JP2006024653A - 貫通基板および貫通基板の製造方法 - Google Patents

貫通基板および貫通基板の製造方法 Download PDF

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Publication number
JP2006024653A
JP2006024653A JP2004199871A JP2004199871A JP2006024653A JP 2006024653 A JP2006024653 A JP 2006024653A JP 2004199871 A JP2004199871 A JP 2004199871A JP 2004199871 A JP2004199871 A JP 2004199871A JP 2006024653 A JP2006024653 A JP 2006024653A
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JP
Japan
Prior art keywords
substrate
hole
wall surface
conductive layer
along
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Pending
Application number
JP2004199871A
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English (en)
Japanese (ja)
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JP2006024653A5 (enrdf_load_stackoverflow
Inventor
Masami Yakabe
正巳 八壁
Kenichi Kagawa
健一 加川
Tomohisa Hoshino
智久 星野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004199871A priority Critical patent/JP2006024653A/ja
Priority to EP05765497A priority patent/EP1775761A4/en
Priority to KR1020087003018A priority patent/KR100858075B1/ko
Priority to PCT/JP2005/012425 priority patent/WO2006004128A1/ja
Priority to CNB2005800221520A priority patent/CN100505178C/zh
Priority to US11/631,638 priority patent/US7866038B2/en
Priority to TW094122866A priority patent/TW200616503A/zh
Publication of JP2006024653A publication Critical patent/JP2006024653A/ja
Publication of JP2006024653A5 publication Critical patent/JP2006024653A5/ja
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
JP2004199871A 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法 Pending JP2006024653A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004199871A JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法
EP05765497A EP1775761A4 (en) 2004-07-06 2005-07-05 SUBSTRATE AND INTERMEDIATE AND METHOD FOR PRODUCING A SUBSTRATE
KR1020087003018A KR100858075B1 (ko) 2004-07-06 2005-07-05 인터포저
PCT/JP2005/012425 WO2006004128A1 (ja) 2004-07-06 2005-07-05 貫通基板およびインターポーザ、ならびに貫通基板の製造方法
CNB2005800221520A CN100505178C (zh) 2004-07-06 2005-07-05 贯通基板、内插器以及贯通基板的制造方法
US11/631,638 US7866038B2 (en) 2004-07-06 2005-07-05 Through substrate, interposer and manufacturing method of through substrate
TW094122866A TW200616503A (en) 2004-07-06 2005-07-06 Through substrate and interposer, and method for manufacturing through substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004199871A JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法

Publications (2)

Publication Number Publication Date
JP2006024653A true JP2006024653A (ja) 2006-01-26
JP2006024653A5 JP2006024653A5 (enrdf_load_stackoverflow) 2007-04-05

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JP2004199871A Pending JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法

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JP (1) JP2006024653A (enrdf_load_stackoverflow)
CN (1) CN100505178C (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173856A (ja) * 2007-02-05 2007-07-05 Matsushita Electric Works Ltd 半導体ウェハへの貫通孔配線の形成方法
KR100916771B1 (ko) * 2007-10-08 2009-09-14 성균관대학교산학협력단 관통형전극의 형성방법
KR101031134B1 (ko) 2008-09-11 2011-04-27 주식회사 동부하이텍 반도체 소자의 컨택 및 그 제조 방법
EP2388814A2 (en) 2010-05-21 2011-11-23 Napra co.,Ltd Electronic device and manufacturing method therefor
US8288772B2 (en) 2008-10-16 2012-10-16 Dai Nippon Printing Co., Ltd. Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate
JP2013161910A (ja) * 2012-02-03 2013-08-19 Osaka Prefecture Univ 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ
JP2014093406A (ja) * 2012-11-02 2014-05-19 Toppan Printing Co Ltd 貫通電極付き配線基板及びその製造方法
JP2017509154A (ja) * 2014-03-04 2017-03-30 クアルコム，インコーポレイテッド 導電性ビアを備える基板
US9930779B2 (en) 2016-04-28 2018-03-27 Tdk Corporation Through wiring substrate
JP2019507960A (ja) * 2016-03-07 2019-03-22 マイクロン テクノロジー，インク． 低静電容量の基板貫通ビア構造体
CN113079620A (zh) * 2020-01-06 2021-07-06 三星电机株式会社 印刷电路板

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101052870B1 (ko) * 2008-04-21 2011-07-29 주식회사 하이닉스반도체 관통 전극, 이를 갖는 회로 기판, 이를 갖는 반도체 패키지및 반도체 패키지를 갖는 적층 반도체 패키지
US8455356B2 (en) * 2010-01-21 2013-06-04 International Business Machines Corporation Integrated void fill for through silicon via
TWI449138B (zh) * 2011-01-19 2014-08-11 Subtron Technology Co Ltd 封裝載板
CN105390475A (zh) * 2015-10-20 2016-03-09 北京大学 一种衬底内部的电容集成结构及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001352017A (ja) * 2000-06-06 2001-12-21 Fujitsu Ltd 電子装置実装基板及びその製造方法
JP2002009193A (ja) * 2000-04-18 2002-01-11 Matsushita Electric Ind Co Ltd 半導体装置
WO2002078087A2 (en) * 2001-02-22 2002-10-03 Tru-Si Technologies, Inc. Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same
JP2004119606A (ja) * 2002-09-25 2004-04-15 Canon Inc 半導体基板の貫通孔埋め込み方法および半導体基板
EP1415950A2 (en) * 2002-10-17 2004-05-06 Institute of Microelectronics Wafer-level package for micro-electro-mechanical systems
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009193A (ja) * 2000-04-18 2002-01-11 Matsushita Electric Ind Co Ltd 半導体装置
JP2001352017A (ja) * 2000-06-06 2001-12-21 Fujitsu Ltd 電子装置実装基板及びその製造方法
WO2002078087A2 (en) * 2001-02-22 2002-10-03 Tru-Si Technologies, Inc. Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same
JP2004526321A (ja) * 2001-02-22 2004-08-26 トル−シ・テクノロジーズ・インコーポレイテッド 開口に複数の導電層が形成された半導体構造体、及びその製造方法
JP2004119606A (ja) * 2002-09-25 2004-04-15 Canon Inc 半導体基板の貫通孔埋め込み方法および半導体基板
EP1415950A2 (en) * 2002-10-17 2004-05-06 Institute of Microelectronics Wafer-level package for micro-electro-mechanical systems
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173856A (ja) * 2007-02-05 2007-07-05 Matsushita Electric Works Ltd 半導体ウェハへの貫通孔配線の形成方法
KR100916771B1 (ko) * 2007-10-08 2009-09-14 성균관대학교산학협력단 관통형전극의 형성방법
KR101031134B1 (ko) 2008-09-11 2011-04-27 주식회사 동부하이텍 반도체 소자의 컨택 및 그 제조 방법
US8637397B2 (en) 2008-10-16 2014-01-28 Dai Nippon Printing Co., Ltd Method for manufacturing a through hole electrode substrate
US8288772B2 (en) 2008-10-16 2012-10-16 Dai Nippon Printing Co., Ltd. Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrate
EP2388814A2 (en) 2010-05-21 2011-11-23 Napra co.,Ltd Electronic device and manufacturing method therefor
US9685394B2 (en) 2010-05-21 2017-06-20 Napra Co., Ltd. Electronic device and manufacturing method therefor
JP2013161910A (ja) * 2012-02-03 2013-08-19 Osaka Prefecture Univ 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ
JP2014093406A (ja) * 2012-11-02 2014-05-19 Toppan Printing Co Ltd 貫通電極付き配線基板及びその製造方法
JP2017509154A (ja) * 2014-03-04 2017-03-30 クアルコム，インコーポレイテッド 導電性ビアを備える基板
JP2019507960A (ja) * 2016-03-07 2019-03-22 マイクロン テクノロジー，インク． 低静電容量の基板貫通ビア構造体
US9930779B2 (en) 2016-04-28 2018-03-27 Tdk Corporation Through wiring substrate
CN113079620A (zh) * 2020-01-06 2021-07-06 三星电机株式会社 印刷电路板

Also Published As

Publication number Publication date
CN100505178C (zh) 2009-06-24
CN1977365A (zh) 2007-06-06

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