DE60333998D1 - - Google Patents

Info

Publication number
DE60333998D1
DE60333998D1 DE60333998T DE60333998T DE60333998D1 DE 60333998 D1 DE60333998 D1 DE 60333998D1 DE 60333998 T DE60333998 T DE 60333998T DE 60333998 T DE60333998 T DE 60333998T DE 60333998 D1 DE60333998 D1 DE 60333998D1
Authority
DE
Germany
Prior art keywords
line
array
coupled
gate
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60333998T
Other languages
German (de)
English (en)
Inventor
Victor Kaal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60333998D1 publication Critical patent/DE60333998D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
DE60333998T 2002-05-28 2003-05-09 Expired - Lifetime DE60333998D1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02077100 2002-05-28
PCT/IB2003/001931 WO2003100788A2 (en) 2002-05-28 2003-05-09 Memory array having 2t memory cells

Publications (1)

Publication Number Publication Date
DE60333998D1 true DE60333998D1 (enExample) 2010-10-14

Family

ID=29558383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60333998T Expired - Lifetime DE60333998D1 (enExample) 2002-05-28 2003-05-09

Country Status (9)

Country Link
US (1) US7038943B2 (enExample)
EP (1) EP1512150B1 (enExample)
JP (1) JP2005527931A (enExample)
CN (1) CN100541659C (enExample)
AT (1) ATE479990T1 (enExample)
AU (1) AU2003230096A1 (enExample)
DE (1) DE60333998D1 (enExample)
TW (1) TWI289305B (enExample)
WO (1) WO2003100788A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880238B2 (en) * 2008-04-10 2011-02-01 International Business Machines Corporation 2-T SRAM cell structure and method
US8164964B2 (en) * 2009-09-16 2012-04-24 Arm Limited Boosting voltage levels applied to an access control line when accessing storage cells in a memory
US8355276B2 (en) * 2009-11-20 2013-01-15 Arm Limited Controlling voltage levels applied to access devices when accessing storage cells in a memory
US8634230B2 (en) * 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101944535B1 (ko) 2012-03-28 2019-01-31 삼성전자주식회사 반도체 기억 소자
KR20140092537A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
US9659944B2 (en) * 2015-06-30 2017-05-23 Avago Technologies General Ip (Singapore) Pte. Ltd. One time programmable memory with a twin gate structure
EP3507831B1 (en) * 2016-08-31 2021-03-03 Micron Technology, Inc. Memory arrays
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
CN107678920B (zh) * 2017-09-27 2021-11-23 惠州Tcl移动通信有限公司 防止动态存储烧坏存储器的方法、存储介质及智能终端
US10395752B2 (en) * 2017-10-11 2019-08-27 Globalfoundries Inc. Margin test for multiple-time programmable memory (MTPM) with split wordlines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066607A (en) * 1987-11-30 1991-11-19 Texas Instruments Incorporated Method of making a trench DRAM cell with dynamic gain
US5995410A (en) * 1997-06-20 1999-11-30 Micron Technology, Inc. Multiplication of storage capacitance in memory cells by using the Miller effect
US5943270A (en) * 1997-11-26 1999-08-24 Intel Corporation Two-transistor DRAM cell for logic process technology
US6246083B1 (en) * 1998-02-24 2001-06-12 Micron Technology, Inc. Vertical gain cell and array for a dynamic random access memory
JP2001290124A (ja) * 2000-04-07 2001-10-19 Canon Inc 液晶表示装置
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell

Also Published As

Publication number Publication date
ATE479990T1 (de) 2010-09-15
WO2003100788A2 (en) 2003-12-04
TWI289305B (en) 2007-11-01
AU2003230096A8 (en) 2003-12-12
TW200403674A (en) 2004-03-01
US7038943B2 (en) 2006-05-02
CN1656565A (zh) 2005-08-17
EP1512150A2 (en) 2005-03-09
AU2003230096A1 (en) 2003-12-12
JP2005527931A (ja) 2005-09-15
EP1512150B1 (en) 2010-09-01
CN100541659C (zh) 2009-09-16
US20050157533A1 (en) 2005-07-21
WO2003100788A3 (en) 2004-02-26

Similar Documents

Publication Publication Date Title
TW200605364A (en) An isolation-less, contact-less array of nonvolatile memory cells each having a floating gate for storage of charges, and methods of manufacturing, and operating therefor
TWI320571B (en) Dynamic nonvolatile random access memory ne transistor cell and random access memory array
ATE397274T1 (de) Nicht flüchtige 3,5 transistor speicherzelle mit gateoxid-durchbruch
WO2001088987A3 (en) Staggered bitline strapping of a non-volatile memory cell
WO2004044917A3 (en) A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
WO2002015190A3 (en) Non-volatile memory, method of manufacture and programming
EP1583239A3 (en) Combination field programmable gate array allowing dynamic reprogrammability
DE60333998D1 (enExample)
WO2005106886A3 (en) Refreshing data stored in a flash memory
TW200605080A (en) Method of reading NAND memory to compensate for coupling between storage elements
MY126393A (en) 4f- square memory cell having vertical floating- gate transistors with self- aligned shallow trench isolation
AU2003262675A1 (en) Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
TW200507245A (en) Memory with charge storage locations
ATE441211T1 (de) Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden
WO2002037502A3 (en) Common source eeprom and flash memory
DE602004015457D1 (de) Nichtflüchtige, statische speicherzelle
TW200636730A (en) Flash memory device
WO2007002117A3 (en) Trench isolation transistor with grounded gate for a 4.5f2 dram cell and manufacturing method thereof
TW200715537A (en) Non-volatile memory cell and integrated circuit
TW200511313A (en) Non-refresh four-transistor memory cell
WO2005081798A3 (en) Twin eeprom memory transistors with subsurface stepped floating gates
WO2005089086A3 (en) Method and apparatus for read bitline clamping for gain cell dram devices
TW200509129A (en) Non-volatile dynamic random access memory
TW200746146A (en) NAND type multi-bit charge storage memory array and methods for operating and fabricating the same
TW200617982A (en) Sram array with improved cell stability