JP2006065322A - キャパシタ及びキャパシタ装置 - Google Patents
キャパシタ及びキャパシタ装置 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title claims abstract description 138
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 abstract description 10
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 16
- 108091006146 Channels Proteins 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
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- H05B33/00—Electroluminescent light sources
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】 不純物がドーピングされた多結晶シリコン層と,前記多結晶シリコン層上に形成される第1絶縁層と,前記第1絶縁層上に,第1領域及び第2領域がそれぞれ分離されるように形成される第1金属層と,前記第1金属層上に形成される第2絶縁層と,前記第2絶縁層上に,前記第1金属層の第2領域と電気的に連結されるように形成される第2金属層とを備える。
【選択図】図5
Description
11,410 バッファー層
12,14 導電層
13 絶縁層
100 表示パネル
110 画素回路
200 走査駆動部
300 データ駆動部
421,421’,422,423,424,424c,424d,424s,426,426d 多結晶シリコン層
430 ゲート絶縁膜
441,442,443 電極線
445,446,447 電極
450 層間絶縁膜
451a,451b,451c,453a,453b,454,455,457,458 接触孔
461 電源電極線
463 データ線
465,467,468 連結電極線
470 平坦化膜
Claims (16)
- 不純物がドーピングされた多結晶シリコン層と,
前記多結晶シリコン層上に形成された第1絶縁層と,
前記第1絶縁層上に,第1領域と第2領域にそれぞれ分離されるように形成された第1金属層と,
前記第1金属層上に形成された第2絶縁層と,
前記第2絶縁層上に,前記第1金属層の第2領域と電気的に連結されるように形成された第2金属層と,
を備えたことを特徴とする,キャパシタ。 - 前記第2金属層は,前記第1金属層の第1領域の少なくとも一部の部分と,絶縁されながら重なるように形成されたことを特徴とする,請求項1に記載のキャパシタ。
- 基板上に形成されるキャパシタにおいて,
基板上に一体に形成された第1導電層と,
前記第1導電層上に形成された第1絶縁層と,
前記第1絶縁層上に,第1領域と第2領域にそれぞれ分離されるように形成された第2導電層と,
前記第2導電層上に形成された第2絶縁層と,
前記第2絶縁層上に,少なくとも前記第2導電層の第1領域と重なり,前記第2導電層の第2領域と電気的に連結されるように形成された第3導電層と,
を備え,
第1期間に,前記第1導電層と前記第3導電層に同じ電位が印加され,第2期間に,前記第3導電層には第1電位が印加され,前記第1導電層には前記第1電位とは異なる第2電位が印加されることを特徴とする,キャパシタ。 - 前記第1導電層は,不純物がドーピングされた多結晶シリコン層であることを特徴とする,請求項3に記載のキャパシタ。
- 前記第2導電層及び前記第3導電層は,金属電極層であることを特徴とする,請求項4に記載のキャパシタ。
- 前記第1導電層は,前記第1期間に遮断から導通に変化するスイッチング素子を通って前記第3導電層と電気的に連結されることを特徴とする,請求項4に記載のキャパシタ。
- 前記スイッチング素子は,ソースが前記第3導電層に電気的に連結され,ドレインが第1導電層に電気的に連結されるトランジスタであることを特徴とする,請求項6に記載のキャパシタ。
- 前記第1導電層は,前記第2期間に遮断から導通に変化するスイッチング素子を通って前記第2電位が印加されることを特徴とする,請求項4に記載のキャパシタ。
- 前記第1導電層は,前記第2期間に遮断から導通に変化するスイッチング素子を通って前記第2電位が印加されることを特徴とする,請求項5に記載のキャパシタ。
- 前記第1導電層は,前記第1期間に遮断から導通に変化するスイッチング素子を通って前記第3導電層と電気的に連結されることを特徴とする,請求項5に記載のキャパシタ。
- 第1電極及び前記第1電極から絶縁されて重なる第2電極を備えた第1キャパシタと;
前記第1電極と一体に形成された第3電極及び前記第3電極から絶縁されて重なる第4電極を備えた第2キャパシタと;
少なくとも前記第2電極から絶縁されて重なり,第4電極に電気的に連結して形成され,第1電位が印加される第5電極と前記第3電極を第1期間の間に電気的に連結する第1スイッチング素子と;
前記第1電位とは異なる第2電位が印加される第6電極と,前記第1電極を第2期間の間に電気的に連結する第2スイッチング素子と;
を備えたことを特徴とする,キャパシタ装置。 - 一体に形成された前記第1電極及び前記第3電極が,不純物でドーピングされた多結晶シリコン層を含んでなることを特徴とする,請求項11に記載のキャパシタ装置。
- 前記第1スイッチング素子は,ソースが前記第5電極に電気的に連結され,ドレインが前記第3電極に電気的に連結されたトランジスタであることを特徴とする,請求項11に記載のキャパシタ装置。
- 前記第2スイッチング素子は,ソースが前記第6電極に電気的に連結され,ドレインが前記第1電極に電気的に連結されたトランジスタであることを特徴とする,請求項11に記載のキャパシタ装置。
- 前記第1キャパシタは,
前記第1期間に,前記第1電極と前記第2電極とを含んでなる第3キャパシタと,前記第2電極と前記第5電極とを含んでなる第4キャパシタが並列的に連結されて作動することを特徴とする,請求項11に記載のキャパシタ装置。 - 前記第2キャパシタは,
前記第2期間に,前記第1電位と前記第2電位との差に相当する電圧が充電されることを特徴とする,請求項11に記載のキャパシタ装置。
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KR1020040067451A KR100670140B1 (ko) | 2004-08-26 | 2004-08-26 | 커패시터 |
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JP2006065322A true JP2006065322A (ja) | 2006-03-09 |
JP4382721B2 JP4382721B2 (ja) | 2009-12-16 |
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US (2) | US8895984B2 (ja) |
EP (1) | EP1630870B1 (ja) |
JP (1) | JP4382721B2 (ja) |
KR (1) | KR100670140B1 (ja) |
CN (1) | CN100403384C (ja) |
DE (1) | DE602005010795D1 (ja) |
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- 2005-08-24 DE DE602005010795T patent/DE602005010795D1/de active Active
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JP2014146041A (ja) * | 2006-10-26 | 2014-08-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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JP2021103322A (ja) * | 2006-10-26 | 2021-07-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
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Also Published As
Publication number | Publication date |
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CN100403384C (zh) | 2008-07-16 |
US9202852B2 (en) | 2015-12-01 |
JP4382721B2 (ja) | 2009-12-16 |
EP1630870B1 (en) | 2008-11-05 |
KR20060019022A (ko) | 2006-03-03 |
KR100670140B1 (ko) | 2007-01-16 |
CN1741114A (zh) | 2006-03-01 |
EP1630870A1 (en) | 2006-03-01 |
US20150076659A1 (en) | 2015-03-19 |
US20060043527A1 (en) | 2006-03-02 |
US8895984B2 (en) | 2014-11-25 |
DE602005010795D1 (de) | 2008-12-18 |
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