JP2005527931A - ２ｔメモリセルを有するメモリアレイ - Google Patents

２ｔメモリセルを有するメモリアレイ Download PDF

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Publication number
JP2005527931A
JP2005527931A JP2004508351A JP2004508351A JP2005527931A JP 2005527931 A JP2005527931 A JP 2005527931A JP 2004508351 A JP2004508351 A JP 2004508351A JP 2004508351 A JP2004508351 A JP 2004508351A JP 2005527931 A JP2005527931 A JP 2005527931A
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JP
Japan
Prior art keywords
voltage
word line
storage
memory
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004508351A
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English (en)
Japanese (ja)
Inventor
ビクトール、カール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2005527931A publication Critical patent/JP2005527931A/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
JP2004508351A 2002-05-28 2003-05-09 ２ｔメモリセルを有するメモリアレイ Pending JP2005527931A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02077100 2002-05-28
PCT/IB2003/001931 WO2003100788A2 (en) 2002-05-28 2003-05-09 Memory array having 2t memory cells

Publications (1)

Publication Number Publication Date
JP2005527931A true JP2005527931A (ja) 2005-09-15

Family

ID=29558383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004508351A Pending JP2005527931A (ja) 2002-05-28 2003-05-09 ２ｔメモリセルを有するメモリアレイ

Country Status (9)

Country Link
US (1) US7038943B2 (enExample)
EP (1) EP1512150B1 (enExample)
JP (1) JP2005527931A (enExample)
CN (1) CN100541659C (enExample)
AT (1) ATE479990T1 (enExample)
AU (1) AU2003230096A1 (enExample)
DE (1) DE60333998D1 (enExample)
TW (1) TWI289305B (enExample)
WO (1) WO2003100788A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169609A (ja) * 2011-01-28 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
KR20130109821A (ko) * 2012-03-28 2013-10-08 삼성전자주식회사 반도체 기억 소자

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880238B2 (en) * 2008-04-10 2011-02-01 International Business Machines Corporation 2-T SRAM cell structure and method
US8164964B2 (en) * 2009-09-16 2012-04-24 Arm Limited Boosting voltage levels applied to an access control line when accessing storage cells in a memory
US8355276B2 (en) * 2009-11-20 2013-01-15 Arm Limited Controlling voltage levels applied to access devices when accessing storage cells in a memory
KR20140092537A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
US9659944B2 (en) * 2015-06-30 2017-05-23 Avago Technologies General Ip (Singapore) Pte. Ltd. One time programmable memory with a twin gate structure
KR102223551B1 (ko) * 2016-08-31 2021-03-08 마이크론 테크놀로지, 인크 메모리 셀 및 메모리 어레이
WO2018132250A1 (en) 2017-01-12 2018-07-19 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
CN107678920B (zh) * 2017-09-27 2021-11-23 惠州Tcl移动通信有限公司 防止动态存储烧坏存储器的方法、存储介质及智能终端
US10395752B2 (en) * 2017-10-11 2019-08-27 Globalfoundries Inc. Margin test for multiple-time programmable memory (MTPM) with split wordlines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066607A (en) * 1987-11-30 1991-11-19 Texas Instruments Incorporated Method of making a trench DRAM cell with dynamic gain
US5995410A (en) * 1997-06-20 1999-11-30 Micron Technology, Inc. Multiplication of storage capacitance in memory cells by using the Miller effect
US5943270A (en) * 1997-11-26 1999-08-24 Intel Corporation Two-transistor DRAM cell for logic process technology
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
JP2001290124A (ja) * 2000-04-07 2001-10-19 Canon Inc 液晶表示装置
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169609A (ja) * 2011-01-28 2012-09-06 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
KR20130109821A (ko) * 2012-03-28 2013-10-08 삼성전자주식회사 반도체 기억 소자
US8809930B2 (en) 2012-03-28 2014-08-19 Samsung Electronics Co., Ltd. Semiconductor memory devices
KR101944535B1 (ko) 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자

Also Published As

Publication number Publication date
CN1656565A (zh) 2005-08-17
US20050157533A1 (en) 2005-07-21
TWI289305B (en) 2007-11-01
AU2003230096A1 (en) 2003-12-12
WO2003100788A2 (en) 2003-12-04
US7038943B2 (en) 2006-05-02
ATE479990T1 (de) 2010-09-15
CN100541659C (zh) 2009-09-16
AU2003230096A8 (en) 2003-12-12
WO2003100788A3 (en) 2004-02-26
TW200403674A (en) 2004-03-01
EP1512150B1 (en) 2010-09-01
EP1512150A2 (en) 2005-03-09
DE60333998D1 (enExample) 2010-10-14

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