JP2009081451A - 磁気抵抗効果素子 - Google Patents
磁気抵抗効果素子 Download PDFInfo
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- JP2009081451A JP2009081451A JP2008290578A JP2008290578A JP2009081451A JP 2009081451 A JP2009081451 A JP 2009081451A JP 2008290578 A JP2008290578 A JP 2008290578A JP 2008290578 A JP2008290578 A JP 2008290578A JP 2009081451 A JP2009081451 A JP 2009081451A
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- layer
- effect element
- tmr element
- etching
- oxide
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- 230000000694 effects Effects 0.000 title claims abstract description 41
- 230000005291 magnetic effect Effects 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 9
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 8
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 8
- 239000010948 rhodium Substances 0.000 claims description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 12
- 239000010955 niobium Substances 0.000 claims description 12
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 6
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 6
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 148
- 239000000463 material Substances 0.000 abstract description 31
- 238000004519 manufacturing process Methods 0.000 abstract description 27
- 238000001312 dry etching Methods 0.000 abstract description 22
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000002344 surface layer Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 39
- 239000007789 gas Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 239000011241 protective layer Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 15
- 230000005415 magnetization Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910019041 PtMn Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 150000002830 nitrogen compounds Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 nitrogen-containing compound Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
Abstract
【解決手段】基板、少なくとも2層の磁性層を含む磁性多層膜、Ru、Rh、Os、Nb、Ir及びReのいずれか1つの金属からなる金属層、並びに該金属の酸化物からなる導電性酸化物層、を有する磁気抵抗効果素子とする。
【選択図】図1
Description
11 基板
12 下部電極
13 TMR素子部
15 保護層
20 本発明の実施形態に係る磁気抵抗効果素子
Claims (5)
- 基板、
少なくとも2層の磁性層を含む磁性多層膜、並びに、
Ru(ルテニウム)、Rh(ロジウム)、Os(オスミウム)、Nb(ニオブ)、Ir(イリジウム)及びRe(レニウム)のいずれか1つの金属の酸化物からなる導電性酸化物層、
を有することを特徴とする磁気抵抗効果素子。 - 前記導電性酸化物層が、Ru(ルテニウム)の酸化物からなることを特徴とする請求項1に記載の磁気抵抗効果素子。
- 基板、
少なくとも2層の磁性層を含む磁性多層膜、
Ru(ルテニウム)、Rh(ロジウム)、Os(オスミウム)、Nb(ニオブ)、Ir(イリジウム)及びRe(レニウム)のいずれか1つの金属からなる金属層、並びに該金属の酸化物からなる導電性酸化物層、
を有することを特徴とする請求項1に記載の磁気抵抗効果素子。 - 前記金属層がRu(ルテニウム)からなり、前記導電性酸化物層がRu(ルテニウム)の酸化物からなることを特徴とする請求項3に記載の磁気抵抗効果素子。
- 前記導電性酸化物層の抵抗率は、6.0×10-6Ωm以下であることを特徴とする請求項1に記載の磁気抵抗効果素子。
Priority Applications (1)
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JP2008290578A JP2009081451A (ja) | 2008-11-13 | 2008-11-13 | 磁気抵抗効果素子 |
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JP2008290578A JP2009081451A (ja) | 2008-11-13 | 2008-11-13 | 磁気抵抗効果素子 |
Related Parent Applications (1)
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JP2004240838A Division JP2006060044A (ja) | 2004-08-20 | 2004-08-20 | 磁気抵抗効果素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009081451A true JP2009081451A (ja) | 2009-04-16 |
JP2009081451A5 JP2009081451A5 (ja) | 2009-05-28 |
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JP2008290578A Pending JP2009081451A (ja) | 2008-11-13 | 2008-11-13 | 磁気抵抗効果素子 |
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JP (1) | JP2009081451A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011159963A (ja) * | 2010-01-29 | 2011-08-18 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001223412A (ja) * | 2000-02-09 | 2001-08-17 | Fujitsu Ltd | リードヘッド素子及びその製造方法 |
JP2002026281A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 固体磁気メモリ |
US20030030944A1 (en) * | 2001-07-31 | 2003-02-13 | Tsann Lin | In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
JP2003218431A (ja) * | 2002-01-21 | 2003-07-31 | Yamaha Corp | 磁気トンネル接合素子の製法 |
JP2004006589A (ja) * | 2002-03-28 | 2004-01-08 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP2004146552A (ja) * | 2002-10-24 | 2004-05-20 | Fujitsu Ltd | 微細レジストパターンの形成方法 |
JP2004172599A (ja) * | 2002-11-01 | 2004-06-17 | Nec Corp | 磁気抵抗デバイス及びその製造方法 |
-
2008
- 2008-11-13 JP JP2008290578A patent/JP2009081451A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001223412A (ja) * | 2000-02-09 | 2001-08-17 | Fujitsu Ltd | リードヘッド素子及びその製造方法 |
JP2002026281A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 固体磁気メモリ |
US20030030944A1 (en) * | 2001-07-31 | 2003-02-13 | Tsann Lin | In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture |
JP2003218431A (ja) * | 2002-01-21 | 2003-07-31 | Yamaha Corp | 磁気トンネル接合素子の製法 |
JP2004006589A (ja) * | 2002-03-28 | 2004-01-08 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP2004146552A (ja) * | 2002-10-24 | 2004-05-20 | Fujitsu Ltd | 微細レジストパターンの形成方法 |
JP2004172599A (ja) * | 2002-11-01 | 2004-06-17 | Nec Corp | 磁気抵抗デバイス及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011159963A (ja) * | 2010-01-29 | 2011-08-18 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
KR101566925B1 (ko) | 2010-01-29 | 2015-11-16 | 삼성전자주식회사 | 반도체소자의 제조방법 |
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