JP2003229577A5 - - Google Patents
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- Publication number
- JP2003229577A5 JP2003229577A5 JP2002028978A JP2002028978A JP2003229577A5 JP 2003229577 A5 JP2003229577 A5 JP 2003229577A5 JP 2002028978 A JP2002028978 A JP 2002028978A JP 2002028978 A JP2002028978 A JP 2002028978A JP 2003229577 A5 JP2003229577 A5 JP 2003229577A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- manufacturing
- region
- etching
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002028978A JP2003229577A (ja) | 2002-02-06 | 2002-02-06 | 半導体装置の製造方法。 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002028978A JP2003229577A (ja) | 2002-02-06 | 2002-02-06 | 半導体装置の製造方法。 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003229577A JP2003229577A (ja) | 2003-08-15 |
| JP2003229577A5 true JP2003229577A5 (enExample) | 2005-07-14 |
Family
ID=27749963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002028978A Pending JP2003229577A (ja) | 2002-02-06 | 2002-02-06 | 半導体装置の製造方法。 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003229577A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911379B2 (en) | 2003-03-05 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming strained silicon on insulator substrate |
| US6949451B2 (en) * | 2003-03-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI chip with recess-resistant buried insulator and method of manufacturing the same |
| US6902962B2 (en) | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
| KR100674987B1 (ko) | 2005-08-09 | 2007-01-29 | 삼성전자주식회사 | 벌크 웨이퍼 기판에 형성된 트랜지스터의 구동 방법 |
| US7550355B2 (en) | 2005-08-29 | 2009-06-23 | Toshiba America Electronic Components, Inc. | Low-leakage transistor and manufacturing method thereof |
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2002
- 2002-02-06 JP JP2002028978A patent/JP2003229577A/ja active Pending