JP2006049628A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000002955 isolation Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 31
- 238000005468 ion implantation Methods 0.000 description 19
- 125000001475 halogen functional group Chemical group 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- -1 Halo ions Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 半導体装置10は、支持基板13と、前記支持基板上に設けられ、5−10nmの厚さを有する埋め込み絶縁膜14と、前記埋め込み絶縁膜上に設けられたシリコン層15と、前記シリコン層に設けられたMOSFET11と、前記MOSFET11の下部にあって前記支持基板13中に局所的に設けられたトリプルウエル領域17、18とからなる。
【選択図】 図1
Description
図1は第1の実施例によるSOIデバイス10を示し、前記デバイスは閾値制御可能なn−チャネルMOSFET11と、一定の閾値を有するn−チャネルMOSFET12とを含んでいる。
Claims (5)
- 支持基板と、
前記支持基板上に設けられ、5−10nmの厚さを有する埋め込み絶縁膜と、
前記埋め込み絶縁膜上に設けられたシリコン層と、
前記シリコン層に設けられたMOSFETと、
前記MOSFETの下部にあって前記支持基板中に局所的に設けられたトリプルウエル領域と
からなることを特徴とする半導体装置。 - 支持基板と、
前記支持基板上に設けられ、5−10nmの厚さを有する埋め込み絶縁膜と、
前記埋め込み絶縁膜上に設けられた第1のシリコン層と、
前記支持基板上に設けられたバルクの第2のシリコン層と、
前記第1のシリコン層に設けられた第1のMOSFETと、
前記第2のシリコン層に設けられた第2のMOSFETと、
少なくとも前記第1及び第2のMOSFETの下部にあって前記支持基板中に設けられたトリプルウエル領域と
からなることを特徴とする半導体装置。 - 支持基板と、
前記支持基板上に設けられ、5−10nmの厚さを有する埋め込み絶縁膜と、
前記埋め込み絶縁膜上に設けられた第1及び第2のシリコン層と、
前記支持基板中に設けられ、前記第1及び第2のシリコン層を絶縁分離する絶縁分離層と、
前記第1のシリコン層に設けられた完全空乏型の第1のMOSFETと、
前記第2のシリコン層に設けられた部分空乏型の第2のMOSFETと、
少なくとも前記第1及び第2のMOSFETの下部にあって前記支持基板中に設けられたトリプルウエル領域とからなることを特徴とする半導体装置。 - 前記トリプルウエル領域における1つのウエル領域は局所的に電位を印加するためのウエルコンタクト領域を有することを特徴とする請求項1乃至3のいずれか1記載の半導体装置。
- 前記トリプルウエル領域間にトレンチにより形成された素子分離領域を有することを特徴とする請求項3記載の半導体装置。
Priority Applications (2)
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JP2004229536A JP4664631B2 (ja) | 2004-08-05 | 2004-08-05 | 半導体装置及びその製造方法 |
US11/097,387 US7259428B2 (en) | 2004-08-05 | 2005-04-04 | Semiconductor device using SOI structure having a triple-well region |
Applications Claiming Priority (1)
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JP2004229536A JP4664631B2 (ja) | 2004-08-05 | 2004-08-05 | 半導体装置及びその製造方法 |
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Publication Number | Publication Date |
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JP2006049628A true JP2006049628A (ja) | 2006-02-16 |
JP4664631B2 JP4664631B2 (ja) | 2011-04-06 |
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JP (1) | JP4664631B2 (ja) |
Cited By (8)
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JP2009135140A (ja) * | 2007-11-28 | 2009-06-18 | Renesas Technology Corp | 半導体装置および半導体装置の制御方法 |
JP2011181896A (ja) * | 2010-03-03 | 2011-09-15 | Soitec Silicon On Insulator Technologies | 絶縁層の下の埋め込み裏面制御ゲートを有するSeOI基板上のデータパスセル |
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