JP2003229577A - 半導体装置の製造方法。 - Google Patents

半導体装置の製造方法。

Info

Publication number
JP2003229577A
JP2003229577A JP2002028978A JP2002028978A JP2003229577A JP 2003229577 A JP2003229577 A JP 2003229577A JP 2002028978 A JP2002028978 A JP 2002028978A JP 2002028978 A JP2002028978 A JP 2002028978A JP 2003229577 A JP2003229577 A JP 2003229577A
Authority
JP
Japan
Prior art keywords
region
oxide film
trench
semiconductor device
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002028978A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229577A5 (enExample
Inventor
Motoaki Nakamura
元昭 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002028978A priority Critical patent/JP2003229577A/ja
Publication of JP2003229577A publication Critical patent/JP2003229577A/ja
Publication of JP2003229577A5 publication Critical patent/JP2003229577A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
JP2002028978A 2002-02-06 2002-02-06 半導体装置の製造方法。 Pending JP2003229577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002028978A JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002028978A JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Publications (2)

Publication Number Publication Date
JP2003229577A true JP2003229577A (ja) 2003-08-15
JP2003229577A5 JP2003229577A5 (enExample) 2005-07-14

Family

ID=27749963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002028978A Pending JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Country Status (1)

Country Link
JP (1) JP2003229577A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US6949451B2 (en) * 2003-03-10 2005-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
KR100674987B1 (ko) 2005-08-09 2007-01-29 삼성전자주식회사 벌크 웨이퍼 기판에 형성된 트랜지스터의 구동 방법
US7368334B2 (en) 2003-04-04 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-on-insulator chip with multiple crystal orientations
US7550355B2 (en) 2005-08-29 2009-06-23 Toshiba America Electronic Components, Inc. Low-leakage transistor and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US6949451B2 (en) * 2003-03-10 2005-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
US7372107B2 (en) 2003-03-10 2008-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
US7368334B2 (en) 2003-04-04 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-on-insulator chip with multiple crystal orientations
US7704809B2 (en) 2003-04-04 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-on-insulator chip with multiple crystal orientations
KR100674987B1 (ko) 2005-08-09 2007-01-29 삼성전자주식회사 벌크 웨이퍼 기판에 형성된 트랜지스터의 구동 방법
US7550355B2 (en) 2005-08-29 2009-06-23 Toshiba America Electronic Components, Inc. Low-leakage transistor and manufacturing method thereof

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