CN1311539C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN1311539C
CN1311539C CNB2004100905397A CN200410090539A CN1311539C CN 1311539 C CN1311539 C CN 1311539C CN B2004100905397 A CNB2004100905397 A CN B2004100905397A CN 200410090539 A CN200410090539 A CN 200410090539A CN 1311539 C CN1311539 C CN 1311539C
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CN
China
Prior art keywords
film
silicon
trench
semiconductor device
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100905397A
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English (en)
Chinese (zh)
Other versions
CN1614762A (zh
Inventor
辻内干夫
岩松俊明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Publication of CN1614762A publication Critical patent/CN1614762A/zh
Application granted granted Critical
Publication of CN1311539C publication Critical patent/CN1311539C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
CNB2004100905397A 2003-11-06 2004-11-05 半导体装置的制造方法 Expired - Fee Related CN1311539C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP376639/03 2003-11-06
JP376639/2003 2003-11-06
JP2003376639A JP2005142319A (ja) 2003-11-06 2003-11-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1614762A CN1614762A (zh) 2005-05-11
CN1311539C true CN1311539C (zh) 2007-04-18

Family

ID=34544369

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100905397A Expired - Fee Related CN1311539C (zh) 2003-11-06 2004-11-05 半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20050101070A1 (enExample)
JP (1) JP2005142319A (enExample)
KR (1) KR100654871B1 (enExample)
CN (1) CN1311539C (enExample)
TW (1) TWI250607B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5455530B2 (ja) * 2009-09-30 2014-03-26 株式会社トクヤマ ポリシリコン金属汚染防止方法
CN103887223A (zh) * 2014-03-12 2014-06-25 上海华力微电子有限公司 降低炉管工艺金属污染的方法
JP6246664B2 (ja) 2014-06-04 2017-12-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2016134614A (ja) 2015-01-22 2016-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2021129042A (ja) * 2020-02-14 2021-09-02 キオクシア株式会社 半導体装置およびその製造方法
CN113257734B (zh) * 2021-04-30 2023-06-23 北海惠科半导体科技有限公司 半导体器件及其制作方法和芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340044A (ja) * 1995-06-09 1996-12-24 Rohm Co Ltd 半導体装置及びその製造方法
JPH10209446A (ja) * 1997-01-21 1998-08-07 Denso Corp 半導体装置の製造方法
CN1202727A (zh) * 1997-06-13 1998-12-23 日本电气株式会社 制造半导体器件的方法
JP2000164569A (ja) * 1998-11-25 2000-06-16 Nec Corp 半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
US5719085A (en) * 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5817566A (en) * 1997-03-03 1998-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration
US5783476A (en) * 1997-06-26 1998-07-21 Siemens Aktiengesellschaft Integrated circuit devices including shallow trench isolation
KR100268453B1 (ko) * 1998-03-30 2000-11-01 윤종용 반도체 장치 및 그것의 제조 방법
TW426874B (en) * 1998-10-14 2001-03-21 United Microelectronics Corp Method for cleaning a semiconductor wafer
TW461025B (en) * 2000-06-09 2001-10-21 Nanya Technology Corp Method for rounding corner of shallow trench isolation
US6627484B1 (en) * 2000-11-13 2003-09-30 Advanced Micro Devices, Inc. Method of forming a buried interconnect on a semiconductor on insulator wafer and a device including a buried interconnect
US6879000B2 (en) * 2003-03-08 2005-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation for SOI chip with multiple silicon film thicknesses
US6864152B1 (en) * 2003-05-20 2005-03-08 Lsi Logic Corporation Fabrication of trenches with multiple depths on the same substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340044A (ja) * 1995-06-09 1996-12-24 Rohm Co Ltd 半導体装置及びその製造方法
JPH10209446A (ja) * 1997-01-21 1998-08-07 Denso Corp 半導体装置の製造方法
CN1202727A (zh) * 1997-06-13 1998-12-23 日本电气株式会社 制造半导体器件的方法
JP2000164569A (ja) * 1998-11-25 2000-06-16 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20050101070A1 (en) 2005-05-12
JP2005142319A (ja) 2005-06-02
KR100654871B1 (ko) 2006-12-11
CN1614762A (zh) 2005-05-11
TWI250607B (en) 2006-03-01
TW200527587A (en) 2005-08-16
KR20050043622A (ko) 2005-05-11

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Granted publication date: 20070418

Termination date: 20091207