JP2005517285A5 - - Google Patents

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Publication number
JP2005517285A5
JP2005517285A5 JP2003555574A JP2003555574A JP2005517285A5 JP 2005517285 A5 JP2005517285 A5 JP 2005517285A5 JP 2003555574 A JP2003555574 A JP 2003555574A JP 2003555574 A JP2003555574 A JP 2003555574A JP 2005517285 A5 JP2005517285 A5 JP 2005517285A5
Authority
JP
Japan
Prior art keywords
source
substrate
forming
oxide liner
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003555574A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005517285A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/041103 external-priority patent/WO2003054951A1/en
Publication of JP2005517285A publication Critical patent/JP2005517285A/ja
Publication of JP2005517285A5 publication Critical patent/JP2005517285A5/ja
Pending legal-status Critical Current

Links

JP2003555574A 2001-12-19 2002-12-19 薄い酸化物ライナーを含む半導体デバイスおよびその製造方法 Pending JP2005517285A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2103701A 2001-12-19 2001-12-19
PCT/US2002/041103 WO2003054951A1 (en) 2001-12-19 2002-12-19 Semiconductor device comprising a thin oxide liner and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JP2005517285A JP2005517285A (ja) 2005-06-09
JP2005517285A5 true JP2005517285A5 (enExample) 2006-02-02

Family

ID=21801954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003555574A Pending JP2005517285A (ja) 2001-12-19 2002-12-19 薄い酸化物ライナーを含む半導体デバイスおよびその製造方法

Country Status (7)

Country Link
JP (1) JP2005517285A (enExample)
KR (1) KR20040068269A (enExample)
CN (1) CN1322565C (enExample)
AU (1) AU2002358269A1 (enExample)
DE (1) DE10297582T5 (enExample)
GB (1) GB2399222B (enExample)
WO (1) WO2003054951A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583016B1 (en) * 2002-03-26 2003-06-24 Advanced Micro Devices, Inc. Doped spacer liner for improved transistor performance
JP2008124441A (ja) * 2006-10-19 2008-05-29 Tokyo Electron Ltd 半導体装置の製造方法
DE102011005641B4 (de) * 2011-03-16 2018-01-04 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Verfahren zur Leistungssteigerung in Transistoren durch Reduzierung der Absenkung aktiver Gebiete und durch Entfernen von Abstandshaltern

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868617A (en) * 1988-04-25 1989-09-19 Elite Semiconductor & Sytems International, Inc. Gate controllable lightly doped drain mosfet devices
US5714413A (en) * 1995-12-11 1998-02-03 Intel Corporation Method of making a transistor having a deposited dual-layer spacer structure
US6472281B2 (en) * 1998-02-03 2002-10-29 Matsushita Electronics Corporation Method for fabricating semiconductor device using a CVD insulator film
US6162692A (en) * 1998-06-26 2000-12-19 Advanced Micro Devices, Inc. Integration of a diffusion barrier layer and a counter dopant region to maintain the dopant level within the junctions of a transistor
US6251764B1 (en) * 1999-11-15 2001-06-26 Chartered Semiconductor Manufacturing Ltd. Method to form an L-shaped silicon nitride sidewall spacer
US6294480B1 (en) * 1999-11-19 2001-09-25 Chartered Semiconductor Manufacturing Ltd. Method for forming an L-shaped spacer with a disposable organic top coating
US6156598A (en) * 1999-12-13 2000-12-05 Chartered Semiconductor Manufacturing Ltd. Method for forming a lightly doped source and drain structure using an L-shaped spacer
US6277700B1 (en) * 2000-01-11 2001-08-21 Chartered Semiconductor Manufacturing Ltd. High selective nitride spacer etch with high ratio of spacer width to deposited nitride thickness

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