TW200701428A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Semiconductor device manufacturing method and semiconductor device

Info

Publication number
TW200701428A
TW200701428A TW095105417A TW95105417A TW200701428A TW 200701428 A TW200701428 A TW 200701428A TW 095105417 A TW095105417 A TW 095105417A TW 95105417 A TW95105417 A TW 95105417A TW 200701428 A TW200701428 A TW 200701428A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
substrate
supporting body
device manufacturing
penetrating hole
Prior art date
Application number
TW095105417A
Other languages
Chinese (zh)
Other versions
TWI325627B (en
Inventor
Hiroaki Nakashima
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200701428A publication Critical patent/TW200701428A/en
Application granted granted Critical
Publication of TWI325627B publication Critical patent/TWI325627B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13009—Bump connector integrally formed with a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

A semiconductor device manufacturing method by which a penetrating electrode is formed by surely applying a conductor by a simple method. The semiconductor device manufacturing method is characterized in that the method is provided with a step wherein a substrate is thinned from its rear plane in a status where a first supporting body is attached on a substrate front plane, the first supporting body is removed from the substrate, a second supporting body having an opening section is mounted on the substrate rear plane, a penetrating hole connected to the opening section of the second supporting body is formed on the substrate prior to or after mounting of the second supporting body, an insulating film is formed in the penetrating hole section, and the penetrating hole of the substrate is filled with the conductor.
TW095105417A 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device TW200701428A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005040556A JP3880602B2 (en) 2005-02-17 2005-02-17 Semiconductor device manufacturing method, semiconductor device

Publications (2)

Publication Number Publication Date
TW200701428A true TW200701428A (en) 2007-01-01
TWI325627B TWI325627B (en) 2010-06-01

Family

ID=36916365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105417A TW200701428A (en) 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device

Country Status (4)

Country Link
JP (1) JP3880602B2 (en)
CN (1) CN101120438B (en)
TW (1) TW200701428A (en)
WO (1) WO2006087957A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423313B (en) * 2009-08-14 2014-01-11 Taiwan Semiconductor Mfg Method of forming semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478009B2 (en) 2007-11-09 2014-04-23 株式会社フジクラ Manufacturing method of semiconductor package
JP5138395B2 (en) 2008-01-22 2013-02-06 新光電気工業株式会社 Wiring board and manufacturing method thereof
JP5142862B2 (en) * 2008-07-10 2013-02-13 新光電気工業株式会社 Wiring board manufacturing method
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
KR101604607B1 (en) * 2009-10-26 2016-03-18 삼성전자주식회사 Semiconductor device and method of manufacturing the semiconductor device
CN102120561B (en) * 2010-01-08 2012-07-11 中芯国际集成电路制造(上海)有限公司 Method for forming wafer through hole
KR101185690B1 (en) 2011-08-02 2012-09-24 성균관대학교산학협력단 Method of processing a substrate
CN103258790A (en) * 2013-04-27 2013-08-21 江阴长电先进封装有限公司 Method for revealing inner metal of silicon through holes
JP5827277B2 (en) * 2013-08-02 2015-12-02 株式会社岡本工作機械製作所 Manufacturing method of semiconductor device
CN103441150B (en) * 2013-08-09 2016-03-02 如皋市晟太电子有限公司 A kind of applicable constant current tube simplifying encapsulation
JP6458429B2 (en) * 2014-09-30 2019-01-30 大日本印刷株式会社 Conductive material filled through electrode substrate and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319821A (en) * 2003-04-17 2004-11-11 Sharp Corp Method for manufacturing semiconductor device
JP2004327910A (en) * 2003-04-28 2004-11-18 Sharp Corp Semiconductor device and its manufacturing method
JP2005026405A (en) * 2003-07-01 2005-01-27 Sharp Corp Through electrode structure and its manufacturing method, semiconductor chip, and multichip semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423313B (en) * 2009-08-14 2014-01-11 Taiwan Semiconductor Mfg Method of forming semiconductor device
US8859424B2 (en) 2009-08-14 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer carrier and method of manufacturing
US9786540B2 (en) 2009-08-14 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US10522382B2 (en) 2009-08-14 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
CN101120438A (en) 2008-02-06
TWI325627B (en) 2010-06-01
JP2006228947A (en) 2006-08-31
JP3880602B2 (en) 2007-02-14
CN101120438B (en) 2010-05-26
WO2006087957A1 (en) 2006-08-24

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