JP2006060044A - 磁気抵抗効果素子の製造方法 - Google Patents

磁気抵抗効果素子の製造方法 Download PDF

Info

Publication number
JP2006060044A
JP2006060044A JP2004240838A JP2004240838A JP2006060044A JP 2006060044 A JP2006060044 A JP 2006060044A JP 2004240838 A JP2004240838 A JP 2004240838A JP 2004240838 A JP2004240838 A JP 2004240838A JP 2006060044 A JP2006060044 A JP 2006060044A
Authority
JP
Japan
Prior art keywords
layer
magnetoresistive effect
manufacturing
effect element
mask material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004240838A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006060044A5 (enExample
Inventor
Daiki Maehara
大樹 前原
Tomoaki Osada
智明 長田
Mihoko Doi
美保子 土居
Koji Tsunekawa
孝二 恒川
Naoki Watanabe
直樹 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2004240838A priority Critical patent/JP2006060044A/ja
Priority to US11/161,675 priority patent/US7652852B2/en
Publication of JP2006060044A publication Critical patent/JP2006060044A/ja
Publication of JP2006060044A5 publication Critical patent/JP2006060044A5/ja
Priority to US12/117,753 priority patent/US7727409B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1164—Magnetic recording head with protective film
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
JP2004240838A 2004-08-20 2004-08-20 磁気抵抗効果素子の製造方法 Pending JP2006060044A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004240838A JP2006060044A (ja) 2004-08-20 2004-08-20 磁気抵抗効果素子の製造方法
US11/161,675 US7652852B2 (en) 2004-08-20 2005-08-11 Magnetoresistance effect device and a preform therefor
US12/117,753 US7727409B2 (en) 2004-08-20 2008-05-09 Magnetoresistance effect device and method of production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004240838A JP2006060044A (ja) 2004-08-20 2004-08-20 磁気抵抗効果素子の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008290578A Division JP2009081451A (ja) 2008-11-13 2008-11-13 磁気抵抗効果素子
JP2008290569A Division JP4448185B2 (ja) 2008-11-13 2008-11-13 磁気抵抗効果素子の製造方法

Publications (2)

Publication Number Publication Date
JP2006060044A true JP2006060044A (ja) 2006-03-02
JP2006060044A5 JP2006060044A5 (enExample) 2006-04-20

Family

ID=35908860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004240838A Pending JP2006060044A (ja) 2004-08-20 2004-08-20 磁気抵抗効果素子の製造方法

Country Status (2)

Country Link
US (2) US7652852B2 (enExample)
JP (1) JP2006060044A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
WO2009084445A1 (ja) * 2007-12-27 2009-07-09 Canon Anelva Corporation ドライエッチング方法、磁気抵抗効果素子とその製造方法及び製造装置
JP2009295737A (ja) * 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
WO2010084909A1 (ja) * 2009-01-21 2010-07-29 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置
JP2010182380A (ja) * 2009-02-06 2010-08-19 Fujitsu Ltd 成型加工品の製造方法、記憶媒体の製造方法、及び、情報記憶装置
JP2010182824A (ja) * 2009-02-04 2010-08-19 Toshiba Corp 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法
JP2012146726A (ja) * 2011-01-07 2012-08-02 Sony Corp 記憶素子及び記憶装置
JP2012244031A (ja) * 2011-05-23 2012-12-10 Sony Corp 記憶素子、記憶装置
JP2014039061A (ja) * 2013-10-24 2014-02-27 Renesas Electronics Corp 半導体装置の製造方法
JP2014052190A (ja) * 2012-09-04 2014-03-20 Ulvac Japan Ltd 抵抗測定方法
JPWO2012176747A1 (ja) * 2011-06-24 2015-02-23 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP2017212330A (ja) * 2016-05-25 2017-11-30 富士通株式会社 磁気記憶素子の製造方法および磁気記憶素子

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060044A (ja) * 2004-08-20 2006-03-02 Canon Anelva Corp 磁気抵抗効果素子の製造方法
US7838436B2 (en) * 2006-09-28 2010-11-23 Magic Technologies, Inc. Bottom electrode for MRAM device and method to fabricate it
JPWO2008129605A1 (ja) * 2007-03-30 2010-07-22 キヤノンアネルバ株式会社 磁性素子の製造法
US8679301B2 (en) * 2007-08-01 2014-03-25 HGST Netherlands B.V. Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
US8138561B2 (en) * 2008-09-18 2012-03-20 Magic Technologies, Inc. Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
JP5914007B2 (ja) * 2012-01-20 2016-05-11 昭和電工株式会社 磁気記録媒体の製造方法
JP5919183B2 (ja) 2012-12-17 2016-05-18 株式会社日立ハイテクノロジーズ プラズマエッチング方法
CN105470384A (zh) * 2015-12-31 2016-04-06 江苏森尼克电子科技有限公司 用于InSb磁敏器件的薄膜材料结构及制造工艺
US10593459B2 (en) * 2016-09-14 2020-03-17 Tdk Corporation Magnetoresistance effect device and magnetoresistance effect module
US10939756B2 (en) 2018-06-22 2021-03-09 Product Miniature, Inc. Modular shelf system
US11009570B2 (en) * 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer
JP7333752B2 (ja) * 2019-12-25 2023-08-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737824A (en) * 1972-08-11 1973-06-05 Nasa Twisted multifilament superconductor
US4421785A (en) * 1980-08-18 1983-12-20 Sperry Corporation Superconductive tunnel junction device and method of manufacture
JPS59168950A (ja) * 1983-03-17 1984-09-22 Ricoh Co Ltd 光磁気記録媒体
US4499119A (en) * 1983-07-06 1985-02-12 Sperry Corporation Method of manufacturing super-conductive tunnel junction devices with precise junction area control
KR100239417B1 (ko) * 1996-12-03 2000-01-15 김영환 반도체 소자의 커패시터 및 그의 제조방법
JP3131595B2 (ja) 1997-09-22 2001-02-05 科学技術庁金属材料技術研究所長 反応性イオンエッチング用のマスク
US6919168B2 (en) * 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6303218B1 (en) * 1998-03-20 2001-10-16 Kabushiki Kaisha Toshiba Multi-layered thin-film functional device and magnetoresistance effect element
US6277760B1 (en) * 1998-06-26 2001-08-21 Lg Electronics Inc. Method for fabricating ferroelectric capacitor
SG79292A1 (en) * 1998-12-11 2001-03-20 Hitachi Ltd Semiconductor integrated circuit and its manufacturing method
US6483691B1 (en) * 1999-02-04 2002-11-19 Rohm Co., Ltd. Capacitor and method for manufacturing the same
JP3959881B2 (ja) 1999-02-08 2007-08-15 Ｔｄｋ株式会社 磁気抵抗効果センサの製造方法
US6462919B1 (en) * 1999-04-28 2002-10-08 Seagate Technology Llc Spin valve sensor with exchange tabs
JP2001028442A (ja) 1999-05-12 2001-01-30 Matsushita Electric Ind Co Ltd 薄膜デバイス及び薄膜デバイスの製造方法
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP4605554B2 (ja) 2000-07-25 2011-01-05 独立行政法人物質・材料研究機構 ドライエッチング用マスク材
DE10042235A1 (de) * 2000-08-28 2002-04-18 Infineon Technologies Ag Verfahren zur Herstellung einer elektrisch leitenden Verbindung
JP2002109707A (ja) 2000-09-29 2002-04-12 Toshiba Corp ヨーク型磁気再生ヘッドおよびその製造方法ならびに磁気ディスク装置
US6518673B2 (en) * 2001-06-15 2003-02-11 Trw Inc. Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits
US6709767B2 (en) * 2001-07-31 2004-03-23 Hitachi Global Storage Technologies Netherlands B.V. In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
JP2003198002A (ja) * 2001-12-25 2003-07-11 Fujitsu Ltd 磁気抵抗効果膜および強磁性積層構造体
JP3843837B2 (ja) 2001-12-28 2006-11-08 Ｔｄｋ株式会社 スピンバルブ磁気抵抗効果センサの製造方法及び薄膜磁気ヘッドの製造方法
US6821907B2 (en) * 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6911346B2 (en) * 2002-04-03 2005-06-28 Applied Materials, Inc. Method of etching a magnetic material
US7009235B2 (en) * 2003-11-10 2006-03-07 Unity Semiconductor Corporation Conductive memory stack with non-uniform width
JP2004146552A (ja) 2002-10-24 2004-05-20 Fujitsu Ltd 微細レジストパターンの形成方法
US6872467B2 (en) * 2002-11-12 2005-03-29 Nve Corporation Magnetic field sensor with augmented magnetoresistive sensing layer
US7105361B2 (en) * 2003-01-06 2006-09-12 Applied Materials, Inc. Method of etching a magnetic material
JP3822569B2 (ja) * 2003-02-28 2006-09-20 株式会社東芝 半導体装置およびその製造方法
US6924519B2 (en) * 2003-05-02 2005-08-02 Kabushiki Kaisha Toshiba Semiconductor device with perovskite capacitor
US6812141B1 (en) * 2003-07-01 2004-11-02 Infineon Technologies Ag Recessed metal lines for protective enclosure in integrated circuits
US7041551B2 (en) * 2003-09-30 2006-05-09 Infineon Technologies Ag Device and a method for forming a capacitor device
US20050070043A1 (en) * 2003-09-30 2005-03-31 Koji Yamakawa Semiconductor device and method for manufacturing the same
US7446985B2 (en) * 2003-12-19 2008-11-04 Agency For Science Technology And Research Epitaxial oxide cap layers for enhancing GMR performance
US7190557B2 (en) * 2004-04-14 2007-03-13 Hitachi Global Storage Technologies Netherlands B.V. Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
US7186658B2 (en) * 2004-05-24 2007-03-06 Winbond Electronics Corporation Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma
JP2006060044A (ja) 2004-08-20 2006-03-02 Canon Anelva Corp 磁気抵抗効果素子の製造方法
JP2006093451A (ja) * 2004-09-24 2006-04-06 Toshiba Corp 半導体装置
US7381343B2 (en) * 2005-07-08 2008-06-03 International Business Machines Corporation Hard mask structure for patterning of materials

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8604569B2 (en) 2007-10-03 2013-12-10 Kabushiki Kaisha Toshiba Magnetoresistive element
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
WO2009084445A1 (ja) * 2007-12-27 2009-07-09 Canon Anelva Corporation ドライエッチング方法、磁気抵抗効果素子とその製造方法及び製造装置
JP2009295737A (ja) * 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
WO2010084909A1 (ja) * 2009-01-21 2010-07-29 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置
JP2010182824A (ja) * 2009-02-04 2010-08-19 Toshiba Corp 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法
JP2010182380A (ja) * 2009-02-06 2010-08-19 Fujitsu Ltd 成型加工品の製造方法、記憶媒体の製造方法、及び、情報記憶装置
JP2012146726A (ja) * 2011-01-07 2012-08-02 Sony Corp 記憶素子及び記憶装置
TWI487155B (zh) * 2011-01-07 2015-06-01 Sony Corp Memory elements and memory devices
JP2012244031A (ja) * 2011-05-23 2012-12-10 Sony Corp 記憶素子、記憶装置
US9356230B2 (en) 2011-05-23 2016-05-31 Sony Corporation Perpendicular magnetization storage element and storage device
JPWO2012176747A1 (ja) * 2011-06-24 2015-02-23 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP2014052190A (ja) * 2012-09-04 2014-03-20 Ulvac Japan Ltd 抵抗測定方法
JP2014039061A (ja) * 2013-10-24 2014-02-27 Renesas Electronics Corp 半導体装置の製造方法
JP2017212330A (ja) * 2016-05-25 2017-11-30 富士通株式会社 磁気記憶素子の製造方法および磁気記憶素子

Also Published As

Publication number Publication date
US7727409B2 (en) 2010-06-01
US20060038246A1 (en) 2006-02-23
US20080217289A1 (en) 2008-09-11
US7652852B2 (en) 2010-01-26

Similar Documents

Publication Publication Date Title
US7727409B2 (en) Magnetoresistance effect device and method of production thereof
KR102330561B1 (ko) 비에칭 자기 정렬 자석 터널 접합(mtj) 디바이스 구조물
US10847715B2 (en) Magnetoresistive device and method of manufacturing same
JP5069034B2 (ja) 磁気トンネル接合素子およびその形成方法
US7112454B2 (en) System and method for reducing shorting in memory cells
KR101870873B1 (ko) 반도체 소자의 제조방법
JP5153061B2 (ja) 磁気メモリ構造およびトンネル磁気抵抗効果型再生ヘッドならびにそれらの製造方法
JP2012038815A (ja) 磁気抵抗素子の製造方法
US20170125663A1 (en) Method of Manufacturing a Magnetoresistive Stack/ Structure using Plurality of Encapsulation Layers
JP2004128229A (ja) 磁性メモリ及びその製造方法
KR20060049223A (ko) ＭＴＪ 디바이스의 ｄＲ／Ｒ을 향상시키기 위한 새로운캡핑 구조체
CN110945672A (zh) 磁穿隧接面所用的保护钝化层
JP2008065944A (ja) 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
JP4448185B2 (ja) 磁気抵抗効果素子の製造方法
JP2009081451A (ja) 磁気抵抗効果素子
US8901687B2 (en) Magnetic device with a substrate, a sensing block and a repair layer
JP2010045398A (ja) 磁気抵抗効果素子の製造方法
JP2006173166A (ja) 磁気記憶装置の製造方法
JP2007158137A (ja) 薄膜の表面平坦化方法
JP2013179220A (ja) 記憶装置及びその製造方法
JP2006093223A (ja) トンネル磁気抵抗素子の形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060301

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070711

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20080226

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20080317

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080325

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080916

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090224