Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
  • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
  • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
  • H01L21/2652—Through-implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
  • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
  • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Toxicology (AREA)
• Health & Medical Sciences (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)
• Formation Of Insulating Films (AREA)
• Electrodes Of Semiconductors (AREA)

Applications Claiming Priority (2)

Publications (3)

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ID=21801954

Family Applications (1)

Country Status (7)

Families Citing this family (3)

Citations (8)

• 2002
  • 2002-12-19 WO PCT/US2002/041103 patent/WO2003054951A1/en not_active Ceased
  • 2002-12-19 KR KR10-2004-7009490A patent/KR20040068269A/ko not_active Ceased
  • 2002-12-19 CN CNB028257502A patent/CN1322565C/zh not_active Expired - Fee Related
  • 2002-12-19 JP JP2003555574A patent/JP2005517285A/ja active Pending
  • 2002-12-19 DE DE10297582T patent/DE10297582T5/de not_active Ceased
  • 2002-12-19 AU AU2002358269A patent/AU2002358269A1/en not_active Abandoned
  • 2002-12-19 GB GB0412884A patent/GB2399222B/en not_active Expired - Lifetime

Patent Citations (8)

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