GB0412884D0 - Semiconductor device comprising a thin oxide liner and method of manufacturing the same - Google Patents
Semiconductor device comprising a thin oxide liner and method of manufacturing the sameInfo
- Publication number
- GB0412884D0 GB0412884D0 GBGB0412884.9A GB0412884A GB0412884D0 GB 0412884 D0 GB0412884 D0 GB 0412884D0 GB 0412884 A GB0412884 A GB 0412884A GB 0412884 D0 GB0412884 D0 GB 0412884D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- same
- thin oxide
- oxide liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2103701A | 2001-12-19 | 2001-12-19 | |
PCT/US2002/041103 WO2003054951A1 (en) | 2001-12-19 | 2002-12-19 | Semiconductor device comprising a thin oxide liner and method of manufacturing the same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0412884D0 true GB0412884D0 (en) | 2004-07-14 |
GB2399222A GB2399222A (en) | 2004-09-08 |
GB2399222B GB2399222B (en) | 2005-07-20 |
Family
ID=21801954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0412884A Expired - Lifetime GB2399222B (en) | 2001-12-19 | 2002-12-19 | Semiconductor device comprising a thin oxide liner and method of manufacturing the same |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP2005517285A (en) |
KR (1) | KR20040068269A (en) |
CN (1) | CN1322565C (en) |
AU (1) | AU2002358269A1 (en) |
DE (1) | DE10297582T5 (en) |
GB (1) | GB2399222B (en) |
WO (1) | WO2003054951A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583016B1 (en) * | 2002-03-26 | 2003-06-24 | Advanced Micro Devices, Inc. | Doped spacer liner for improved transistor performance |
JP2008124441A (en) * | 2006-10-19 | 2008-05-29 | Tokyo Electron Ltd | Manufacturing method of semiconductor device |
DE102011005641B4 (en) * | 2011-03-16 | 2018-01-04 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | A method of increasing performance in transistors by reducing subsidence of active regions and by removing spacers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4868617A (en) * | 1988-04-25 | 1989-09-19 | Elite Semiconductor & Sytems International, Inc. | Gate controllable lightly doped drain mosfet devices |
US5714413A (en) * | 1995-12-11 | 1998-02-03 | Intel Corporation | Method of making a transistor having a deposited dual-layer spacer structure |
US6472281B2 (en) * | 1998-02-03 | 2002-10-29 | Matsushita Electronics Corporation | Method for fabricating semiconductor device using a CVD insulator film |
US6162692A (en) * | 1998-06-26 | 2000-12-19 | Advanced Micro Devices, Inc. | Integration of a diffusion barrier layer and a counter dopant region to maintain the dopant level within the junctions of a transistor |
US6251764B1 (en) * | 1999-11-15 | 2001-06-26 | Chartered Semiconductor Manufacturing Ltd. | Method to form an L-shaped silicon nitride sidewall spacer |
US6294480B1 (en) * | 1999-11-19 | 2001-09-25 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an L-shaped spacer with a disposable organic top coating |
US6156598A (en) * | 1999-12-13 | 2000-12-05 | Chartered Semiconductor Manufacturing Ltd. | Method for forming a lightly doped source and drain structure using an L-shaped spacer |
US6277700B1 (en) * | 2000-01-11 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | High selective nitride spacer etch with high ratio of spacer width to deposited nitride thickness |
-
2002
- 2002-12-19 KR KR10-2004-7009490A patent/KR20040068269A/en not_active Application Discontinuation
- 2002-12-19 DE DE10297582T patent/DE10297582T5/en not_active Ceased
- 2002-12-19 GB GB0412884A patent/GB2399222B/en not_active Expired - Lifetime
- 2002-12-19 AU AU2002358269A patent/AU2002358269A1/en not_active Abandoned
- 2002-12-19 JP JP2003555574A patent/JP2005517285A/en active Pending
- 2002-12-19 WO PCT/US2002/041103 patent/WO2003054951A1/en active Application Filing
- 2002-12-19 CN CNB028257502A patent/CN1322565C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2003054951A1 (en) | 2003-07-03 |
GB2399222A (en) | 2004-09-08 |
CN1606801A (en) | 2005-04-13 |
DE10297582T5 (en) | 2004-11-11 |
JP2005517285A (en) | 2005-06-09 |
AU2002358269A1 (en) | 2003-07-09 |
CN1322565C (en) | 2007-06-20 |
GB2399222B (en) | 2005-07-20 |
KR20040068269A (en) | 2004-07-30 |
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