JP2005516380A5 - - Google Patents

Download PDF

Info

Publication number
JP2005516380A5
JP2005516380A5 JP2003522986A JP2003522986A JP2005516380A5 JP 2005516380 A5 JP2005516380 A5 JP 2005516380A5 JP 2003522986 A JP2003522986 A JP 2003522986A JP 2003522986 A JP2003522986 A JP 2003522986A JP 2005516380 A5 JP2005516380 A5 JP 2005516380A5
Authority
JP
Japan
Prior art keywords
layer
modifiable
phase shift
desired pattern
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003522986A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005516380A (ja
JP4262091B2 (ja
Filing date
Publication date
Priority claimed from US09/940,241 external-priority patent/US6653053B2/en
Application filed filed Critical
Publication of JP2005516380A publication Critical patent/JP2005516380A/ja
Publication of JP2005516380A5 publication Critical patent/JP2005516380A5/ja
Application granted granted Critical
Publication of JP4262091B2 publication Critical patent/JP4262091B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003522986A 2001-08-27 2002-08-07 減衰位相シフト反射マスクにより半導体ウェハ上にパターンを形成するための方法 Expired - Fee Related JP4262091B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/940,241 US6653053B2 (en) 2001-08-27 2001-08-27 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
PCT/US2002/025253 WO2003019626A2 (en) 2001-08-27 2002-08-07 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask

Publications (3)

Publication Number Publication Date
JP2005516380A JP2005516380A (ja) 2005-06-02
JP2005516380A5 true JP2005516380A5 (https=) 2006-01-05
JP4262091B2 JP4262091B2 (ja) 2009-05-13

Family

ID=25474472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003522986A Expired - Fee Related JP4262091B2 (ja) 2001-08-27 2002-08-07 減衰位相シフト反射マスクにより半導体ウェハ上にパターンを形成するための方法

Country Status (8)

Country Link
US (1) US6653053B2 (https=)
EP (1) EP1540418A2 (https=)
JP (1) JP4262091B2 (https=)
KR (1) KR20040044508A (https=)
CN (1) CN1636265A (https=)
AU (1) AU2002332489A1 (https=)
TW (1) TW559888B (https=)
WO (1) WO2003019626A2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
US6875546B2 (en) * 2003-03-03 2005-04-05 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using an attenuated phase shift mask
DE10330421A1 (de) 2003-07-04 2005-02-03 Leonhard Kurz Gmbh & Co. Kg Belichtungsstation für Folienbahnen
US7074527B2 (en) * 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
US6986974B2 (en) * 2003-10-16 2006-01-17 Freescale Semiconductor, Inc. Attenuated phase shift mask for extreme ultraviolet lithography and method therefore
FR2863772B1 (fr) * 2003-12-16 2006-05-26 Commissariat Energie Atomique Procede de reparation d'erreurs de motifs realises dans des couches minces
KR100692872B1 (ko) * 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
US7534532B2 (en) * 2005-01-27 2009-05-19 Intel Corporation Method to correct EUVL mask substrate non-flatness
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
JP4839927B2 (ja) * 2006-03-31 2011-12-21 凸版印刷株式会社 極端紫外線露光用マスクブランク及び極端紫外線露光用マスク並びにパターン転写方法
US7758416B2 (en) * 2006-09-08 2010-07-20 Igt Gaming system having a plurality of simultaneously played wagering games that may trigger a plurality of free games which may be played simultaneously with the wagering games
KR101484937B1 (ko) * 2008-07-02 2015-01-21 삼성전자주식회사 위상반전 마스크의 위상 측정 방법 및 이를 수행하기 위한장치
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
JP5507876B2 (ja) 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法
TWI467318B (zh) 2009-12-04 2015-01-01 旭硝子股份有限公司 An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
WO2011071086A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
EP2511945A4 (en) 2009-12-09 2014-09-03 Asahi Glass Co Ltd MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF
JP5707696B2 (ja) * 2009-12-16 2015-04-30 大日本印刷株式会社 反射型マスクの製造方法
JP5515773B2 (ja) * 2010-01-21 2014-06-11 大日本印刷株式会社 遮光枠を有する反射型マスクおよびその製造方法
CN104633502A (zh) * 2015-02-12 2015-05-20 德阳市恒达灯具制造有限公司 配有螺钉固定的led集成模组
US10509310B2 (en) 2015-04-07 2019-12-17 Asml Netherlands B.V. Patterning devices for use within a lithographic apparatus, methods of making and using such patterning devices
CN106169416B (zh) * 2016-08-29 2019-11-12 复旦大学 一种极紫外掩模的制造方法
EP3486721A1 (en) 2017-11-17 2019-05-22 IMEC vzw Mask for extreme-uv lithography and method for manufacturing the same
KR102937232B1 (ko) 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
US12197120B2 (en) * 2019-02-07 2025-01-14 Asml Netherlands B.V. Patterning device and method of use thereof
KR20220122614A (ko) * 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
US11940725B2 (en) 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
US4890309A (en) 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
GB9220941D0 (en) 1992-10-06 1992-11-18 Lynxvale Ltd Partially-fluorinated polymers
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5939227A (en) 1998-03-09 1999-08-17 Rochester Institute Of Technology Multi-layered attenuated phase shift mask and a method for making the mask
US6013399A (en) * 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6235434B1 (en) 1998-12-08 2001-05-22 Euv Llc Method for mask repair using defect compensation
US6277526B1 (en) * 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
US6261723B1 (en) * 1999-03-04 2001-07-17 International Business Machines Corporation Transfer layer repair process for attenuated masks
US6207333B1 (en) * 1999-07-29 2001-03-27 International Business Machines Corporation Mask with attenuating phase-shift and opaque regions
US6551750B2 (en) * 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching

Similar Documents

Publication Publication Date Title
JP2005516380A5 (https=)
JP2001230186A5 (https=)
JP2003059805A5 (https=)
CN109585277B (zh) 形成开口于下方层中的方法
TWI414001B (zh) 用於對材料層進行圖案化之方法
JP2002202585A5 (https=)
US20030186547A1 (en) Method for forming fine patterns in semiconductor device
TWI324791B (https=)
TW201417143A (zh) 極紫外光光阻敏感性降低
KR100498716B1 (ko) 미세 패턴 형성방법
JP2001201844A5 (https=)
TW200535991A (en) Composite layer method for minimizing ped effect
JP2580681B2 (ja) 半導体装置の製造方法
KR100399889B1 (ko) 반도체소자의감광층패턴형성방법
TWI244121B (en) Chemical shrink process applied in the method of manufacturing micro-nanometer circuit
JP2713061B2 (ja) レジストパターンの形成方法
KR100323443B1 (ko) 반도체소자의제조방법
KR100358161B1 (ko) 반도체소자제조방법
JPH02103551A (ja) フォトレジストパターンの形成方法
CN119781260A (zh) 利用不同照明模式获得高分辨图形的方法
TW200538883A (en) Reticle film stabilizing method
CN113759664A (zh) 一种适用于半导体分立器件的光刻方法
KR20060017974A (ko) 반도체소자의 게이트 형성방법
JPH04180615A (ja) 半導体装置の製造方法
JPH03104113A (ja) レジストパターンの形成方法