KR20040044508A - 감쇠된 위상 시프팅 반사 마스크를 사용하여 반도체웨이퍼상에 패턴을 형성하기 위한 방법 - Google Patents

감쇠된 위상 시프팅 반사 마스크를 사용하여 반도체웨이퍼상에 패턴을 형성하기 위한 방법 Download PDF

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Publication number
KR20040044508A
KR20040044508A KR10-2004-7002984A KR20047002984A KR20040044508A KR 20040044508 A KR20040044508 A KR 20040044508A KR 20047002984 A KR20047002984 A KR 20047002984A KR 20040044508 A KR20040044508 A KR 20040044508A
Authority
KR
South Korea
Prior art keywords
layer
modifiable
mask
phase shift
desired pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2004-7002984A
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English (en)
Korean (ko)
Inventor
맨가트패위터
한상인
Original Assignee
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 모토로라 인코포레이티드 filed Critical 모토로라 인코포레이티드
Publication of KR20040044508A publication Critical patent/KR20040044508A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR10-2004-7002984A 2001-08-27 2002-08-07 감쇠된 위상 시프팅 반사 마스크를 사용하여 반도체웨이퍼상에 패턴을 형성하기 위한 방법 Withdrawn KR20040044508A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/940,241 US6653053B2 (en) 2001-08-27 2001-08-27 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
US09/940,241 2001-08-27
PCT/US2002/025253 WO2003019626A2 (en) 2001-08-27 2002-08-07 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask

Publications (1)

Publication Number Publication Date
KR20040044508A true KR20040044508A (ko) 2004-05-28

Family

ID=25474472

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7002984A Withdrawn KR20040044508A (ko) 2001-08-27 2002-08-07 감쇠된 위상 시프팅 반사 마스크를 사용하여 반도체웨이퍼상에 패턴을 형성하기 위한 방법

Country Status (8)

Country Link
US (1) US6653053B2 (https=)
EP (1) EP1540418A2 (https=)
JP (1) JP4262091B2 (https=)
KR (1) KR20040044508A (https=)
CN (1) CN1636265A (https=)
AU (1) AU2002332489A1 (https=)
TW (1) TW559888B (https=)
WO (1) WO2003019626A2 (https=)

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US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
US6875546B2 (en) * 2003-03-03 2005-04-05 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using an attenuated phase shift mask
DE10330421A1 (de) 2003-07-04 2005-02-03 Leonhard Kurz Gmbh & Co. Kg Belichtungsstation für Folienbahnen
US7074527B2 (en) * 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
US6986974B2 (en) * 2003-10-16 2006-01-17 Freescale Semiconductor, Inc. Attenuated phase shift mask for extreme ultraviolet lithography and method therefore
FR2863772B1 (fr) * 2003-12-16 2006-05-26 Commissariat Energie Atomique Procede de reparation d'erreurs de motifs realises dans des couches minces
KR100692872B1 (ko) * 2004-02-04 2007-03-12 엘지전자 주식회사 마스크 및 그 제조방법과 그를 이용한 유기 전계 발광소자의 제조방법
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
US7534532B2 (en) * 2005-01-27 2009-05-19 Intel Corporation Method to correct EUVL mask substrate non-flatness
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
JP4839927B2 (ja) * 2006-03-31 2011-12-21 凸版印刷株式会社 極端紫外線露光用マスクブランク及び極端紫外線露光用マスク並びにパターン転写方法
US7758416B2 (en) * 2006-09-08 2010-07-20 Igt Gaming system having a plurality of simultaneously played wagering games that may trigger a plurality of free games which may be played simultaneously with the wagering games
KR101484937B1 (ko) * 2008-07-02 2015-01-21 삼성전자주식회사 위상반전 마스크의 위상 측정 방법 및 이를 수행하기 위한장치
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
JP5507876B2 (ja) 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法
TWI467318B (zh) 2009-12-04 2015-01-01 旭硝子股份有限公司 An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
WO2011071086A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
EP2511945A4 (en) 2009-12-09 2014-09-03 Asahi Glass Co Ltd MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF
JP5707696B2 (ja) * 2009-12-16 2015-04-30 大日本印刷株式会社 反射型マスクの製造方法
JP5515773B2 (ja) * 2010-01-21 2014-06-11 大日本印刷株式会社 遮光枠を有する反射型マスクおよびその製造方法
CN104633502A (zh) * 2015-02-12 2015-05-20 德阳市恒达灯具制造有限公司 配有螺钉固定的led集成模组
US10509310B2 (en) 2015-04-07 2019-12-17 Asml Netherlands B.V. Patterning devices for use within a lithographic apparatus, methods of making and using such patterning devices
CN106169416B (zh) * 2016-08-29 2019-11-12 复旦大学 一种极紫外掩模的制造方法
EP3486721A1 (en) 2017-11-17 2019-05-22 IMEC vzw Mask for extreme-uv lithography and method for manufacturing the same
KR102937232B1 (ko) 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
US12197120B2 (en) * 2019-02-07 2025-01-14 Asml Netherlands B.V. Patterning device and method of use thereof
KR20220122614A (ko) * 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
US11940725B2 (en) 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography

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DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
US4890309A (en) 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
GB9220941D0 (en) 1992-10-06 1992-11-18 Lynxvale Ltd Partially-fluorinated polymers
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5939227A (en) 1998-03-09 1999-08-17 Rochester Institute Of Technology Multi-layered attenuated phase shift mask and a method for making the mask
US6013399A (en) * 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6235434B1 (en) 1998-12-08 2001-05-22 Euv Llc Method for mask repair using defect compensation
US6277526B1 (en) * 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
US6261723B1 (en) * 1999-03-04 2001-07-17 International Business Machines Corporation Transfer layer repair process for attenuated masks
US6207333B1 (en) * 1999-07-29 2001-03-27 International Business Machines Corporation Mask with attenuating phase-shift and opaque regions
US6551750B2 (en) * 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching

Also Published As

Publication number Publication date
EP1540418A2 (en) 2005-06-15
WO2003019626A3 (en) 2005-03-17
TW559888B (en) 2003-11-01
WO2003019626A2 (en) 2003-03-06
JP2005516380A (ja) 2005-06-02
CN1636265A (zh) 2005-07-06
AU2002332489A1 (en) 2003-03-10
US20030039923A1 (en) 2003-02-27
JP4262091B2 (ja) 2009-05-13
WO2003019626A9 (en) 2004-11-04
US6653053B2 (en) 2003-11-25

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