JP2005340625A - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP2005340625A
JP2005340625A JP2004159463A JP2004159463A JP2005340625A JP 2005340625 A JP2005340625 A JP 2005340625A JP 2004159463 A JP2004159463 A JP 2004159463A JP 2004159463 A JP2004159463 A JP 2004159463A JP 2005340625 A JP2005340625 A JP 2005340625A
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film
layer
nitride semiconductor
light
semiconductor laser
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Japanese (ja)
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JP2005340625A5 (enExample
Inventor
Yasushi Fujimura
康史 藤村
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Publication of JP2005340625A5 publication Critical patent/JP2005340625A5/ja
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JP2004159463A 2004-05-28 2004-05-28 窒化物半導体レーザ素子 Pending JP2005340625A (ja)

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JP2004159463A JP2005340625A (ja) 2004-05-28 2004-05-28 窒化物半導体レーザ素子

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JP2005340625A5 JP2005340625A5 (enExample) 2007-07-12

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189207A (ja) * 2005-12-16 2007-07-26 Sharp Corp 窒化物半導体発光素子および窒化物半導体レーザ素子の製造方法
JP2007273951A (ja) * 2006-03-06 2007-10-18 Sharp Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法および窒化物半導体トランジスタ素子
JP2007281476A (ja) * 2006-04-05 2007-10-25 Samsung Electro Mech Co Ltd ＧａＮ系半導体発光素子及びその製造方法
WO2008093703A1 (ja) * 2007-01-30 2008-08-07 Nec Corporation 半導体レーザ
JP2008186837A (ja) * 2007-01-26 2008-08-14 Sharp Corp 半導体レーザ素子
US7577173B2 (en) 2007-02-26 2009-08-18 Mitsubishi Electric Corporation Semiconductor laser device having a low reflection film of stable reflectance
KR100945993B1 (ko) 2008-03-06 2010-03-09 삼성전기주식회사 반도체 레이저 다이오드
US7750363B2 (en) 2005-10-07 2010-07-06 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device having an end face coating film and method of manufacturing the same
US7792169B2 (en) 2006-03-08 2010-09-07 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
US7970035B2 (en) 2008-03-19 2011-06-28 Sharp Kabushiki Kaisha Nitride semiconductor laser element and external-cavity semiconductor laser device
JP2012209576A (ja) * 2005-12-16 2012-10-25 Sharp Corp 窒化物半導体発光素子
JP2012231189A (ja) * 2007-06-13 2012-11-22 Sharp Corp 発光素子及び発光素子の製造方法
US8319235B2 (en) 2006-04-24 2012-11-27 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device
US8368095B2 (en) 2005-12-16 2013-02-05 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
US8368098B2 (en) 2007-06-05 2013-02-05 Sharp Kabushiki Kaisha Light emitting device and manufacturing method thereof
US8541796B2 (en) 2005-12-16 2013-09-24 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
WO2013172070A1 (ja) * 2012-05-18 2013-11-21 住友電気工業株式会社 Iii族窒化物半導体レーザ素子
JP2016224476A (ja) * 2013-12-20 2016-12-28 シャープ株式会社 光源

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283483A (ja) * 1994-04-15 1995-10-27 Hitachi Ltd 半導体レーザ素子の製造方法
JPH09283843A (ja) * 1996-04-17 1997-10-31 Hitachi Ltd 半導体レーザ
JPH11312841A (ja) * 1998-04-28 1999-11-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000022269A (ja) * 1998-07-02 2000-01-21 Nec Corp 青色半導体レーザ素子
JP2000196143A (ja) * 1998-12-25 2000-07-14 Sharp Corp 半導体発光素子
JP2001144378A (ja) * 1999-08-31 2001-05-25 Sharp Corp 化合物半導体発光素子及びその製造方法
JP2001210913A (ja) * 1999-11-17 2001-08-03 Nichia Chem Ind Ltd レーザ素子の製造方法
JP2001223429A (ja) * 2000-02-09 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2002016312A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2002043692A (ja) * 2000-05-17 2002-02-08 Sony Corp 半導体レーザおよびその製造方法
JP2002164617A (ja) * 2000-09-18 2002-06-07 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2002208724A (ja) * 2001-01-09 2002-07-26 Osaka Gas Co Ltd 半導体素子およびその製造方法
JP2002246679A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体レーザ素子およびその製造方法
JP2002305348A (ja) * 1999-11-30 2002-10-18 Matsushita Electric Ind Co Ltd 半導体レーザ素子
JP2003124561A (ja) * 2001-10-11 2003-04-25 Sony Corp 光学被膜、光学被膜の成膜方法、半導体レーザ素子及びｓｈｇデバイス
JP2003142780A (ja) * 1996-01-25 2003-05-16 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2003258382A (ja) * 2002-03-01 2003-09-12 Sharp Corp ＧａＮ系レーザ素子
JP2004140203A (ja) * 2002-10-18 2004-05-13 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JP2004158800A (ja) * 2002-11-08 2004-06-03 Sharp Corp 窒化物半導体レーザ素子および光学式情報記録再生装置

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283483A (ja) * 1994-04-15 1995-10-27 Hitachi Ltd 半導体レーザ素子の製造方法
JP2003142780A (ja) * 1996-01-25 2003-05-16 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPH09283843A (ja) * 1996-04-17 1997-10-31 Hitachi Ltd 半導体レーザ
JPH11312841A (ja) * 1998-04-28 1999-11-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2000022269A (ja) * 1998-07-02 2000-01-21 Nec Corp 青色半導体レーザ素子
JP2000196143A (ja) * 1998-12-25 2000-07-14 Sharp Corp 半導体発光素子
JP2001144378A (ja) * 1999-08-31 2001-05-25 Sharp Corp 化合物半導体発光素子及びその製造方法
JP2001210913A (ja) * 1999-11-17 2001-08-03 Nichia Chem Ind Ltd レーザ素子の製造方法
JP2002305348A (ja) * 1999-11-30 2002-10-18 Matsushita Electric Ind Co Ltd 半導体レーザ素子
JP2001223429A (ja) * 2000-02-09 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2002043692A (ja) * 2000-05-17 2002-02-08 Sony Corp 半導体レーザおよびその製造方法
JP2002016312A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2002164617A (ja) * 2000-09-18 2002-06-07 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2002208724A (ja) * 2001-01-09 2002-07-26 Osaka Gas Co Ltd 半導体素子およびその製造方法
JP2002246679A (ja) * 2001-02-14 2002-08-30 Sony Corp 半導体レーザ素子およびその製造方法
JP2003124561A (ja) * 2001-10-11 2003-04-25 Sony Corp 光学被膜、光学被膜の成膜方法、半導体レーザ素子及びｓｈｇデバイス
JP2003258382A (ja) * 2002-03-01 2003-09-12 Sharp Corp ＧａＮ系レーザ素子
JP2004140203A (ja) * 2002-10-18 2004-05-13 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JP2004158800A (ja) * 2002-11-08 2004-06-03 Sharp Corp 窒化物半導体レーザ素子および光学式情報記録再生装置

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750363B2 (en) 2005-10-07 2010-07-06 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device having an end face coating film and method of manufacturing the same
US8368095B2 (en) 2005-12-16 2013-02-05 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
JP2012209576A (ja) * 2005-12-16 2012-10-25 Sharp Corp 窒化物半導体発光素子
US8735192B2 (en) 2005-12-16 2014-05-27 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
JP2007189207A (ja) * 2005-12-16 2007-07-26 Sharp Corp 窒化物半導体発光素子および窒化物半導体レーザ素子の製造方法
US8541796B2 (en) 2005-12-16 2013-09-24 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
US7968898B2 (en) 2006-03-06 2011-06-28 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
JP2007273951A (ja) * 2006-03-06 2007-10-18 Sharp Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法および窒化物半導体トランジスタ素子
US8067255B2 (en) 2006-03-06 2011-11-29 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
US8367441B2 (en) 2006-03-06 2013-02-05 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
US9660413B2 (en) 2006-03-08 2017-05-23 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
US7792169B2 (en) 2006-03-08 2010-09-07 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
US9190806B2 (en) 2006-03-08 2015-11-17 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
JP2007281476A (ja) * 2006-04-05 2007-10-25 Samsung Electro Mech Co Ltd ＧａＮ系半導体発光素子及びその製造方法
US8319235B2 (en) 2006-04-24 2012-11-27 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device
US7633983B2 (en) 2006-12-14 2009-12-15 Sharp Kabushiki Kaisha Semiconductor laser device
JP2008186837A (ja) * 2007-01-26 2008-08-14 Sharp Corp 半導体レーザ素子
WO2008093703A1 (ja) * 2007-01-30 2008-08-07 Nec Corporation 半導体レーザ
US7577173B2 (en) 2007-02-26 2009-08-18 Mitsubishi Electric Corporation Semiconductor laser device having a low reflection film of stable reflectance
US8368098B2 (en) 2007-06-05 2013-02-05 Sharp Kabushiki Kaisha Light emitting device and manufacturing method thereof
JP2012231189A (ja) * 2007-06-13 2012-11-22 Sharp Corp 発光素子及び発光素子の製造方法
KR100945993B1 (ko) 2008-03-06 2010-03-09 삼성전기주식회사 반도체 레이저 다이오드
US7970035B2 (en) 2008-03-19 2011-06-28 Sharp Kabushiki Kaisha Nitride semiconductor laser element and external-cavity semiconductor laser device
WO2013172070A1 (ja) * 2012-05-18 2013-11-21 住友電気工業株式会社 Iii族窒化物半導体レーザ素子
US8908732B2 (en) 2012-05-18 2014-12-09 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device
JP2016224476A (ja) * 2013-12-20 2016-12-28 シャープ株式会社 光源

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