JP4478568B2 - 改良されたレチクルの製造のためにアモルファスカーボン層を使用する方法 - Google Patents
改良されたレチクルの製造のためにアモルファスカーボン層を使用する方法 Download PDFInfo
- Publication number
- JP4478568B2 JP4478568B2 JP2004519646A JP2004519646A JP4478568B2 JP 4478568 B2 JP4478568 B2 JP 4478568B2 JP 2004519646 A JP2004519646 A JP 2004519646A JP 2004519646 A JP2004519646 A JP 2004519646A JP 4478568 B2 JP4478568 B2 JP 4478568B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous carbon
- reticle
- etching
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (10)
- 改良されたレチクルの製造のためにアモルファスカーボン層(130)を使用する方法であって、
基板(110)、吸収材(120)、転写層(130)、反射防止コーティング(ARC)層(140)、およびフォトレジスト層(150)を含む積層を堆積(15、25、35)し、
前記フォトレジスト層(150)をパターニング(45)し、
前記ARC層(140)および前記転写層(130)をエッチング(55、65)し、
前記吸収層(120)をエッチングし(75)し、
アモルファスカーボンを含む前記転写層(130)を除去(85)する方法。 - 前記ARC層(140)および前記転写層(130)のエッチング(55、65)では、前記フォトレジスト層(150)が除去される、請求項1記載の方法。
- 前記吸収層(120)のエッチング(75)では、前記ARC層(140)が除去される、請求項1記載の方法。
- アモルファスカーボンを含む前記転写層(130)の除去(85)では、O2プラズマアッシングがなされる、請求項1記載の方法。
- 前記転写層(130)の厚みが5〜200nmである、請求項1記載の方法。
- レチクルの製造方法であって、
SiON層(140)およびアモルファスカーボン層(130)の上方に位置するフォトレジスト層(150)をパターニング(45)し、
前記パターニングされたフォトレジスト層(150)をマスクとして用いて、前記SiON層(140)および前記アモルファスカーボン層(130)をエッチング(55、65)して、前記アモルファスカーボン層(130)の下方に配置された金属含有層(120)を露出させ、
前記アモルファスカーボン層(130)をマスクとして用いて、前記金属含有層(120)をエッチング(75)し、
前記アモルファスカーボン層(130)を除去(85)する、方法。 - 前記パターニングされたフォトレジスト層(150)をマスクとして用いた前記SiON層(140)および前記アモルファスカーボン層(130)のエッチング(55、65)と前記アモルファスカーボン層(130)の下方に配置された金属含有層(120)の露出では、前記アモルファスカーボン層(130)のエッチング(75)中に前記フォトレジスト層(150)が除去される、請求項6記載の方法。
- 前記フォトレジスト層(150)の厚みが、400nmである、請求項6記載の方法。
- 前記アモルファスカーボン層(130)の厚みが、約30nm〜100nmである、請求項6記載の方法。
- 前記アモルファスカーボン層(130)をマスクとして用いての前記金属含有層(120)のエッチング(75)では、前記SiON層(140)が除去される、請求項6記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/190,138 US20040079726A1 (en) | 2002-07-03 | 2002-07-03 | Method of using an amorphous carbon layer for improved reticle fabrication |
PCT/US2003/020113 WO2004006014A2 (en) | 2002-07-03 | 2003-06-25 | Method of using an amorphous carbon layer for improved reticle fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005531819A JP2005531819A (ja) | 2005-10-20 |
JP4478568B2 true JP4478568B2 (ja) | 2010-06-09 |
Family
ID=30114046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004519646A Expired - Lifetime JP4478568B2 (ja) | 2002-07-03 | 2003-06-25 | 改良されたレチクルの製造のためにアモルファスカーボン層を使用する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040079726A1 (ja) |
EP (1) | EP1518150B1 (ja) |
JP (1) | JP4478568B2 (ja) |
CN (1) | CN1304904C (ja) |
AU (1) | AU2003281424A1 (ja) |
DE (1) | DE60304335T2 (ja) |
TW (1) | TW200401376A (ja) |
WO (1) | WO2004006014A2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855627B1 (en) * | 2002-12-04 | 2005-02-15 | Advanced Micro Devices, Inc. | Method of using amorphous carbon to prevent resist poisoning |
US7078351B2 (en) * | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
KR100704470B1 (ko) * | 2004-07-29 | 2007-04-10 | 주식회사 하이닉스반도체 | 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법 |
TWI375114B (en) | 2004-10-22 | 2012-10-21 | Shinetsu Chemical Co | Photomask-blank, photomask and fabrication method thereof |
KR100618907B1 (ko) * | 2005-07-30 | 2006-09-01 | 삼성전자주식회사 | 다중 반사 방지층을 포함한 반도체 구조물 및 그 구조물을이용한 pr 패턴 형성 방법 및 반도체 소자의 패턴 형성방법 |
US7375038B2 (en) | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
KR100780944B1 (ko) * | 2005-10-12 | 2007-12-03 | 삼성전자주식회사 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
KR100932315B1 (ko) * | 2007-02-09 | 2009-12-16 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
US7553770B2 (en) * | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
US20090053620A1 (en) * | 2007-08-24 | 2009-02-26 | Hynix Semiconductor Inc. | Blank Mask and Method for Fabricating Photomask Using the Same |
TWI409580B (zh) * | 2008-06-27 | 2013-09-21 | S&S Tech Co Ltd | 空白光罩、光罩及其製造方法 |
US9305835B2 (en) * | 2014-02-26 | 2016-04-05 | International Business Machines Corporation | Formation of air-gap spacer in transistor |
KR102401580B1 (ko) | 2015-06-04 | 2022-05-24 | 삼성전자주식회사 | 펠리클 조립체의 제조 방법 및 펠리클 조립체를 포함하는 포토마스크 조립체의 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4704342A (en) * | 1985-04-02 | 1987-11-03 | Fairchild Semiconductor Corporation | Photomask having a patterned carbon light-blocking coating |
JPS62217245A (ja) * | 1986-03-19 | 1987-09-24 | Fujitsu Ltd | 低反射フオトマスク |
US5759746A (en) * | 1996-05-24 | 1998-06-02 | Kabushiki Kaisha Toshiba | Fabrication process using a thin resist |
JP3177968B2 (ja) * | 1998-12-04 | 2001-06-18 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6030541A (en) * | 1998-06-19 | 2000-02-29 | International Business Machines Corporation | Process for defining a pattern using an anti-reflective coating and structure therefor |
US6127263A (en) * | 1998-07-10 | 2000-10-03 | Applied Materials, Inc. | Misalignment tolerant techniques for dual damascene fabrication |
KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
KR100304708B1 (ko) * | 1999-07-14 | 2001-11-01 | 윤종용 | 이중층 반사방지막을 갖는 반도체소자 및 그 제조방법 |
JP2001056555A (ja) * | 1999-08-20 | 2001-02-27 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物及びそれを用いた感光材料 |
TW428248B (en) * | 1999-09-30 | 2001-04-01 | Taiwan Semiconductor Mfg | Structure and method of metal conductive layer and dielectric layer |
US6210843B1 (en) * | 1999-11-22 | 2001-04-03 | Intel Corporation | Modulation of peripheral critical dimension on photomask with differential electron beam dose |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6583047B2 (en) * | 2000-12-26 | 2003-06-24 | Honeywell International, Inc. | Method for eliminating reaction between photoresist and OSG |
US6812134B1 (en) * | 2001-06-28 | 2004-11-02 | Lsi Logic Corporation | Dual layer barrier film techniques to prevent resist poisoning |
US6811959B2 (en) * | 2002-03-04 | 2004-11-02 | International Business Machines Corporation | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks |
US6774033B1 (en) * | 2002-11-04 | 2004-08-10 | Cypress Semiconductor Corporation | Metal stack for local interconnect layer |
-
2002
- 2002-07-03 US US10/190,138 patent/US20040079726A1/en not_active Abandoned
-
2003
- 2003-06-25 EP EP03742217A patent/EP1518150B1/en not_active Expired - Lifetime
- 2003-06-25 JP JP2004519646A patent/JP4478568B2/ja not_active Expired - Lifetime
- 2003-06-25 DE DE60304335T patent/DE60304335T2/de not_active Expired - Lifetime
- 2003-06-25 WO PCT/US2003/020113 patent/WO2004006014A2/en active IP Right Grant
- 2003-06-25 CN CNB038158183A patent/CN1304904C/zh not_active Expired - Fee Related
- 2003-06-25 AU AU2003281424A patent/AU2003281424A1/en not_active Abandoned
- 2003-07-01 TW TW092117923A patent/TW200401376A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1518150B1 (en) | 2006-03-29 |
AU2003281424A8 (en) | 2004-01-23 |
CN1304904C (zh) | 2007-03-14 |
JP2005531819A (ja) | 2005-10-20 |
DE60304335D1 (de) | 2006-05-18 |
WO2004006014A2 (en) | 2004-01-15 |
EP1518150A2 (en) | 2005-03-30 |
CN1666147A (zh) | 2005-09-07 |
AU2003281424A1 (en) | 2004-01-23 |
US20040079726A1 (en) | 2004-04-29 |
TW200401376A (en) | 2004-01-16 |
WO2004006014A3 (en) | 2004-06-10 |
DE60304335T2 (de) | 2006-12-07 |
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