelectronics And Computer Technology Corporation | Compact adapter package providing peripheral to area translation for an integrated circuit chip |
US5173055A (en) * | 1991-08-08 | 1992-12-22 | Amp Incorporated | Area array connector |
US6568073B1 (en) * | 1991-11-29 | 2003-05-27 | Hitachi Chemical Company, Ltd. | Process for the fabrication of wiring board for electrical tests |
DE4342767A1 (de) * | 1993-12-15 | 1995-06-22 | Ant Nachrichtentech | Verfahren zur Herstellung einer quaderförmigen Vertiefung zur Aufnahme eines Bauelementes in einer Trägerplatte |
US5632631A (en) * | 1994-06-07 | 1997-05-27 | Tessera, Inc. | Microelectronic contacts with asperities and methods of making same |
US5802699A (en) * | 1994-06-07 | 1998-09-08 | Tessera, Inc. | Methods of assembling microelectronic assembly with socket for engaging bump leads |
US6361959B1 (en) * | 1994-07-07 | 2002-03-26 | Tessera, Inc. | Microelectronic unit forming methods and materials |
US5983492A (en) * | 1996-11-27 | 1999-11-16 | Tessera, Inc. | Low profile socket for microelectronic components and method for making the same |
US5810609A (en) * | 1995-08-28 | 1998-09-22 | Tessera, Inc. | Socket for engaging bump leads on a microelectronic device and methods therefor |
DE19534590A1 (de) | 1995-09-11 | 1997-03-13 | Laser & Med Tech Gmbh | Scanning Ablation von keramischen Werkstoffen, Kunststoffen und biologischen Hydroxylapatitmaterialien, insbesondere Zahnhartsubstanz |
DE69630107D1 (de) | 1996-04-15 | 2003-10-30 | St Microelectronics Srl | Mit einem EEPROM integrierter FLASH-EPROM |
JP2000512065A (ja) * | 1996-05-24 | 2000-09-12 | テセラ,インコーポレイテッド | 超小型電子素子のコネクタ |
JP2755252B2 (ja) * | 1996-05-30 | 1998-05-20 | 日本電気株式会社 | 半導体装置用パッケージ及び半導体装置 |
US6064576A (en) * | 1997-01-02 | 2000-05-16 | Texas Instruments Incorporated | Interposer having a cantilevered ball connection and being electrically connected to a printed circuit board |
US5796050A (en) | 1997-02-05 | 1998-08-18 | International Business Machines Corporation | Flexible board having adhesive in surface channels |
US6114763A (en) * | 1997-05-30 | 2000-09-05 | Tessera, Inc. | Semiconductor package with translator for connection to an external substrate |
US6313402B1 (en) * | 1997-10-29 | 2001-11-06 | Packard Hughes Interconnect Company | Stress relief bend useful in an integrated circuit redistribution patch |
DE19754874A1 (de) * | 1997-12-10 | 1999-06-24 | Siemens Ag | Verfahren zur Umformung eines Substrats mit Randkontakten in ein Ball Grid Array, nach diesem Verfahren hergestelltes Ball Grid Array und flexible Verdrahtung zur Umformung eines Substrats mit Randkontakten in ein Ball Grid Array |
US5973394A (en) * | 1998-01-23 | 1999-10-26 | Kinetrix, Inc. | Small contactor for test probes, chip packaging and the like |
JPH11284029A (ja) | 1998-03-27 | 1999-10-15 | Denso Corp | 電子部品の実装構造 |
JP3575324B2 (ja) | 1998-03-31 | 2004-10-13 | セイコーエプソン株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の実装方法 |
JP2000012732A (ja) | 1998-06-24 | 2000-01-14 | Rohm Co Ltd | Bga型半導体装置の構造 |
US6160715A (en) * | 1998-09-08 | 2000-12-12 | Lucent Technologies Inc. | Translator for recessed flip-chip package |
US6341071B1 (en) | 1999-03-19 | 2002-01-22 | International Business Machines Corporation | Stress relieved ball grid array package |
US6396143B1 (en) * | 1999-04-30 | 2002-05-28 | Mitsubishi Gas Chemical Company, Inc. | Ball grid array type printed wiring board having exellent heat diffusibility and printed wiring board |
US6078505A (en) | 1999-05-14 | 2000-06-20 | Triquint Semiconductor, Inc. | Circuit board assembly method |
US6365967B1 (en) * | 1999-05-25 | 2002-04-02 | Micron Technology, Inc. | Interconnect structure |
JP3494593B2 (ja) * | 1999-06-29 | 2004-02-09 | シャープ株式会社 | 半導体装置及び半導体装置用基板 |
US6524115B1 (en) * | 1999-08-20 | 2003-02-25 | 3M Innovative Properties Company | Compliant interconnect assembly |
JP2001094228A (ja) | 1999-09-22 | 2001-04-06 | Seiko Epson Corp | 半導体装置の実装構造 |
US6393143B1 (en) * | 1999-12-08 | 2002-05-21 | The United States Of America As Represented By The Secretary Of The Navy | Technique for estimating the pose of surface shapes using tripod operators |
US6775906B1 (en) * | 2000-10-20 | 2004-08-17 | Silverbrook Research Pty Ltd | Method of manufacturing an integrated circuit carrier |
US6507099B1 (en) * | 2000-10-20 | 2003-01-14 | Silverbrook Research Pty Ltd | Multi-chip integrated circuit carrier |
US6710457B1 (en) * | 2000-10-20 | 2004-03-23 | Silverbrook Research Pty Ltd | Integrated circuit carrier |
-
2000
- 2000-10-20 US US09/693,484 patent/US6775906B1/en not_active Expired - Fee Related
-
2001
- 2001-10-19 DE DE60136014T patent/DE60136014D1/de not_active Expired - Lifetime
- 2001-10-19 IL IL15546001A patent/IL155460A0/xx active IP Right Grant
- 2001-10-19 AU AU1363702A patent/AU1363702A/xx active Pending
- 2001-10-19 CN CNB018177603A patent/CN1235452C/zh not_active Expired - Fee Related
- 2001-10-19 JP JP2002537089A patent/JP2004511920A/ja active Pending
- 2001-10-19 KR KR1020037005531A patent/KR100619583B1/ko not_active IP Right Cessation
- 2001-10-19 AU AU2002213637A patent/AU2002213637B2/en not_active Ceased
- 2001-10-19 AT AT01981936T patent/ATE410042T1/de not_active IP Right Cessation
- 2001-10-19 WO PCT/AU2001/001334 patent/WO2002034019A1/en active IP Right Grant
- 2001-10-19 EP EP01981936A patent/EP1410701B1/en not_active Expired - Lifetime
-
2003
- 2003-04-15 IL IL155460A patent/IL155460A/en not_active IP Right Cessation
- 2003-04-24 ZA ZA200303174A patent/ZA200303174B/en unknown
-
2004
- 2004-07-19 US US10/893,379 patent/US7107674B2/en not_active Expired - Fee Related
- 2004-08-02 US US10/902,852 patent/US7154172B2/en not_active Expired - Fee Related
-
2005
- 2005-10-24 JP JP2005308766A patent/JP4658772B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-30 US US11/442,400 patent/US7402894B2/en not_active Expired - Fee Related
- 2006-11-03 US US11/592,209 patent/US7247941B2/en not_active Expired - Fee Related
-
2007
- 2007-06-05 US US11/758,644 patent/US7307354B2/en not_active Expired - Fee Related
- 2007-11-14 US US11/940,304 patent/US7479697B2/en not_active Expired - Fee Related
-
2008
- 2008-06-17 US US12/141,037 patent/US7767912B2/en not_active Expired - Fee Related
- 2008-11-23 US US12/276,390 patent/US7705452B2/en not_active Expired - Fee Related
-
2010
- 2010-04-22 US US12/765,690 patent/US7936063B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01258458A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | ウェーハ集積型集積回路 |
JPH0685010A (ja) * | 1992-09-02 | 1994-03-25 | Toshiba Corp | マルチチップモジュール |
JPH0945809A (ja) * | 1995-07-31 | 1997-02-14 | Fujitsu Ltd | 半導体装置及び半導体装置実装用基板 |
WO1998028793A1 (en) * | 1996-12-23 | 1998-07-02 | General Electric Company | Interface structures for electronic devices |
JPH11135675A (ja) * | 1997-10-30 | 1999-05-21 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
JPH11176870A (ja) * | 1997-12-16 | 1999-07-02 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
WO1999059206A2 (en) * | 1998-05-13 | 1999-11-18 | Koninklijke Philips Electronics N.V. | Semiconductor device and method for making the device |
WO1999065075A1 (fr) * | 1998-06-12 | 1999-12-16 | Hitachi, Ltd. | Dispositif semi-conducteur et procede correspondant |
JP2002110850A (ja) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | 半導体装置及び半導体装置搭載用配線基板 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4658772B2 (ja) | 集積回路パッケージを製造する方法 | |
JP2006080555A5 (ja) | ||
JP4528245B2 (ja) | 集積回路パッケージ | |
AU2002213637A1 (en) | Method of manufacturing an integrated circuit carrier | |
JP4528246B2 (ja) | マルチチップ集積回路パッケージ | |
JP2006080556A5 (ja) | ||
JP2006054493A5 (ja) | ||
US20110226520A1 (en) | Integrated circuit carrier assembly | |
AU2004203187B2 (en) | Method of reducing rigidity of a substrate | |
AU2004202249B2 (en) | Method of mounting an integrated circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060508 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090929 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100316 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101130 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101224 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees | ||
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |