CN1666147A - 使用无定形碳层改善光栅制造的方法 - Google Patents
使用无定形碳层改善光栅制造的方法 Download PDFInfo
- Publication number
- CN1666147A CN1666147A CN03815818.3A CN03815818A CN1666147A CN 1666147 A CN1666147 A CN 1666147A CN 03815818 A CN03815818 A CN 03815818A CN 1666147 A CN1666147 A CN 1666147A
- Authority
- CN
- China
- Prior art keywords
- layer
- etching
- amorphous carbon
- photoresist
- grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 40
- 238000012546 transfer Methods 0.000 claims abstract description 32
- 238000000059 patterning Methods 0.000 claims abstract description 25
- 239000006096 absorbing agent Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000006117 anti-reflective coating Substances 0.000 abstract description 28
- 239000000463 material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- REAOZOPEJGPVCB-UHFFFAOYSA-N dioxygen difluoride Chemical compound FOOF REAOZOPEJGPVCB-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010458 rotten stone Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/190,138 | 2002-07-03 | ||
US10/190,138 US20040079726A1 (en) | 2002-07-03 | 2002-07-03 | Method of using an amorphous carbon layer for improved reticle fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1666147A true CN1666147A (zh) | 2005-09-07 |
CN1304904C CN1304904C (zh) | 2007-03-14 |
Family
ID=30114046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038158183A Expired - Fee Related CN1304904C (zh) | 2002-07-03 | 2003-06-25 | 使用无定形碳层改善光栅制造的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040079726A1 (zh) |
EP (1) | EP1518150B1 (zh) |
JP (1) | JP4478568B2 (zh) |
CN (1) | CN1304904C (zh) |
AU (1) | AU2003281424A1 (zh) |
DE (1) | DE60304335T2 (zh) |
TW (1) | TW200401376A (zh) |
WO (1) | WO2004006014A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113126441A (zh) * | 2021-03-29 | 2021-07-16 | 上海华力集成电路制造有限公司 | 一种改善光刻前层薄膜吸附水导致光刻缺陷的优化方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855627B1 (en) * | 2002-12-04 | 2005-02-15 | Advanced Micro Devices, Inc. | Method of using amorphous carbon to prevent resist poisoning |
US7078351B2 (en) * | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
KR100704470B1 (ko) * | 2004-07-29 | 2007-04-10 | 주식회사 하이닉스반도체 | 비결정성 탄소막을 희생 하드마스크로 이용하는반도체소자 제조 방법 |
TWI375114B (en) | 2004-10-22 | 2012-10-21 | Shinetsu Chemical Co | Photomask-blank, photomask and fabrication method thereof |
KR100618907B1 (ko) * | 2005-07-30 | 2006-09-01 | 삼성전자주식회사 | 다중 반사 방지층을 포함한 반도체 구조물 및 그 구조물을이용한 pr 패턴 형성 방법 및 반도체 소자의 패턴 형성방법 |
US7375038B2 (en) * | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
KR100780944B1 (ko) * | 2005-10-12 | 2007-12-03 | 삼성전자주식회사 | 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법 |
KR100932315B1 (ko) * | 2007-02-09 | 2009-12-16 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
US7553770B2 (en) * | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
US20090053620A1 (en) * | 2007-08-24 | 2009-02-26 | Hynix Semiconductor Inc. | Blank Mask and Method for Fabricating Photomask Using the Same |
TWI409580B (zh) * | 2008-06-27 | 2013-09-21 | S&S Tech Co Ltd | 空白光罩、光罩及其製造方法 |
US9305835B2 (en) * | 2014-02-26 | 2016-04-05 | International Business Machines Corporation | Formation of air-gap spacer in transistor |
KR102401580B1 (ko) | 2015-06-04 | 2022-05-24 | 삼성전자주식회사 | 펠리클 조립체의 제조 방법 및 펠리클 조립체를 포함하는 포토마스크 조립체의 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4704342A (en) * | 1985-04-02 | 1987-11-03 | Fairchild Semiconductor Corporation | Photomask having a patterned carbon light-blocking coating |
JPS62217245A (ja) * | 1986-03-19 | 1987-09-24 | Fujitsu Ltd | 低反射フオトマスク |
US5759746A (en) * | 1996-05-24 | 1998-06-02 | Kabushiki Kaisha Toshiba | Fabrication process using a thin resist |
JP3177968B2 (ja) * | 1998-12-04 | 2001-06-18 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6030541A (en) * | 1998-06-19 | 2000-02-29 | International Business Machines Corporation | Process for defining a pattern using an anti-reflective coating and structure therefor |
US6127263A (en) * | 1998-07-10 | 2000-10-03 | Applied Materials, Inc. | Misalignment tolerant techniques for dual damascene fabrication |
KR100307629B1 (ko) * | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
KR100304708B1 (ko) * | 1999-07-14 | 2001-11-01 | 윤종용 | 이중층 반사방지막을 갖는 반도체소자 및 그 제조방법 |
JP2001056555A (ja) * | 1999-08-20 | 2001-02-27 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物及びそれを用いた感光材料 |
TW428248B (en) * | 1999-09-30 | 2001-04-01 | Taiwan Semiconductor Mfg | Structure and method of metal conductive layer and dielectric layer |
US6210843B1 (en) * | 1999-11-22 | 2001-04-03 | Intel Corporation | Modulation of peripheral critical dimension on photomask with differential electron beam dose |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6583047B2 (en) * | 2000-12-26 | 2003-06-24 | Honeywell International, Inc. | Method for eliminating reaction between photoresist and OSG |
US6812134B1 (en) * | 2001-06-28 | 2004-11-02 | Lsi Logic Corporation | Dual layer barrier film techniques to prevent resist poisoning |
US6811959B2 (en) * | 2002-03-04 | 2004-11-02 | International Business Machines Corporation | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks |
US6774033B1 (en) * | 2002-11-04 | 2004-08-10 | Cypress Semiconductor Corporation | Metal stack for local interconnect layer |
-
2002
- 2002-07-03 US US10/190,138 patent/US20040079726A1/en not_active Abandoned
-
2003
- 2003-06-25 CN CNB038158183A patent/CN1304904C/zh not_active Expired - Fee Related
- 2003-06-25 EP EP03742217A patent/EP1518150B1/en not_active Expired - Lifetime
- 2003-06-25 AU AU2003281424A patent/AU2003281424A1/en not_active Abandoned
- 2003-06-25 JP JP2004519646A patent/JP4478568B2/ja not_active Expired - Lifetime
- 2003-06-25 WO PCT/US2003/020113 patent/WO2004006014A2/en active IP Right Grant
- 2003-06-25 DE DE60304335T patent/DE60304335T2/de not_active Expired - Lifetime
- 2003-07-01 TW TW092117923A patent/TW200401376A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113126441A (zh) * | 2021-03-29 | 2021-07-16 | 上海华力集成电路制造有限公司 | 一种改善光刻前层薄膜吸附水导致光刻缺陷的优化方法 |
CN113126441B (zh) * | 2021-03-29 | 2024-06-07 | 上海华力集成电路制造有限公司 | 一种改善光刻前层薄膜吸附水导致光刻缺陷的优化方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1518150B1 (en) | 2006-03-29 |
AU2003281424A1 (en) | 2004-01-23 |
CN1304904C (zh) | 2007-03-14 |
EP1518150A2 (en) | 2005-03-30 |
TW200401376A (en) | 2004-01-16 |
WO2004006014A3 (en) | 2004-06-10 |
DE60304335T2 (de) | 2006-12-07 |
JP4478568B2 (ja) | 2010-06-09 |
WO2004006014A2 (en) | 2004-01-15 |
DE60304335D1 (de) | 2006-05-18 |
JP2005531819A (ja) | 2005-10-20 |
US20040079726A1 (en) | 2004-04-29 |
AU2003281424A8 (en) | 2004-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES SEMICONDUCTORS CO., LTD Free format text: FORMER OWNER: ADVANCED MICRO DEVICES CORPORATION Effective date: 20100721 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, THE USA TO: GRAND CAYMAN ISLAND, BRITISH CAYMAN ISLANDS |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100721 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070314 Termination date: 20110625 |