JP2006024653A5 - - Google Patents

Download PDF

Info

Publication number
JP2006024653A5
JP2006024653A5 JP2004199871A JP2004199871A JP2006024653A5 JP 2006024653 A5 JP2006024653 A5 JP 2006024653A5 JP 2004199871 A JP2004199871 A JP 2004199871A JP 2004199871 A JP2004199871 A JP 2004199871A JP 2006024653 A5 JP2006024653 A5 JP 2006024653A5
Authority
JP
Japan
Prior art keywords
conductive layer
hole
substrate
wall surface
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004199871A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006024653A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004199871A priority Critical patent/JP2006024653A/ja
Priority claimed from JP2004199871A external-priority patent/JP2006024653A/ja
Priority to EP05765497A priority patent/EP1775761A4/en
Priority to KR1020087003018A priority patent/KR100858075B1/ko
Priority to PCT/JP2005/012425 priority patent/WO2006004128A1/ja
Priority to CNB2005800221520A priority patent/CN100505178C/zh
Priority to US11/631,638 priority patent/US7866038B2/en
Priority to TW094122866A priority patent/TW200616503A/zh
Publication of JP2006024653A publication Critical patent/JP2006024653A/ja
Publication of JP2006024653A5 publication Critical patent/JP2006024653A5/ja
Pending legal-status Critical Current

Links

JP2004199871A 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法 Pending JP2006024653A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004199871A JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法
EP05765497A EP1775761A4 (en) 2004-07-06 2005-07-05 SUBSTRATE AND INTERMEDIATE AND METHOD FOR PRODUCING A SUBSTRATE
KR1020087003018A KR100858075B1 (ko) 2004-07-06 2005-07-05 인터포저
PCT/JP2005/012425 WO2006004128A1 (ja) 2004-07-06 2005-07-05 貫通基板およびインターポーザ、ならびに貫通基板の製造方法
CNB2005800221520A CN100505178C (zh) 2004-07-06 2005-07-05 贯通基板、内插器以及贯通基板的制造方法
US11/631,638 US7866038B2 (en) 2004-07-06 2005-07-05 Through substrate, interposer and manufacturing method of through substrate
TW094122866A TW200616503A (en) 2004-07-06 2005-07-06 Through substrate and interposer, and method for manufacturing through substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004199871A JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法

Publications (2)

Publication Number Publication Date
JP2006024653A JP2006024653A (ja) 2006-01-26
JP2006024653A5 true JP2006024653A5 (enrdf_load_stackoverflow) 2007-04-05

Family

ID=35797731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004199871A Pending JP2006024653A (ja) 2004-07-06 2004-07-06 貫通基板および貫通基板の製造方法

Country Status (2)

Country Link
JP (1) JP2006024653A (enrdf_load_stackoverflow)
CN (1) CN100505178C (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4807272B2 (ja) * 2007-02-05 2011-11-02 パナソニック電工株式会社 半導体ウェハへの貫通孔配線の形成方法
KR100916771B1 (ko) * 2007-10-08 2009-09-14 성균관대학교산학협력단 관통형전극의 형성방법
KR101052870B1 (ko) * 2008-04-21 2011-07-29 주식회사 하이닉스반도체 관통 전극, 이를 갖는 회로 기판, 이를 갖는 반도체 패키지및 반도체 패키지를 갖는 적층 반도체 패키지
KR101031134B1 (ko) 2008-09-11 2011-04-27 주식회사 동부하이텍 반도체 소자의 컨택 및 그 제조 방법
JP5246103B2 (ja) 2008-10-16 2013-07-24 大日本印刷株式会社 貫通電極基板の製造方法
US8455356B2 (en) * 2010-01-21 2013-06-04 International Business Machines Corporation Integrated void fill for through silicon via
JP5209075B2 (ja) 2010-05-21 2013-06-12 有限会社 ナプラ 電子デバイス及びその製造方法
TWI449138B (zh) * 2011-01-19 2014-08-11 Subtron Technology Co Ltd 封裝載板
JP2013161910A (ja) * 2012-02-03 2013-08-19 Osaka Prefecture Univ 半導体装置の製造方法、半導体装置、赤外線センサの製造方法および赤外線センサ
JP6056386B2 (ja) * 2012-11-02 2017-01-11 凸版印刷株式会社 貫通電極付き配線基板及びその製造方法
US9596768B2 (en) * 2014-03-04 2017-03-14 Qualcomm Incorporated Substrate with conductive vias
CN105390475A (zh) * 2015-10-20 2016-03-09 北京大学 一种衬底内部的电容集成结构及其制造方法
US10490483B2 (en) * 2016-03-07 2019-11-26 Micron Technology, Inc. Low capacitance through substrate via structures
JP2017199854A (ja) 2016-04-28 2017-11-02 Tdk株式会社 貫通配線基板
KR102803444B1 (ko) * 2020-01-06 2025-05-07 삼성전기주식회사 인쇄회로기판

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009193A (ja) * 2000-04-18 2002-01-11 Matsushita Electric Ind Co Ltd 半導体装置
JP4628520B2 (ja) * 2000-06-06 2011-02-09 富士通株式会社 電子装置実装基板の製造方法
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
JP2004119606A (ja) * 2002-09-25 2004-04-15 Canon Inc 半導体基板の貫通孔埋め込み方法および半導体基板
SG111972A1 (en) * 2002-10-17 2005-06-29 Agency Science Tech & Res Wafer-level package for micro-electro-mechanical systems
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2006024653A5 (enrdf_load_stackoverflow)
JP2009194322A5 (enrdf_load_stackoverflow)
TW200746199A (en) Laminated electronic component and method for manufacturing the same
JP2015070007A5 (enrdf_load_stackoverflow)
JP2014239186A5 (enrdf_load_stackoverflow)
JP2010171377A5 (enrdf_load_stackoverflow)
TW200618706A (en) Method of manufacturing a substrate with through electrodes
TW200741916A (en) Low resistance and inductance backside through vias and methods of fabricating same
JP2010519780A5 (enrdf_load_stackoverflow)
TW200507233A (en) Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
JP2009164481A5 (enrdf_load_stackoverflow)
WO2006047349A3 (en) Electroform spring built on mandrel transferable to other surface
EP2053651A3 (en) Method for producing substrate
JP2009105311A5 (enrdf_load_stackoverflow)
MY140407A (en) Leadframe comprising tin plating or an intermetallic layer formed therefrom
JP2012114400A5 (enrdf_load_stackoverflow)
US20130089982A1 (en) Method of Fabricating a Substrate Having Conductive Through Holes
TW200701428A (en) Semiconductor device manufacturing method and semiconductor device
TW200512871A (en) Method of selectively making copper using plating technology
JP2014067941A5 (enrdf_load_stackoverflow)
TW200707666A (en) Semiconductor device and semiconductor device production method
TW200624816A (en) Probe needle, method of manufacturing probe needle, and method of manufacturing three dimensional solid structure
JP2013084852A5 (enrdf_load_stackoverflow)
TW200616503A (en) Through substrate and interposer, and method for manufacturing through substrate