JP2005142319A5 - - Google Patents
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- Publication number
- JP2005142319A5 JP2005142319A5 JP2003376639A JP2003376639A JP2005142319A5 JP 2005142319 A5 JP2005142319 A5 JP 2005142319A5 JP 2003376639 A JP2003376639 A JP 2003376639A JP 2003376639 A JP2003376639 A JP 2003376639A JP 2005142319 A5 JP2005142319 A5 JP 2005142319A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- trench
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 27
- 229910052710 silicon Inorganic materials 0.000 claims 27
- 239000010703 silicon Substances 0.000 claims 27
- 238000004519 manufacturing process Methods 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 8
- 239000011810 insulating material Substances 0.000 claims 7
- 238000010030 laminating Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003376639A JP2005142319A (ja) | 2003-11-06 | 2003-11-06 | 半導体装置の製造方法 |
| KR1020040082084A KR100654871B1 (ko) | 2003-11-06 | 2004-10-14 | 반도체 장치의 제조 방법 |
| TW093132342A TWI250607B (en) | 2003-11-06 | 2004-10-26 | Manufacturing method of semiconductor device |
| US10/978,796 US20050101070A1 (en) | 2003-11-06 | 2004-11-02 | Method of manufacturing semiconductor device |
| CNB2004100905397A CN1311539C (zh) | 2003-11-06 | 2004-11-05 | 半导体装置的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003376639A JP2005142319A (ja) | 2003-11-06 | 2003-11-06 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005142319A JP2005142319A (ja) | 2005-06-02 |
| JP2005142319A5 true JP2005142319A5 (enExample) | 2006-12-14 |
Family
ID=34544369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003376639A Withdrawn JP2005142319A (ja) | 2003-11-06 | 2003-11-06 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050101070A1 (enExample) |
| JP (1) | JP2005142319A (enExample) |
| KR (1) | KR100654871B1 (enExample) |
| CN (1) | CN1311539C (enExample) |
| TW (1) | TWI250607B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5455530B2 (ja) * | 2009-09-30 | 2014-03-26 | 株式会社トクヤマ | ポリシリコン金属汚染防止方法 |
| CN103887223A (zh) * | 2014-03-12 | 2014-06-25 | 上海华力微电子有限公司 | 降低炉管工艺金属污染的方法 |
| JP6246664B2 (ja) | 2014-06-04 | 2017-12-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2016134614A (ja) | 2015-01-22 | 2016-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2021129042A (ja) * | 2020-02-14 | 2021-09-02 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| CN113257734B (zh) * | 2021-04-30 | 2023-06-23 | 北海惠科半导体科技有限公司 | 半导体器件及其制作方法和芯片 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2955459B2 (ja) * | 1993-12-20 | 1999-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH08340044A (ja) * | 1995-06-09 | 1996-12-24 | Rohm Co Ltd | 半導体装置及びその製造方法 |
| US5719085A (en) * | 1995-09-29 | 1998-02-17 | Intel Corporation | Shallow trench isolation technique |
| JP3296229B2 (ja) * | 1997-01-21 | 2002-06-24 | 株式会社デンソー | 半導体装置の製造方法 |
| US5817566A (en) * | 1997-03-03 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration |
| JPH113936A (ja) * | 1997-06-13 | 1999-01-06 | Nec Corp | 半導体装置の製造方法 |
| US5783476A (en) * | 1997-06-26 | 1998-07-21 | Siemens Aktiengesellschaft | Integrated circuit devices including shallow trench isolation |
| KR100268453B1 (ko) * | 1998-03-30 | 2000-11-01 | 윤종용 | 반도체 장치 및 그것의 제조 방법 |
| TW426874B (en) * | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
| JP2000164569A (ja) * | 1998-11-25 | 2000-06-16 | Nec Corp | 半導体装置の製造方法 |
| TW461025B (en) * | 2000-06-09 | 2001-10-21 | Nanya Technology Corp | Method for rounding corner of shallow trench isolation |
| US6627484B1 (en) * | 2000-11-13 | 2003-09-30 | Advanced Micro Devices, Inc. | Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect |
| US6879000B2 (en) * | 2003-03-08 | 2005-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation for SOI chip with multiple silicon film thicknesses |
| US6864152B1 (en) * | 2003-05-20 | 2005-03-08 | Lsi Logic Corporation | Fabrication of trenches with multiple depths on the same substrate |
-
2003
- 2003-11-06 JP JP2003376639A patent/JP2005142319A/ja not_active Withdrawn
-
2004
- 2004-10-14 KR KR1020040082084A patent/KR100654871B1/ko not_active Expired - Fee Related
- 2004-10-26 TW TW093132342A patent/TWI250607B/zh not_active IP Right Cessation
- 2004-11-02 US US10/978,796 patent/US20050101070A1/en not_active Abandoned
- 2004-11-05 CN CNB2004100905397A patent/CN1311539C/zh not_active Expired - Fee Related
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