JP2006024884A - 窒化物半導体素子及び製造方法 - Google Patents
窒化物半導体素子及び製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 183
- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000003746 surface roughness Effects 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 54
- 230000007480 spreading Effects 0.000 claims description 21
- 238000003892 spreading Methods 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- 239000002105 nanoparticle Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 31
- 239000007789 gas Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
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Abstract
【解決手段】窒化物結晶成長のための基板上に形成されたn型窒化物半導体層と、上記n型窒化物半導体層上に形成された活性層と、上記活性層上に形成されたp型第1窒化物半導体層と、上記p型第1窒化物半導体層上に形成され、絶縁性物質から成る微細構造の電流拡散パターンと、上記電流拡散パターンが形成された上記p型第1窒化物半導体層上に形成されたp型第2窒化物半導体層とを含む。
【選択図】 図2
Description
本発明による電流拡散パターンの効果を確認するために、同一条件で2個の窒化物半導体素子を製造した。
11、21、31 サファイア基板
12、22、32、42 バッファ層
13、23、33、43 n型窒化物半導体層
14、24、34、44 活性層
15、25、35 p型窒化物半導体層
25a、35a、45a p型第1窒化物半導体層
25b、35b、45b p型第2窒化物半導体層
26、36、46 電流拡散パターン
18、28、38、48 n側電極
19、29、39、49 p側電極
33a n型第1窒化物半導体層
33b n型第2窒化物半導体層
37 内部微細パターン
41 窒化物結晶成長用基板
47 マスクパターン
A 一部領域
S 上面
Claims (13)
- 窒化物結晶成長のための基板上に形成されたn型窒化物半導体層と、
上記n型窒化物半導体層上に形成された活性層と、
上記活性層上に形成されたp型第1窒化物半導体層と、
上記p型第1窒化物半導体層上に形成され、絶縁性物質から成る微細構造の電流拡散パターンと、
上記電流拡散パターンが形成された上記p型第1窒化物半導体層上に形成されたp型第2窒化物半導体層とを含むこと、
を特徴とする窒化物半導体素子。 - 上記電流拡散パターンは、ナノサイズのドット構造で分散されたシリコン窒化物(SiNx)であること、
を特徴とする請求項1に記載の窒化物半導体素子。 - 上記p型第2窒化物半導体層の上面は、上記電流拡散パターンと類似するパターンをマスクに用いてエッチングされ得られた表面粗さを有すること、
を特徴とする請求項1又は2に記載の窒化物半導体素子。 - 上記p型第1及び第2窒化物半導体層の各厚さは、約50〜約2000Åであること、
を特徴とする請求項1から3のいずれか一項に記載の窒化物半導体素子。 - 上記電流分散パターンは、約10Å以下であること、
を特徴とする請求項1から4のいずれか一項に記載の窒化物半導体素子。 - 上記n型窒化物半導体層は、上記基板上面に形成されたn型第1窒化物半導体層と、上記n型第1窒化物半導体層上にナノサイズのドット構造で分散されたシリコン窒化物パターンと、上記パターンが形成された上記n型第1窒化物半導体層上に形成されたn型第2窒化物半導体層とを含むこと、
を特徴とする請求項1から5のいずれか一項に記載の窒化物半導体素子。 - 気相蒸着法を利用した窒化物半導体素子の製造方法において、
窒化物結晶成長のための基板上にn型窒化物半導体層を形成する段階と、
上記n型窒化物半導体層上に活性層を形成する段階と、
上記活性層上にp型第1窒化物半導体層を形成する段階と、
上記p型第1窒化物半導体層上に絶縁性物質から成る微細構造の電流拡散パターンを形成する段階と、
上記電流拡散パターンが形成された上記p型第1窒化物半導体層上に、p型第2窒化物半導体層を形成する段階とを含むこと、
を特徴とする窒化物半導体素子の製造方法。 - 上記電流拡散パターンを形成する段階は、ナノサイズのドット構造で分散されたシリコン窒化物(SiNx)を形成する段階であること、
を特徴とする請求項7に記載の窒化物半導体素子の製造方法。 - 上記電流拡散パターンを形成する段階は、
シランまたはテトラエチルシランと、アンモニアガスを供給してナノサイズのドット構造のシリコン窒化物パターンを形成する段階であること、
を特徴とする請求項8に記載の窒化物半導体素子の製造方法。 - 上記p型第2窒化物半導体層の上面に、上記電流分散パターンと同一な方式によりマスクパターンを形成する段階と、上記マスクパターンを利用して、上記p型第2窒化物半導体層の上面をエッチングする段階とを含むこと、
を特徴とする請求項7から9のいずれか一項に記載の窒化物半導体素子の製造方法。 - 上記p型第1及び第2窒化物半導体層の各厚さは、約50〜約2000Åであること、
を特徴とする請求項7から10のいずれか一項に記載の窒化物半導体素子の製造方法。 - 上記電流分散パターンの厚さは、約10Å以下であること、
を特徴とする請求項7から11のいずれか一項に記載の窒化物半導体素子の製造方法。 - 上記n型窒化物半導体層を形成する段階は、
上記基板上にn型第1窒化物半導体層を形成する段階と、上記n型第1窒化物半導体層上にナノサイズのドット構造で分散されたシリコン窒化物パターンを形成する段階と、上記パターンが形成された上記n型第1窒化物半導体層上にn型第2窒化物半導体層を形成する段階とを含むこと、
を特徴とする請求項7から12のいずれか一項に記載の窒化物半導体素子の製造方法。
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Cited By (3)
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2004
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JP2007214576A (ja) * | 2006-02-10 | 2007-08-23 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子およびその製造方法 |
JP2017531327A (ja) * | 2014-10-06 | 2017-10-19 | ウィスコンシン アルムニ リサーチ ファンデイション | ハイブリッド型ヘテロ構造発光デバイス |
US10749062B2 (en) | 2015-09-14 | 2020-08-18 | Wisconsin Alumni Research Foundation | Hybrid tandem solar cells with improved tunnel junction structures |
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Publication number | Publication date |
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KR100616596B1 (ko) | 2006-08-28 |
KR20060004314A (ko) | 2006-01-12 |
US7187007B2 (en) | 2007-03-06 |
US20070148923A1 (en) | 2007-06-28 |
US20060006407A1 (en) | 2006-01-12 |
US7687294B2 (en) | 2010-03-30 |
JP4098307B2 (ja) | 2008-06-11 |
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