JP2001267533A5 - - Google Patents

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Publication number
JP2001267533A5
JP2001267533A5 JP2000074654A JP2000074654A JP2001267533A5 JP 2001267533 A5 JP2001267533 A5 JP 2001267533A5 JP 2000074654 A JP2000074654 A JP 2000074654A JP 2000074654 A JP2000074654 A JP 2000074654A JP 2001267533 A5 JP2001267533 A5 JP 2001267533A5
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JP
Japan
Prior art keywords
silicon nitride
gate
opening
oxide film
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000074654A
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English (en)
Japanese (ja)
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JP2001267533A (ja
JP4047513B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2000074654A priority Critical patent/JP4047513B2/ja
Priority claimed from JP2000074654A external-priority patent/JP4047513B2/ja
Publication of JP2001267533A publication Critical patent/JP2001267533A/ja
Publication of JP2001267533A5 publication Critical patent/JP2001267533A5/ja
Application granted granted Critical
Publication of JP4047513B2 publication Critical patent/JP4047513B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000074654A 2000-03-16 2000-03-16 半導体集積回路及びその製造方法 Expired - Fee Related JP4047513B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000074654A JP4047513B2 (ja) 2000-03-16 2000-03-16 半導体集積回路及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000074654A JP4047513B2 (ja) 2000-03-16 2000-03-16 半導体集積回路及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001267533A JP2001267533A (ja) 2001-09-28
JP2001267533A5 true JP2001267533A5 (enExample) 2005-04-28
JP4047513B2 JP4047513B2 (ja) 2008-02-13

Family

ID=18592663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000074654A Expired - Fee Related JP4047513B2 (ja) 2000-03-16 2000-03-16 半導体集積回路及びその製造方法

Country Status (1)

Country Link
JP (1) JP4047513B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368775B2 (en) * 2004-07-31 2008-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Single transistor DRAM cell with reduced current leakage and method of manufacture
JP5076570B2 (ja) 2007-03-16 2012-11-21 富士通セミコンダクター株式会社 半導体装置とその製造方法

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